改进的E-ICP(增强电感耦合等离子体)刻蚀技术

Jae-Seong Jeong, O. Beom-hoan, Se-Guen Park
{"title":"改进的E-ICP(增强电感耦合等离子体)刻蚀技术","authors":"Jae-Seong Jeong, O. Beom-hoan, Se-Guen Park","doi":"10.1109/ICVC.1999.820958","DOIUrl":null,"url":null,"abstract":"A novel technique, named as \"Enhanced-ICP\", for a better etch process, has been proposed. Here, we report an improved result of the E-ICP. A photo-resist etch uniformity of below 1% within 10 cm in diameter has been accomplished with improved plasma density and the low electron temperature of 1 eV.","PeriodicalId":13415,"journal":{"name":"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)","volume":"273 1","pages":"441-443"},"PeriodicalIF":0.0000,"publicationDate":"1999-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Improved etching technique of E-ICP (Enhanced Inductively Coupled Plasma)\",\"authors\":\"Jae-Seong Jeong, O. Beom-hoan, Se-Guen Park\",\"doi\":\"10.1109/ICVC.1999.820958\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel technique, named as \\\"Enhanced-ICP\\\", for a better etch process, has been proposed. Here, we report an improved result of the E-ICP. A photo-resist etch uniformity of below 1% within 10 cm in diameter has been accomplished with improved plasma density and the low electron temperature of 1 eV.\",\"PeriodicalId\":13415,\"journal\":{\"name\":\"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)\",\"volume\":\"273 1\",\"pages\":\"441-443\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-10-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICVC.1999.820958\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICVC.1999.820958","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

提出了一种新的技术,称为“增强型icp”,用于更好的蚀刻工艺。在这里,我们报告了E-ICP的改进结果。在提高等离子体密度和1 eV的低电子温度下,在直径10 cm内实现了小于1%的光阻蚀刻均匀性。
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Improved etching technique of E-ICP (Enhanced Inductively Coupled Plasma)
A novel technique, named as "Enhanced-ICP", for a better etch process, has been proposed. Here, we report an improved result of the E-ICP. A photo-resist etch uniformity of below 1% within 10 cm in diameter has been accomplished with improved plasma density and the low electron temperature of 1 eV.
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