{"title":"一个基于二进制可扩展,8.80 TOPS/W的CNN加速器,具有多核内存处理架构,具有896K突触/mm2","authors":"S. Okumura, M. Yabuuchi, K. Hijioka, Koichi Nose","doi":"10.23919/VLSIT.2019.8776544","DOIUrl":null,"url":null,"abstract":"A Processing-In-Memory (PIM) accelerator with ternary SRAM is proposed for low-power, large-scale deep neural network (DNN) processing. The accelerator consists of Ternary Neural Arithmetic Memory (TNAM) which is capable of bit-scalable MAC (multiply and accumulation) operation in accordance with target accuracy and power limit. An ADC less readout circuits to reduce analog-digital conversion power and a system-level variation avoidance technique utilizing features of TNAM are also proposed. A test chip with large-scale PIM is fabricated and successfully operate convolutional neural networks (CNNs) with 8.8TOPS/W and highest accuracy and area density among recent SRAM-type PIMs are obtained.","PeriodicalId":6752,"journal":{"name":"2019 Symposium on VLSI Technology","volume":"336 1","pages":"C248-C249"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"34","resultStr":"{\"title\":\"A Ternary Based Bit Scalable, 8.80 TOPS/W CNN accelerator with Many-core Processing-in-memory Architecture with 896K synapses/mm2\",\"authors\":\"S. Okumura, M. Yabuuchi, K. Hijioka, Koichi Nose\",\"doi\":\"10.23919/VLSIT.2019.8776544\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A Processing-In-Memory (PIM) accelerator with ternary SRAM is proposed for low-power, large-scale deep neural network (DNN) processing. The accelerator consists of Ternary Neural Arithmetic Memory (TNAM) which is capable of bit-scalable MAC (multiply and accumulation) operation in accordance with target accuracy and power limit. An ADC less readout circuits to reduce analog-digital conversion power and a system-level variation avoidance technique utilizing features of TNAM are also proposed. A test chip with large-scale PIM is fabricated and successfully operate convolutional neural networks (CNNs) with 8.8TOPS/W and highest accuracy and area density among recent SRAM-type PIMs are obtained.\",\"PeriodicalId\":6752,\"journal\":{\"name\":\"2019 Symposium on VLSI Technology\",\"volume\":\"336 1\",\"pages\":\"C248-C249\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-06-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"34\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 Symposium on VLSI Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/VLSIT.2019.8776544\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/VLSIT.2019.8776544","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Ternary Based Bit Scalable, 8.80 TOPS/W CNN accelerator with Many-core Processing-in-memory Architecture with 896K synapses/mm2
A Processing-In-Memory (PIM) accelerator with ternary SRAM is proposed for low-power, large-scale deep neural network (DNN) processing. The accelerator consists of Ternary Neural Arithmetic Memory (TNAM) which is capable of bit-scalable MAC (multiply and accumulation) operation in accordance with target accuracy and power limit. An ADC less readout circuits to reduce analog-digital conversion power and a system-level variation avoidance technique utilizing features of TNAM are also proposed. A test chip with large-scale PIM is fabricated and successfully operate convolutional neural networks (CNNs) with 8.8TOPS/W and highest accuracy and area density among recent SRAM-type PIMs are obtained.