未来技术节点局部互连尺寸效应的影响:基于全芯片布局的研究

A. Ceyhan, Moongon Jung, Shreepad Panth, S. Lim, A. Naeemi
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引用次数: 18

摘要

在本文中,我们研究了局部互连尺寸对集成电路(ic)性能的影响,该集成电路(ic)基于时序封闭的电路块gdsii级布局,具有详细的路由。为此,我们考虑到国际半导体技术路线图(ITRS)预测的缩放趋势,并假设各种尺寸效应参数集,为45、22、11和7纳米技术节点创建了多个标准单元和互连库。我们比较了使用这些库实现的电路设计的性能。
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Impact of size effects in local interconnects for future technology nodes: A study based on full-chip layouts
In this paper, we investigate the impact of local interconnect size effects on the performance of integrated circuits (ICs) based on timing-closed GDSII-level layouts of circuit blocks with detailed routing. For this purpose, we create multiple standard cell and interconnect libraries for 45-, 22-, 11- and 7-nm technology nodes considering scaling trends projected by the International Technology Roadmap for Semiconductors (ITRS) and assuming various sets of size effect parameters. We make comparisons between the performances of circuit designs that are implemented using these libraries.
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