NMOSFET热载流子诱导器件退化的仿真方法及应用

ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361) Pub Date : 1999-10-26 DOI:10.1109/ICVC.1999.820818

Sun-Ghil Lee, J. Choi, Sangyong Kim, M. Nam, J. Lee, K. Seo, H. Yoon

{"title":"NMOSFET热载流子诱导器件退化的仿真方法及应用","authors":"Sun-Ghil Lee, J. Choi, Sangyong Kim, M. Nam, J. Lee, K. Seo, H. Yoon","doi":"10.1109/ICVC.1999.820818","DOIUrl":null,"url":null,"abstract":"Hot carriers deteriorate the interface between Si and gate oxide, which causes the change of current level. We suggest a method for simulating hot carrier-induced device degradation. Based on the present model, we are able to calculate degraded I-V characteristics with time using 2-D process simulation TSUPREM-4 and 2-D device simulator MEDICI. We compare simulated results with experimental ones.","PeriodicalId":13415,"journal":{"name":"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)","volume":"1 1","pages":"49-52"},"PeriodicalIF":0.0000,"publicationDate":"1999-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Simulation method and application for the hot carrier-induced device degradation of NMOSFET\",\"authors\":\"Sun-Ghil Lee, J. Choi, Sangyong Kim, M. Nam, J. Lee, K. Seo, H. Yoon\",\"doi\":\"10.1109/ICVC.1999.820818\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Hot carriers deteriorate the interface between Si and gate oxide, which causes the change of current level. We suggest a method for simulating hot carrier-induced device degradation. Based on the present model, we are able to calculate degraded I-V characteristics with time using 2-D process simulation TSUPREM-4 and 2-D device simulator MEDICI. We compare simulated results with experimental ones.\",\"PeriodicalId\":13415,\"journal\":{\"name\":\"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)\",\"volume\":\"1 1\",\"pages\":\"49-52\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-10-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICVC.1999.820818\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICVC.1999.820818","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

热载流子破坏了硅与栅极氧化物之间的界面，引起电流水平的变化。我们提出了一种模拟热载流子引起的器件退化的方法。在此模型的基础上，利用二维过程仿真TSUPREM-4和二维器件模拟器MEDICI，我们能够计算出随时间衰减的I-V特性。我们将模拟结果与实验结果进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Simulation method and application for the hot carrier-induced device degradation of NMOSFET

Hot carriers deteriorate the interface between Si and gate oxide, which causes the change of current level. We suggest a method for simulating hot carrier-induced device degradation. Based on the present model, we are able to calculate degraded I-V characteristics with time using 2-D process simulation TSUPREM-4 and 2-D device simulator MEDICI. We compare simulated results with experimental ones.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)

自引率

0.00%

发文量