基于低功耗低纹波DC-DC转换器的3v 200mhz低噪声压控振荡器锁相环

Seung-Chul Lee, Joon-seok Lee, Sung-Ho Lee, Seunghoon Lee
{"title":"基于低功耗低纹波DC-DC转换器的3v 200mhz低噪声压控振荡器锁相环","authors":"Seung-Chul Lee, Joon-seok Lee, Sung-Ho Lee, Seunghoon Lee","doi":"10.1109/ICVC.1999.820928","DOIUrl":null,"url":null,"abstract":"This paper describes a phase-locked loop (PLL) clock generator with low sensitivity to power supply noise. A voltage controlled oscillator employing a source follower reduces power supply noise sensitivity with the proposed power-efficient low-ripple DC-DC converter. Simulated clock jitter is less than /spl plusmn/20 ps, with a 200 mV peak-to-peak sinusoidal noise signal of 1 MHz to 400 MHz applied to a power supply. The proposed PLL simulated in a 0.65 /spl mu/m double-poly double-metal CMOS process consumes 27 mW at 200 MHz from a 3 V supply. The prototype is under fabrication.","PeriodicalId":13415,"journal":{"name":"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)","volume":"1 1","pages":"346-348"},"PeriodicalIF":0.0000,"publicationDate":"1999-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A 3 V 200 MHz PLL with a low-noise VCO based on a power-efficient low-ripple DC-DC converter\",\"authors\":\"Seung-Chul Lee, Joon-seok Lee, Sung-Ho Lee, Seunghoon Lee\",\"doi\":\"10.1109/ICVC.1999.820928\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes a phase-locked loop (PLL) clock generator with low sensitivity to power supply noise. A voltage controlled oscillator employing a source follower reduces power supply noise sensitivity with the proposed power-efficient low-ripple DC-DC converter. Simulated clock jitter is less than /spl plusmn/20 ps, with a 200 mV peak-to-peak sinusoidal noise signal of 1 MHz to 400 MHz applied to a power supply. The proposed PLL simulated in a 0.65 /spl mu/m double-poly double-metal CMOS process consumes 27 mW at 200 MHz from a 3 V supply. The prototype is under fabrication.\",\"PeriodicalId\":13415,\"journal\":{\"name\":\"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)\",\"volume\":\"1 1\",\"pages\":\"346-348\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-10-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICVC.1999.820928\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICVC.1999.820928","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

介绍了一种对电源噪声低灵敏度的锁相环时钟发生器。采用源从动器的压控振荡器通过所提出的低功耗纹波DC-DC变换器降低了电源噪声敏感性。模拟时钟抖动小于/spl plusmn/ 20ps,在电源上施加200mv 1 MHz至400mhz的峰对峰正弦噪声信号。在0.65 /spl mu/m双聚双金属CMOS工艺中模拟的锁相环在200 MHz时从3v电源消耗27 mW。原型机正在制造中。
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A 3 V 200 MHz PLL with a low-noise VCO based on a power-efficient low-ripple DC-DC converter
This paper describes a phase-locked loop (PLL) clock generator with low sensitivity to power supply noise. A voltage controlled oscillator employing a source follower reduces power supply noise sensitivity with the proposed power-efficient low-ripple DC-DC converter. Simulated clock jitter is less than /spl plusmn/20 ps, with a 200 mV peak-to-peak sinusoidal noise signal of 1 MHz to 400 MHz applied to a power supply. The proposed PLL simulated in a 0.65 /spl mu/m double-poly double-metal CMOS process consumes 27 mW at 200 MHz from a 3 V supply. The prototype is under fabrication.
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