先进FinFET技术的可靠性表征

Kihyun Choi, T. Jeong, Jinju Kim, S. Choo, Young-Hoon Kim, M. Yeo, Miji Lee, Jinseok Kim, Euncheol Lee
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引用次数: 1

摘要

在本文中,我们将报告利用EUV开发的先进FinFET技术的可靠性表征。包括HCI, BTI和TDDB在内的固有器件可靠性在FinFET技术中是相当的,并且不会因缩小而降低。与使用ArF多模式相比,EUV单模式的使用显著改善了可靠性变化,从而提高了可靠性寿命。此外,长期可靠性结果支持TDDB遵循功率模型的寿命预测,使我们能够在缩放FinFET技术中利用更多的可靠性余量。
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Reliability Characterization on Advanced FinFET Technology
In this paper, we will report the reliability characterization of advanced FinFET technology which is developed by utilizing EUV. The intrinsic device reliability including HCI, BTI, and TDDB is comparable across FinFET technologies, and would not be degraded by scaling down. The use of EUV single patterning significantly improves reliability variation so that improved reliability lifetime compared to the use of ArF multi-patterning. Also, the fact that long-term reliability results support lifetime projection of TDDB follows power model, enables us to utilize more reliability margins in the scaled FinFET technologies.
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