利用离子束沉积技术优化低电阻率钨的微结构

F. Cerio, Rutvik J. Mehta, P. Turner, Jinho Kim, R. Caldwell
{"title":"利用离子束沉积技术优化低电阻率钨的微结构","authors":"F. Cerio, Rutvik J. Mehta, P. Turner, Jinho Kim, R. Caldwell","doi":"10.1109/IITC51362.2021.9537501","DOIUrl":null,"url":null,"abstract":"As feature sizes shrink with each integration node, wire and interconnect resistivity in the back end of the line increasingly becomes a challenge due to size dependent effects. Microstructural control of metal thin films is critical for accessing the lowest resistivities alongside materials choice. In this paper, we describe depositing a metal material onto a substrate via ion beam deposition with assist in a process chamber at a temperature of at least 250°C to produce ultra-low resistivity metal films. Ion beam deposited thin tungsten films were grown with large and highly oriented α(110) grains having a resistivity less than 9 μΩ-cm and thickness less than 300 Å, with no discernable β-phase, presaging benefits for memory and logic applications using tungsten for wiring.","PeriodicalId":6823,"journal":{"name":"2021 IEEE International Interconnect Technology Conference (IITC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Microstructural Optimization of Tungsten for Low Resistivity Using Ion Beam Deposition\",\"authors\":\"F. Cerio, Rutvik J. Mehta, P. Turner, Jinho Kim, R. Caldwell\",\"doi\":\"10.1109/IITC51362.2021.9537501\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"As feature sizes shrink with each integration node, wire and interconnect resistivity in the back end of the line increasingly becomes a challenge due to size dependent effects. Microstructural control of metal thin films is critical for accessing the lowest resistivities alongside materials choice. In this paper, we describe depositing a metal material onto a substrate via ion beam deposition with assist in a process chamber at a temperature of at least 250°C to produce ultra-low resistivity metal films. Ion beam deposited thin tungsten films were grown with large and highly oriented α(110) grains having a resistivity less than 9 μΩ-cm and thickness less than 300 Å, with no discernable β-phase, presaging benefits for memory and logic applications using tungsten for wiring.\",\"PeriodicalId\":6823,\"journal\":{\"name\":\"2021 IEEE International Interconnect Technology Conference (IITC)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-07-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE International Interconnect Technology Conference (IITC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC51362.2021.9537501\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International Interconnect Technology Conference (IITC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC51362.2021.9537501","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

随着每个集成节点的特征尺寸缩小,由于尺寸相关的影响,线路后端的导线和互连电阻率越来越成为一个挑战。金属薄膜的微结构控制是获得最低电阻率和材料选择的关键。在本文中,我们描述了在至少250°C的工艺室中,通过离子束沉积在辅助下将金属材料沉积到衬底上,以生产超低电阻率金属薄膜。离子束沉积的薄钨薄膜具有大而高取向的α(110)晶粒,其电阻率小于9 μΩ-cm,厚度小于300 Å,没有可识别的β相,预示着使用钨进行布线的存储和逻辑应用的优势。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Microstructural Optimization of Tungsten for Low Resistivity Using Ion Beam Deposition
As feature sizes shrink with each integration node, wire and interconnect resistivity in the back end of the line increasingly becomes a challenge due to size dependent effects. Microstructural control of metal thin films is critical for accessing the lowest resistivities alongside materials choice. In this paper, we describe depositing a metal material onto a substrate via ion beam deposition with assist in a process chamber at a temperature of at least 250°C to produce ultra-low resistivity metal films. Ion beam deposited thin tungsten films were grown with large and highly oriented α(110) grains having a resistivity less than 9 μΩ-cm and thickness less than 300 Å, with no discernable β-phase, presaging benefits for memory and logic applications using tungsten for wiring.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Contact Interface Characterization of Graphene contacted MoS2 FETs Controlled ALE-type recess of molybdenum for future logic and memory applications Comparison of Copper and Cobalt Surface Reactivity for Advanced Interconnects On-die Interconnect Innovations for Future Technology Nodes Advanced CMP Process Control by Using Machine Learning Image Analysis
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1