Vertical Stack Thermal Characterization of Heterogeneous Integration and Packages

Abstract

This paper presents thermal measurement data of GaN HEMT on CMOS heterogeneous integration (HI) using a Diverse Accessible Heterogeneous Integration (DAHI) process. Thermal T3ster measurements, a product and service available from Mentor are presented. The method uses thermal transients to characterize the vertical thermal path stack including the package. Here the thermal dominance of the thermal interface at the die attachment is apparent. The T3ster measurements are contrasted with in-channel micro-Raman thermal measurements along with simulated results.