Effective tests for memories based on faults models for low PPM defects

D. Lam, S. Y. Khim
{"title":"Effective tests for memories based on faults models for low PPM defects","authors":"D. Lam, S. Y. Khim","doi":"10.1109/MT.1993.263142","DOIUrl":null,"url":null,"abstract":"The authors describe how an understanding of failure modes and models allows better test algorithms and patterns to be generated to screen out those type of failures without lowering the general yield. Much of this understanding comes about only after extensive electrical analysis. A few case studies experienced by the authors are presented.<<ETX>>","PeriodicalId":248811,"journal":{"name":"Records of the 1993 IEEE International Workshop on Memory Testing","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Records of the 1993 IEEE International Workshop on Memory Testing","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MT.1993.263142","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

The authors describe how an understanding of failure modes and models allows better test algorithms and patterns to be generated to screen out those type of failures without lowering the general yield. Much of this understanding comes about only after extensive electrical analysis. A few case studies experienced by the authors are presented.<>
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
基于低PPM缺陷故障模型的存储器有效测试
作者描述了对故障模式和模型的理解如何能够生成更好的测试算法和模式,从而在不降低总体产量的情况下筛选出这些类型的故障。这种理解大部分是在广泛的电分析之后才产生的。介绍了作者所经历的几个案例。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Modeling of faulty behavior of ECL storage elements Functional testing of RAMs by random testing simulation Dynamic reconfiguration schemes for mega bit BiCMOS SRAMs A high-speed boundary search Shmoo plot for ULSI memories Effective tests for memories based on faults models for low PPM defects
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1