Development of a CDS Circuit for 3-D Stacked Neural Network Chip using CMOS Analog Signal Processing

K. Kiyoyama, Qian Zhengy, H. Hashimoto, H. Kino, T. Fukushima, Tetsu Tanaka
{"title":"Development of a CDS Circuit for 3-D Stacked Neural Network Chip using CMOS Analog Signal Processing","authors":"K. Kiyoyama, Qian Zhengy, H. Hashimoto, H. Kino, T. Fukushima, Tetsu Tanaka","doi":"10.1109/3DIC48104.2019.9058856","DOIUrl":null,"url":null,"abstract":"This paper describes a highly parallel analog signal processing method with three-dimensional (3-D) stacked neural network chip for convolutional and deep neural networks (CNNs and DNNs). The proposed chip has a stacked structure, which enables highly parallel mixed-signal operations like human brains with low power consumption. The product-sum operation using analog circuit in highly parallel calculation with low power supply current, but repeated calculations result in excessive noise (e.g. the offset voltage of the amplifier and 1/f noise, kT/C noise etc.) accumulation and degraded calculation accuracy. Therefore, analog signal processing with 3-D stacked multiple layers neural network chip require the noise reduction technique. In this design, correlated double sampling (CDS) is used to noise reduction technique with which reduce noise generated in the circuit. The proposed CDS circuit is designed with CMOS 0.18nm technology. As results of simulation analysis, it was confirmed that the CDS circuit reduced the offset voltage of composing amplifier and the noise voltages of the circuits placed before the CDS circuit to less than 1.25mV.","PeriodicalId":440556,"journal":{"name":"2019 International 3D Systems Integration Conference (3DIC)","volume":"116 2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International 3D Systems Integration Conference (3DIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/3DIC48104.2019.9058856","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

This paper describes a highly parallel analog signal processing method with three-dimensional (3-D) stacked neural network chip for convolutional and deep neural networks (CNNs and DNNs). The proposed chip has a stacked structure, which enables highly parallel mixed-signal operations like human brains with low power consumption. The product-sum operation using analog circuit in highly parallel calculation with low power supply current, but repeated calculations result in excessive noise (e.g. the offset voltage of the amplifier and 1/f noise, kT/C noise etc.) accumulation and degraded calculation accuracy. Therefore, analog signal processing with 3-D stacked multiple layers neural network chip require the noise reduction technique. In this design, correlated double sampling (CDS) is used to noise reduction technique with which reduce noise generated in the circuit. The proposed CDS circuit is designed with CMOS 0.18nm technology. As results of simulation analysis, it was confirmed that the CDS circuit reduced the offset voltage of composing amplifier and the noise voltages of the circuits placed before the CDS circuit to less than 1.25mV.
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基于CMOS模拟信号处理的三维堆叠神经网络芯片CDS电路的研制
本文介绍了一种基于三维堆叠神经网络芯片的卷积和深度神经网络(cnn和dnn)模拟信号高度并行处理方法。该芯片采用堆叠结构,可以像人脑一样以低功耗进行高度并行的混合信号操作。利用模拟电路进行积和运算,在低电源电流下进行高并行计算,但重复计算会导致过多的噪声(如放大器偏置电压和1/f噪声、kT/C噪声等)积累,降低计算精度。因此,利用三维多层堆叠神经网络芯片处理模拟信号需要降噪技术。本设计采用相关双采样(CDS)降噪技术,降低了电路中产生的噪声。所提出的CDS电路采用CMOS 0.18nm工艺设计。仿真分析结果表明,CDS电路将构成放大器的偏置电压和置于CDS电路前的电路的噪声电压降低到1.25mV以下。
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