Proposed equivalent circuit physics-based model of InP based double heterojunction bipolar transistors

Abstract

Significant discrepancies were found between experimental results and the results calculated by the conventional physics-based model for the cutoff frequency and some equivalent circuit parameters of double heterojunction bipolar transistors (DHBT). In order to accurately evaluate the primary quantitative performance of DHBT, a comprehensive physics-based model was developed and validated by comparing experimental data from three research institutions. The proposed physics-based model combines the equivalent circuit of the T-topology and hybrid-π topology, and includes modification formulas for estimating the intrinsic dynamic resistance of the base–collector and base-emitter junctions, as well as the cutoff frequency, the hybrid-π input capacitance, and the gain.