Expanding the potential of Zn0.15Sn0.85(Se0.95S0.05)2 crystals for applications in near-infrared optoelectronics, sensing, and Van der Waals heterojunctions

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Solid-state Electronics Pub Date : 2025-06-01 Epub Date: 2025-03-15 DOI:10.1016/j.sse.2025.109104

Yash N. Doshi , Dixita S. Parmar , Ajay D. Zanpadiya , Aditi P. Pathak , Divya R. Solanki , Dimple V. Shah , Vishva M. Jain , Hiren N. Desai , Piyush B. Patel

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Abstract

Layered Zn_0.15Sn_0.85(Se_0.95S_0.05)₂ (Q2) crystals with a hexagonal crystalline structure were grown using the direct vapor transport technique (DVT). This research explores applications of the grown Q2 crystals as a near-infrared (NIR) photodetector, vacuum pressure sensor, and Van der Waals heterojunction. The NIR photodetector demonstrating stable, rapid switching with an improved responsivity of 153.38 mAW^-1. A Q2 crystal-based NIR photodetector achieves an external quantum efficiency of 21.17 %. The Maxwellian distribution was applied to analysis trap depth of NIR photodetector. Additionally, the pulse resistive response of the Q2 crystal-based vacuum pressure sensor was evaluated across a vacuum pressure range from −1033 mbar to 0 mbar. The sensor exhibited a stable response, with 61.27 % at −1033 mbar and 5.85 % at −133 mbar with an average delay time of 2.99 s. Furthermore, the Van der Waals heterojunction device formed by the grown p-type Q2 crystals with another n-type quaternary crystal was studied using the thermionic-emission (TE) model. The ideality factors have been defined in the range of 1 to 2 by studying the current voltage (I-V) characteristics under different temperatures.

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扩大Zn0.15Sn0.85(Se0.95S0.05)2晶体在近红外光电子学、传感和范德华异质结中的应用潜力

采用直接气相输运技术（DVT）制备了具有六方结构的Zn0.15Sn0.85(Se0.95S0.05)2 （Q2）晶体。本研究探索了Q2晶体在近红外（NIR）光电探测器、真空压力传感器和范德华异质结等方面的应用。近红外光电探测器显示稳定，快速切换，提高了153.38 mAW-1的响应率。基于Q2晶体的近红外光电探测器的外量子效率达到21.17%。应用麦克斯韦分布分析了近红外探测器的陷阱深度。此外，Q2晶体真空压力传感器的脉冲电阻响应在- 1033mbar到0 mbar的真空压力范围内进行了评估。该传感器在- 1033 mbar和- 133 mbar下的响应率分别为61.27%和5.85%，平均延迟时间为2.99 s。此外，利用热离子发射（TE）模型研究了p型Q2晶体与n型四元晶体形成的范德华异质结器件。通过研究不同温度下的电流-电压（I-V）特性，确定了理想因数的取值范围为1 ~ 2。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.