A nanophotonic approach to signal-to-noise ratio of quantum dot infrared photodetectors with surface plasmonic excitation

IF 1.4 4区 物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Solid-state Electronics Pub Date : 2024-09-29 DOI:10.1016/j.sse.2024.109008
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Abstract

A nanophotonic approach to the signal-to-noise ratio (SNR) of an InAs-based quantum dot infrared photodetector (QDIP) with surface plasmonic excitation is reported. A 100 nm-thick Au film, perforated with a 3.1 μm-period, 2-dimensional square array of holes, referred to as a metal photonic crystal (MPC), is employed as a plasmonic coupler for it. Under the irradiance on the MPC integrated atop the QDIP, the fundamental surface plasma wave (SPW) is excited along their interface at ∼10.3 μm in wavelength. It carries the near-field that interacts with the quantum dots (QDs) under the interface. Depending on the presence of the coupler, the QDIP generates two different current–voltage (I-V) characteristics; one from the QDs normally working without MPC and the other from those coupled to the SPW near-field with it. The two I-V’s unfold the signal and noise current of each case with photoconductive gain. In their relation, generation-recombination and shot noises which are correlated with the detector signal current are directly affected by the plasmonic coupling but other sources including thermal noise are not relevant to it. Relying on these differences, the I-V analysis allows the SNR of each case and shows ∼20× enhancement by the plasmonic coupling. It reveals that most of the noise current is attributed to thermal fluctuations inherent to the quantum confinement of the QDIP. The SNR lower than the quantum efficiency in plasmonic enhancement is addressed.
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利用表面等离子体激发量子点红外光探测器信噪比的纳米光子方法
本研究报告采用一种纳米光子方法,通过表面等离子体激发来提高基于砷化铟的量子点红外光探测器(QDIP)的信噪比(SNR)。该器件采用了 100 nm 厚的金薄膜作为等离子耦合器,薄膜上穿有周期为 3.1 μm 的二维方形孔阵列,称为金属光子晶体 (MPC)。在集成于 QDIP 上的 MPC 上的辐照下,基本表面等离子体波(SPW)沿着波长为 10.3 μm 的界面被激发。它携带的近场与界面下的量子点(QDs)相互作用。根据耦合器的存在,QDIP 会产生两种不同的电流-电压(I-V)特性;一种特性来自正常工作时没有 MPC 的 QD,另一种特性来自与 SPW 近场耦合的 QD。这两个 I-V 反映了每种情况下具有光电导增益的信号电流和噪声电流。在它们之间的关系中,与探测器信号电流相关的生成-重组和射频噪声直接受到等离子耦合的影响,而包括热噪声在内的其他来源则与之无关。根据这些差异,I-V 分析可得出各种情况下的信噪比,并显示等离子体耦合可提高信噪比 ∼ 20 倍。分析表明,大部分噪声电流归因于 QDIP 量子约束固有的热波动。在等离子增强中,信噪比低于量子效率的问题得到了解决。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Solid-state Electronics
Solid-state Electronics 物理-工程:电子与电气
CiteScore
3.00
自引率
5.90%
发文量
212
审稿时长
3 months
期刊介绍: It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
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