Enhanced performance of p-GaN HEMT via partial etched AlGaN

Abstract

P-GaN high electron mobility transistor (HEMT) is currently the most commonly used enhanced GaN HEMT device. However, due to the presence of defects and traps, as well as the strong self-heating effect, p-GaN HEMT faces challenges with low breakdown voltage and poor device stability. In this study, a p-GaN HEMT structure via partially etched AlGaN has been proposed. The electrical and thermal performances of this device are thoroughly characterized and compared with conventional p-GaN HEMT. Through the proposed device structure, the breakdown voltage is increased from 290 V to 480 V, representing a 65 % improvement compared to conventional HEMT fabricated on the same wafer. The self-heating effect is also suppressed, resulting in a temperature reduction of 41.76 °C at a power level of 3.48 W. And more distinct temperature contrast images are obtained through thermoreflectance thermal imaging technology. This study provides a potential solution for fully leveraging the performance of p-GaN HEMT devices.