Q. Chen , L.Van Brandt , V. Kilchytska , E. Bestelink , R.A. Sporea , D. Flandre
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引用次数: 0
Abstract
The low-frequency noise (LFN) of thin-film polysilicon source-gated transistors (SGTs) is investigated. DC characteristics were firstly measured and typical behaviors of SGT were observed. Then, TCAD simulations were performed with different doping concentrations. Current density distribution shows that the variation of the conduction channel position in the thin film induces a second plateau in the (gm/ID)2 curves for bias points in subthreshold region. LFN was measured for both SGTs and thin-film field-effect transistor (TFTs) configurations. 1/f noise is confirmed as the main component of LFN in all our measurements. Carrier mobility fluctuation (CMF) is found to dominate the origin of LFN in TFT configuration and the low-current region of SGT. In the high-current region of SGT measurements, 1/f noise is mainly attributed to carrier number fluctuation (CNF).
期刊介绍：
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
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