K. Takemura, A. Ukita, Y. Ibusuki, M. Kurihara, A. Noriki, T. Amano, D. Okamoto, Yasuyuki Suzuki, K. Kurata
{"title":"芯片级封装硅光子收发器的垂直光电互连","authors":"K. Takemura, A. Ukita, Y. Ibusuki, M. Kurihara, A. Noriki, T. Amano, D. Okamoto, Yasuyuki Suzuki, K. Kurata","doi":"10.1109/3DIC48104.2019.9058778","DOIUrl":null,"url":null,"abstract":"Three-dimensional optical and electrical I/O structures for chip-scale Si photonic optical transceivers have been developed. The optical I/O structure, which is called an “optical pin,” has a vertical polymer waveguide structure. The waveguide structure has 125- $\\mu$ m-pitch 8°-tilted cores. The tilted cores were formed by oblique-illuminated exposure. The electrical I/O structure comprises 250- $\\mu$ m-pitch regularly-arranged through-glass-vias. As these I/O structures are configured on the same side of the Si photonic module, the configuration enables simultaneous optical and electrical bonding to a polymer-waveguide-embedded printed circuit board. The developed I/O structures minimize the packaging area and support 25-Gbps multimode transmission.","PeriodicalId":440556,"journal":{"name":"2019 International 3D Systems Integration Conference (3DIC)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Vertical Optical and Electrical Interconnection for Chip-Scale-Packaged Si Photonic Transceivers\",\"authors\":\"K. Takemura, A. Ukita, Y. Ibusuki, M. Kurihara, A. Noriki, T. Amano, D. Okamoto, Yasuyuki Suzuki, K. Kurata\",\"doi\":\"10.1109/3DIC48104.2019.9058778\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Three-dimensional optical and electrical I/O structures for chip-scale Si photonic optical transceivers have been developed. The optical I/O structure, which is called an “optical pin,” has a vertical polymer waveguide structure. The waveguide structure has 125- $\\\\mu$ m-pitch 8°-tilted cores. The tilted cores were formed by oblique-illuminated exposure. The electrical I/O structure comprises 250- $\\\\mu$ m-pitch regularly-arranged through-glass-vias. As these I/O structures are configured on the same side of the Si photonic module, the configuration enables simultaneous optical and electrical bonding to a polymer-waveguide-embedded printed circuit board. The developed I/O structures minimize the packaging area and support 25-Gbps multimode transmission.\",\"PeriodicalId\":440556,\"journal\":{\"name\":\"2019 International 3D Systems Integration Conference (3DIC)\",\"volume\":\"57 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 International 3D Systems Integration Conference (3DIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/3DIC48104.2019.9058778\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International 3D Systems Integration Conference (3DIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/3DIC48104.2019.9058778","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Vertical Optical and Electrical Interconnection for Chip-Scale-Packaged Si Photonic Transceivers
Three-dimensional optical and electrical I/O structures for chip-scale Si photonic optical transceivers have been developed. The optical I/O structure, which is called an “optical pin,” has a vertical polymer waveguide structure. The waveguide structure has 125- $\mu$ m-pitch 8°-tilted cores. The tilted cores were formed by oblique-illuminated exposure. The electrical I/O structure comprises 250- $\mu$ m-pitch regularly-arranged through-glass-vias. As these I/O structures are configured on the same side of the Si photonic module, the configuration enables simultaneous optical and electrical bonding to a polymer-waveguide-embedded printed circuit board. The developed I/O structures minimize the packaging area and support 25-Gbps multimode transmission.