具有高对准精度和电性能的晶圆直接混合键合演示

A. Jouve, L. Sanchez, C. Castan, N. Bresson, F. Fournel, N. Raynaud, P. Metzger
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引用次数: 8

摘要

芯片到晶圆(D2W)直接混合键合被视为未来3D组件的重大突破;然而,与晶圆到晶圆加工相比,其工业化带来了一些额外的挑战。本文介绍了LETI开发的300mm晶圆完整解决方案,用于提高使用铜互连的D2W混合键合的键合成品率,直到电气性能评估为止,这得益于专用的300mm电气测试车和强大的堆叠系统。得到了精度为+/-1.5μm的复合材料,结合界面良好(成键率达80%)。经过堆叠和退火后,模具可以减薄到10μm而不损坏。经过初步的环境可靠性测试,在连接超过20,000个的雏菊链上测量的电流产生率超过75%,并且显示出非常有限的漂移。这些结果证实了D2W混合键合技术具有很高的工业潜力。
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Die to Wafer Direct Hybid Bonding Demonstration with High Alignment Accuracy and Electrical Yields
Die-To-Wafer (D2W) direct hybrid bonding is foreseen as a major breakthrough for the future of 3D components; however, its industrialization rises some additional challenges compared to Wafer-To-Wafer processing. This paper presents a 300mm wafer complete solution developed at LETI to improve bonding yield of D2W hybrid bonding using copper interconnections until the assessment of the electrical performances thanks to a dedicated 300mm electrical test vehicle and robust stacking system. Stackings with +/-1.5μm accuracy and excellent bonding interface have been obtained (80% bonding yield). After stacking and annealing, the die can be thinned down to 10μm without damage. Electrical yield measured on daisy-chains with more than 20.000 connections present more than 75% yield and shown very limited drift after preliminary environmental reliability tests. All these results confirmed the high industrial potential of D2W hybrid bonding technology.
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