Kwang-Seong Choi, Y. Eom, Seok-Hwan Moon, Jiho Joo, Kwangjoo Lee, Jung Hak Kim, Ju Hyeon Kim
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Development of Laser-Assisted Bonding with Compression (LABC) Process for 3D IC Integration
Laser-Assisted Bonding with Compression (LABC) technology with NCF was proposed to accomplish the productivity and process reliability at the same time. A quartz block as a header was used to deliver a pressure to the devices because of its extremely low absorption of the laser during the bonding process. Newly developed NCF for LABC was designed to have stability on a hot stage and to show solder wetting and fast curing with no void and optimal fillet during the LABC bonding process. As the laser is used as a heat source, the uniform heat should be provided on each interconnection without any damages on chip or a substrate. 780μ-thick daisy chain top and bottom chips with the minimum pitch of 30^m and bump number of about 27,000 were successfully bonded using the LABC and NCF film.
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