{"title":"nv存储器是非易失性的吗?","authors":"D. Ratchev","doi":"10.1109/MT.1993.263141","DOIUrl":null,"url":null,"abstract":"Some results from qualification test procedures on 64 k (4 designs) and 256 k (4 designs) EEPROM as well as 1 M (4 designs) flash memories are presented. Electrical characterization, various environmental tests, and reliability tests on up to about 220 devices per design were performed. Different defect and failed devices were detected and failure analysis (whenever possible) was accomplished. The results indicate enhancements of the quality and reliability of newer NV-memory generations but the levels of other standard memories (DRAM, SRAM) are not reached yet.<<ETX>>","PeriodicalId":248811,"journal":{"name":"Records of the 1993 IEEE International Workshop on Memory Testing","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Are NV-memories non-volatile?\",\"authors\":\"D. Ratchev\",\"doi\":\"10.1109/MT.1993.263141\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Some results from qualification test procedures on 64 k (4 designs) and 256 k (4 designs) EEPROM as well as 1 M (4 designs) flash memories are presented. Electrical characterization, various environmental tests, and reliability tests on up to about 220 devices per design were performed. Different defect and failed devices were detected and failure analysis (whenever possible) was accomplished. The results indicate enhancements of the quality and reliability of newer NV-memory generations but the levels of other standard memories (DRAM, SRAM) are not reached yet.<<ETX>>\",\"PeriodicalId\":248811,\"journal\":{\"name\":\"Records of the 1993 IEEE International Workshop on Memory Testing\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-08-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Records of the 1993 IEEE International Workshop on Memory Testing\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MT.1993.263141\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Records of the 1993 IEEE International Workshop on Memory Testing","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MT.1993.263141","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Some results from qualification test procedures on 64 k (4 designs) and 256 k (4 designs) EEPROM as well as 1 M (4 designs) flash memories are presented. Electrical characterization, various environmental tests, and reliability tests on up to about 220 devices per design were performed. Different defect and failed devices were detected and failure analysis (whenever possible) was accomplished. The results indicate enhancements of the quality and reliability of newer NV-memory generations but the levels of other standard memories (DRAM, SRAM) are not reached yet.<>
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