{"title":"一种廉价的检测静态RAM局部参数缺陷的方法","authors":"Y. Savaria, C. Thibeault","doi":"10.1109/MT.1993.263143","DOIUrl":null,"url":null,"abstract":"The author presents an effective method of testing spot defects causing delay faults in SRAM circuits, without having to perform a full speed test of every single cell in a chip. The method is based on the detection of spot defects through the imbalance they cause to memory cells by transforming the imbalance effect into a permanent error. Such tests may be performed at a low speed, while retaining an excellent ability to detect non-catastrophic spot defects.<<ETX>>","PeriodicalId":248811,"journal":{"name":"Records of the 1993 IEEE International Workshop on Memory Testing","volume":"927 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"An inexpensive method of detecting localised parametric defects in static RAM\",\"authors\":\"Y. Savaria, C. Thibeault\",\"doi\":\"10.1109/MT.1993.263143\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The author presents an effective method of testing spot defects causing delay faults in SRAM circuits, without having to perform a full speed test of every single cell in a chip. The method is based on the detection of spot defects through the imbalance they cause to memory cells by transforming the imbalance effect into a permanent error. Such tests may be performed at a low speed, while retaining an excellent ability to detect non-catastrophic spot defects.<<ETX>>\",\"PeriodicalId\":248811,\"journal\":{\"name\":\"Records of the 1993 IEEE International Workshop on Memory Testing\",\"volume\":\"927 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-08-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Records of the 1993 IEEE International Workshop on Memory Testing\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MT.1993.263143\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Records of the 1993 IEEE International Workshop on Memory Testing","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MT.1993.263143","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An inexpensive method of detecting localised parametric defects in static RAM
The author presents an effective method of testing spot defects causing delay faults in SRAM circuits, without having to perform a full speed test of every single cell in a chip. The method is based on the detection of spot defects through the imbalance they cause to memory cells by transforming the imbalance effect into a permanent error. Such tests may be performed at a low speed, while retaining an excellent ability to detect non-catastrophic spot defects.<>
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