Power-Performance Advantages of InFO Technology for Advanced System Integration

Novel InFO technologies have been developed to meet high bandwidth, low power consumption and small form factor requirements for system integration with key characteristics of thin dielectric layers, fine RDL lines, 3D vertical interconnects and multi-chip integration. The powerperformance advantages of the technology from the characteristics on power integrity (PI), signal integrity (SI) and RF are studied and compared to those of organic substrate technology. For PI, the InFO with IPD (Integrated Passive Device) has 56% lower of system power delivery networking (PDN) impedance and 25% lower of the 1st voltage droop. For SI, the effect of line width on data rate and line density is studied and a record high 10 Tbps/mm of bandwidth density is obtained by the submicron RDL on InFO. For RF system integration, a 3D solenoid inductor on InFO package is demonstrated. The 3D inductor with 3 turns achieves Q-factor (quality factor) of 59 at 3GHz and the simulation and measurement results are consistent. The power-performance study indicates the InFO is a wide-spectrum application technology.