国际直线对撞机实验中采用绝缘体硅技术的三维集成像素传感器

M. Yamada, S. Ono, Y. Arai, I. Kurachi, T. Tsuboyama, M. Ikebe, M. Motoyoshi
{"title":"国际直线对撞机实验中采用绝缘体硅技术的三维集成像素传感器","authors":"M. Yamada, S. Ono, Y. Arai, I. Kurachi, T. Tsuboyama, M. Ikebe, M. Motoyoshi","doi":"10.1109/3DIC48104.2019.9058850","DOIUrl":null,"url":null,"abstract":"The international linear collider (ILC) experiment requires a vertex detector which is characterized by low hit occupancy, low material budget, high-speed readout and high spatial resolution better than 3 /xm. A high functional signal readout circuit and multi-analog memories have been implemented in a 20 × 20 μm,2 pixel with our 3D integration technology, Au micro-cylinder bump bonding, to maintain the spatial resolution. The material budget is lower than the conventional hybrid pixel detector used for high energy accelerator physics experiment by integrating monolithic pixel sensors, which are processed by Silicon-on-Insulator (SOI) technology. A 3D-integrated chip consists of two SOI pixel chips. The upper and lower chips are connected by Au micro-cylinder bump bonding instead of the generally used through silicon via (TSV). Analog and digital signals from the lower pixel are sent to the upper pixel via 3 /xm-diameter bumps. We have successfully demonstrated images of /3-ray tracks of 90 Sr by our prototype chip, SOFIST4, with a bump connection yield of 99.9 %.","PeriodicalId":440556,"journal":{"name":"2019 International 3D Systems Integration Conference (3DIC)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"3D Integrated Pixel Sensor with Silicon-on-Insulator Technology for the International Linear Collider Experiment\",\"authors\":\"M. Yamada, S. Ono, Y. Arai, I. Kurachi, T. Tsuboyama, M. Ikebe, M. Motoyoshi\",\"doi\":\"10.1109/3DIC48104.2019.9058850\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The international linear collider (ILC) experiment requires a vertex detector which is characterized by low hit occupancy, low material budget, high-speed readout and high spatial resolution better than 3 /xm. A high functional signal readout circuit and multi-analog memories have been implemented in a 20 × 20 μm,2 pixel with our 3D integration technology, Au micro-cylinder bump bonding, to maintain the spatial resolution. The material budget is lower than the conventional hybrid pixel detector used for high energy accelerator physics experiment by integrating monolithic pixel sensors, which are processed by Silicon-on-Insulator (SOI) technology. A 3D-integrated chip consists of two SOI pixel chips. The upper and lower chips are connected by Au micro-cylinder bump bonding instead of the generally used through silicon via (TSV). Analog and digital signals from the lower pixel are sent to the upper pixel via 3 /xm-diameter bumps. We have successfully demonstrated images of /3-ray tracks of 90 Sr by our prototype chip, SOFIST4, with a bump connection yield of 99.9 %.\",\"PeriodicalId\":440556,\"journal\":{\"name\":\"2019 International 3D Systems Integration Conference (3DIC)\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 International 3D Systems Integration Conference (3DIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/3DIC48104.2019.9058850\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International 3D Systems Integration Conference (3DIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/3DIC48104.2019.9058850","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

国际线性对撞机(ILC)实验需要一种低命中率占用、低材料预算、高速读出和大于3 /xm的高空间分辨率的顶点检测器。在20 × 20 μm,2像素的尺寸上实现了高功能信号读出电路和多模拟存储器,采用了我们的3D集成技术,Au微圆柱碰撞键合,以保持空间分辨率。通过集成采用绝缘体硅(Silicon-on-Insulator, SOI)技术处理的单片像元传感器,降低了用于高能加速器物理实验的传统混合像元探测器的材料预算。3d集成芯片由两个SOI像素芯片组成。上下芯片采用金微圆柱凸接方式连接,而不是一般采用的硅孔(TSV)连接。模拟和数字信号从下像素通过3 /xm直径的凸起发送到上像素。我们已经通过我们的原型芯片SOFIST4成功地展示了90sr的/3射线轨迹图像,凹凸连接率为99.9%。
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3D Integrated Pixel Sensor with Silicon-on-Insulator Technology for the International Linear Collider Experiment
The international linear collider (ILC) experiment requires a vertex detector which is characterized by low hit occupancy, low material budget, high-speed readout and high spatial resolution better than 3 /xm. A high functional signal readout circuit and multi-analog memories have been implemented in a 20 × 20 μm,2 pixel with our 3D integration technology, Au micro-cylinder bump bonding, to maintain the spatial resolution. The material budget is lower than the conventional hybrid pixel detector used for high energy accelerator physics experiment by integrating monolithic pixel sensors, which are processed by Silicon-on-Insulator (SOI) technology. A 3D-integrated chip consists of two SOI pixel chips. The upper and lower chips are connected by Au micro-cylinder bump bonding instead of the generally used through silicon via (TSV). Analog and digital signals from the lower pixel are sent to the upper pixel via 3 /xm-diameter bumps. We have successfully demonstrated images of /3-ray tracks of 90 Sr by our prototype chip, SOFIST4, with a bump connection yield of 99.9 %.
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