一种定位dram故障的最佳行军测试方法

Records of the 1993 IEEE International Workshop on Memory Testing Pub Date : 1993-08-09 DOI:10.1109/MT.1993.263148

Lin. Shen, B. Cockburn

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引用次数: 19

摘要

本文根据西门子4mbit dram的物理缺陷及其导致的故障行为，建立了实际故障模型，解决了故障定位问题。假设一个n*1的DRAM组织，他们推导出一个8n的下界，用于定位故障模型中所有故障的任何march测试的长度。然后，他们提出了一个行军测试，其长度与下界匹配，然后显示该测试具有100%的故障覆盖率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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An optimal march test for locating faults in DRAMs

The authors solve the fault location problem for a realistic fault model that is based on the physical defects and resulting faulty behaviours observed in 4 Mbit DRAMs manufactured by Siemens. Assuming an n*1 DRAM organization, they derive a lower bound of 8n on the length of any march test that locates all of the faults in the fault model. They then propose a march test whose length matches the lower bound, and then show that this test has 100% fault coverage.<>

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Records of the 1993 IEEE International Workshop on Memory Testing

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