Fabrication of High Quality InAs-on-Lnsulator Structures by Smart Cut Process with Reuse of InAs Wafers

InAs-On-Insulator structures are fabricated by the Smart Cut process and reusability of the donor InAs wafer without the degradation of film quality is also demonstrated. The effects of thermal annealing, which is expected to recover the damage induced by the implantation process, on the InAs-OI quality are studied. It is shown that annealing at 500 °C is effective to recover the crystallinity in terms of the Raman spectra and the electron mobility. No difference between InAs-OI fabricated with the original InAs wafer and the reused InAs wafer is observed. As a result, 140-nm-thick (111) InAs-OI fabricated by the reusing process is shown to have the electron Hall mobility of 6500 cm2/Vs and the carrier density of 6 × 1017 cm−3.