Yongjia Li , Di Gui , Feilu Chen , Wangran Wu , Weifeng Sun
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Abstract
In this paper, the electrical properties of the 600-V and 800-V super-junction (SJ) vertical double-diffused metal-oxide-semiconductor (VDMOS) with a non-vertical trench were examined thoroughly. The analytical model containing the trench angle was developed for SJ VDMOS with the full depletion (FD) working mode, confirmed by the experimental results and TCAD simulations. For the devices with the non-full depletion (NFD) working mode, impacts of trench angle on the electrical properties were studied by TCAD simulations. It is found that, for SJ VDMOSs with both FD mode and NFD mode, the trench angle of 89.8° accounts for the best device performance. Compared with the SJ VDMOS with the vertical trench, the device with the trench angle of 89.8° has 25 % lower minimum on-resistance and 100 % larger processing window.
期刊介绍：
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
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