理学最新文献

Miniaturized on-chip spectrometers with small footprints, lightweight, and low cost are in great demand for portable optical sensing, lab-on-chip systems, and so on. Such miniaturized spectrometers are usually based on engineered spectral response units and then reconstruct unknown spectra with algorithms. However, due to the limited footprints of computational on-chip spectrometers, the recovered spectral resolution is limited by the number of integrated spectral response units/filters. Thus, it is challenging to improve the spectral resolution without increasing the number of used filters. Here we present a computational on-chip spectrometer using electrochromic filter-based computational spectral units that can be electrochemically modulated to increase the efficient sampling number for higher spectral resolution. These filters are directly integrated on top of the photodetector pixels, and the spectral modulation of the filters results from redox reactions during the dual injection of ions and electrons into the electrochromic material. We experimentally demonstrate that the spectral resolution of the proposed spectrometer can be effectively improved as the number of applied voltages increases. The average difference of the peak wavelengths between the reconstructed and the reference spectra decreases from 1.61 nm to 0.29 nm. We also demonstrate the proposed spectrometer can be worked with only four or two filter units, assisted by electrochromic modulation. In addition, we also demonstrate that the electrochromic filter can be easily adapted for hyperspectral imaging, due to its uniform transparency. This strategy suggests a new way to enhance the performance of miniaturized spectrometers with tunable spectral filters for high resolution, low-cost, and portable spectral sensing, and would also inspire the exploration of other stimulus responses such as photochromic and force-chromic, etc, on computational spectrometers.

Deciphering the composite information within a light field through a single photodetector, without optical and mechanical structures, is challenging. The difficulty lies in extracting multi-dimensional optical information from a single dimension of photocurrent. Emerging photodetectors based on information reconstruction have potential, yet they only extract information contained in the photoresponse current amplitude (responsivity matrix), neglecting the hidden information in response edges driven by carrier dynamics. Herein, by adjusting the thickness of the absorption layer and the interface electric field strength in the perovskite photodiode, we extend the transport and relaxation time of carriers excited by photons of different wavelengths, maximizing the spectrum richness of the edge waveform in the light-dark transition process. For the first time, without the need for extra optical and electrical components, the reconstruction of two-dimensional information of light intensity and wavelength has been achieved. With the integration of machine learning algorithms into waveform data analysis, a wide operation spectrum range of 350–750 nm is available with a 100% accuracy rate. The restoration error has been lowered to less than 0.1% for light intensity. This work offers valuable insights for advancing perovskite applications in areas such as wavelength identification and spectrum imaging.

Cavity optomechanical systems have enabled precision sensing of magnetic fields, by leveraging the optical resonance-enhanced readout and mechanical resonance-enhanced response. Previous studies have successfully achieved mass-produced and reproducible microcavity optomechanical magnetometry (MCOM) by incorporating Terfenol-D thin films into high-quality (Q) factor whispering gallery mode (WGM) microcavities. However, the sensitivity was limited to 585 pT Hz^−1/2, over 20 times inferior to those using Terfenol-D particles. In this work, we propose and demonstrate a high-sensitivity and mass-produced MCOM approach by sputtering a FeGaB thin film onto a high-Q SiO₂ WGM microdisk. Theoretical studies are conducted to explore the magnetic actuation constant and noise-limited sensitivity by varying the parameters of the FeGaB film and SiO₂ microdisk. Multiple magnetometers with different radii are fabricated and characterized. By utilizing a microdisk with a radius of 355 μm and a thickness of 1 μm, along with a FeGaB film with a radius of 330 μm and a thickness of 1.3 μm, we have achieved a remarkable peak sensitivity of 1.68 pT Hz^−1/2 at 9.52 MHz. This represents a significant improvement of over two orders of magnitude compared with previous studies employing sputtered Terfenol-D film. Notably, the magnetometer operates without a bias magnetic field, thanks to the remarkable soft magnetic properties of the FeGaB film. Furthermore, as a proof of concept, we have demonstrated the real-time measurement of a pulsed magnetic field simulating the corona current in a high-voltage transmission line using our developed magnetometer. These high-sensitivity magnetometers hold great potential for various applications, such as magnetic induction tomography and corona current monitoring.

Given the surpassing of the Shockley-Quiesser efficiency limit in conventional p-n junction photovoltaic effect, bulk photovoltaic effect (BPVE) has garnered significant research interest. However, the BPVE primarily focuses on a narrow wavelength range, limiting its potential applications. Here we report a giant infrared bulk photovoltaic effect in tellurene (Te) for broad-spectrum neuromodulation. The generated photocurrent in uniformly illuminated Te excludes other photoelectric effects and is attributed to the BPVE. The bulk photovoltaic wavelength in Te spans a wide range from the ultraviolet (390 nm) to the mid-infrared (3.8 µm). Moreover, the photocurrent density of 70.4 A cm⁻² under infrared light simulation outperforms that in previous ultraviolet and visible semiconductors as well as infrared semimetals. Te attached to the dendrites or somata of the cortical neurons successfully elicit action potentials under broad-spectrum light irradiation. This work lays the foundation for the further development of infrared BPVE in narrow bandgap materials.

The on-chip measurement of polarization states plays an increasingly crucial role in modern sensing and imaging applications. While high-performance monolithic linearly polarized photodetectors have been extensively studied, integrated circularly polarized light (CPL) photodetectors are still hindered by inadequate discrimination capability. This study presents a broadband CPL photodetector utilizing achiral all-dielectric nanostructures, achieving an impressive discrimination ratio of ~107 at a wavelength of 405 nm. Our device shows outstanding CPL discrimination capability across the visible band without requiring intensity calibration. It functions based on the CPL-dependent near-field modes within achiral structures: under left or right CPL illumination, distinct near-field modes are excited, resulting in asymmetric irradiation of the two electrodes and generating a photovoltage with directions determined by the chirality of the incident light field. The proposed design strategy facilitates ultra-compact CPL detection across diverse materials, structures, and spectral ranges, presenting a novel avenue for achieving high-performance monolithic CPL detection.

Propagation properties of electromagnetic waves in an optical medium are mainly determined by the contour of equal-frequency states in ({boldsymbol{k}})-space. In photonic Weyl media, the topological surface waves lead to a unique open arc of the equal-frequency contour, called the Fermi arc. However, for most realistic Weyl systems, the shape of Fermi arcs is fixed due to the constant impedance of the surrounding medium, making it difficult to manipulate the surface wave. Here we demonstrate that by adjusting the thickness of the air layer sandwiched between two photonic Weyl media, the shape of the Fermi arc can be continuously changed from convex to concave. Moreover, we show that the concave Fermi-arc waves can be used to achieve topologically protected electromagnetic pulling forces over a broad range of angles in the air layer. Our finding offers a generally applicable strategy to shape the Fermi arc in photonic Weyl media.

Rapid synthesis of high-entropy alloy nanoparticles (HEA NPs) offers new opportunities to develop functional materials in widespread applications. Although some methods have successfully produced HEA NPs, these methods generally require rigorous conditions such as high pressure, high temperature, restricted atmosphere, and limited substrates, which impede practical viability. In this work, we report laser solid-phase synthesis of CrMnFeCoNi nanoparticles by laser irradiation of mixed metal precursors on a laser-induced graphene (LIG) support with a 3D porous structure. The CrMnFeCoNi nanoparticles are embraced by several graphene layers, forming graphene shell-encapsulated HEA nanoparticles. The mechanisms of the laser solid-phase synthesis of HEA NPs on LIG supports are investigated through theoretical simulation and experimental observations, in consideration of mixed metal precursor adsorption, thermal decomposition, reduction through electrons from laser-induced thermionic emission, and liquid beads splitting. The production rate reaches up to 30 g/h under the current laser setup. The laser-synthesized graphene shell-encapsulated CrMnFeCoNi NPs loaded on LIG-coated carbon paper are used directly as 3D binder-free integrated electrodes and exhibited excellent electrocatalytic activity towards oxygen evolution reaction with an overpotential of 293 mV at the current density of 10 mA/cm² and exceptional stability over 428 h in alkaline media, outperforming the commercial RuO₂ catalyst and the relevant catalysts reported by other methods. This work also demonstrates the versatility of this technique through the successful synthesis of CrMnFeCoNi oxide, sulfide, and phosphide nanoparticles.

The high pixel resolution is emerging as one of the key parameters for the next-generation displays. Despite the development of various quantum dot (QD) patterning techniques, achieving ultrahigh-resolution (>10,000 pixels per inch (PPI)) and high-fidelity QD patterns is still a tough challenge that needs to be addressed urgently. Here, we propose a novel and effective approach of orthogonal electric field-induced template-assisted dielectric electrophoretic deposition to successfully achieve one of the highest pixel resolutions of 23090 (PPI) with a high fidelity of up to 99%. Meanwhile, the proposed strategy is compatible with the preparation of QD pixels based on perovskite CsPbBr₃ and conventional CdSe QDs, exhibiting a wide applicability for QD pixel fabrication. Notably, we further demonstrate the great value of our approach to achieve efficiently electroluminescent QD pixels with a peak external quantum efficiency of 16.5%. Consequently, this work provides a general approach for realizing ultrahigh-resolution and high-fidelity patterns based on various QDs and a novel method for fabricating QD-patterned devices with high performance.

A novel non-volatile photonic-electronic memory, 3D integrating an Al-doped HfO₂ ferroelectric thin film onto a silicon photonic platform using fully compatible electronic and photonic fabrication processes, enables electrically/optically programmable, non-destructively readable, and multi-level storage functions.