Pub Date : 2026-02-06DOI: 10.1109/TSM.2026.3657883
{"title":"Call for Papers for a Special Issue of IEEE Transactions on Electron Devices: Ultrawide Band Gap Semiconductor Devices for RF, Power and Optoelectronic Applications","authors":"","doi":"10.1109/TSM.2026.3657883","DOIUrl":"https://doi.org/10.1109/TSM.2026.3657883","url":null,"abstract":"","PeriodicalId":451,"journal":{"name":"IEEE Transactions on Semiconductor Manufacturing","volume":"39 1","pages":"165-166"},"PeriodicalIF":2.3,"publicationDate":"2026-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11373219","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146122763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-06DOI: 10.1109/TSM.2025.3648625
{"title":"IEEE Transactions on Semiconductor Manufacturing Information for Authors","authors":"","doi":"10.1109/TSM.2025.3648625","DOIUrl":"https://doi.org/10.1109/TSM.2025.3648625","url":null,"abstract":"","PeriodicalId":451,"journal":{"name":"IEEE Transactions on Semiconductor Manufacturing","volume":"39 1","pages":"C3-C3"},"PeriodicalIF":2.3,"publicationDate":"2026-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11373124","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146122787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-23DOI: 10.1109/OJNANO.2026.3656032
{"title":"2025 Index IEEE Open Journal of Nanotechnology","authors":"","doi":"10.1109/OJNANO.2026.3656032","DOIUrl":"https://doi.org/10.1109/OJNANO.2026.3656032","url":null,"abstract":"","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"6 ","pages":"1-8"},"PeriodicalIF":1.9,"publicationDate":"2026-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11363072","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146026333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-20DOI: 10.1109/TNANO.2026.3656188
Sandeep Semwal;Pin Su;Abhinav Kranti
This paper proposes and analyzes various configurations of dual-doped (DD) reconfigurable field-effect transistors (RFET) that enable operation as p-type, n-type, and ambipolar operational modes through electrical connections of electrodes. This versatility, achieved through a single DD-RFET, is harnessed by demonstrating applications for analog design (frequency-doubling, phase-reversal, and phase-following applications) and logic operations (NOT, OR, NAND, and XOR). DD-RFET enables the realization of analog and logic blocks through a single device paving the way for area-efficient multifunctional processors.
{"title":"Electrically Configured Analog Signal Modulation and Logic Operation With Dual-Doped RFET","authors":"Sandeep Semwal;Pin Su;Abhinav Kranti","doi":"10.1109/TNANO.2026.3656188","DOIUrl":"https://doi.org/10.1109/TNANO.2026.3656188","url":null,"abstract":"This paper proposes and analyzes various configurations of dual-doped (DD) reconfigurable field-effect transistors (RFET) that enable operation as <italic>p</i>-type, <italic>n</i>-type, and ambipolar operational modes through electrical connections of electrodes. This versatility, achieved through a single DD-RFET, is harnessed by demonstrating applications for analog design (frequency-doubling, phase-reversal, and phase-following applications) and logic operations (NOT, OR, NAND, and XOR). DD-RFET enables the realization of analog and logic blocks through a single device paving the way for area-efficient multifunctional processors.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"25 ","pages":"32-37"},"PeriodicalIF":2.1,"publicationDate":"2026-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146082209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-19DOI: 10.1109/TDMR.2026.3653227
{"title":"2025 Index IEEE Transactions on Device and Materials Reliability Vol. 25","authors":"","doi":"10.1109/TDMR.2026.3653227","DOIUrl":"https://doi.org/10.1109/TDMR.2026.3653227","url":null,"abstract":"","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 4","pages":"1-33"},"PeriodicalIF":2.3,"publicationDate":"2026-01-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11357862","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146026389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-13DOI: 10.1109/TPS.2026.3651943
{"title":"Special Issue on Selected Papers from APSPT-14 May 2027","authors":"","doi":"10.1109/TPS.2026.3651943","DOIUrl":"https://doi.org/10.1109/TPS.2026.3651943","url":null,"abstract":"","PeriodicalId":450,"journal":{"name":"IEEE Transactions on Plasma Science","volume":"54 1","pages":"352-352"},"PeriodicalIF":1.5,"publicationDate":"2026-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11349680","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145957907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-13DOI: 10.1109/TPS.2026.3651947
{"title":"IEEE Transactions on Plasma Science Special Issue on Discharges and Electrical Insulation in Vacuum","authors":"","doi":"10.1109/TPS.2026.3651947","DOIUrl":"https://doi.org/10.1109/TPS.2026.3651947","url":null,"abstract":"","PeriodicalId":450,"journal":{"name":"IEEE Transactions on Plasma Science","volume":"54 1","pages":"351-351"},"PeriodicalIF":1.5,"publicationDate":"2026-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11349682","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145957898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：