Pub Date : 1900-01-01DOI: 10.1109/TSTMS.1996.6449219
F. M. Bufler, P. Graf, Bernd Meinerzhagen, B. Adeline, M. M. Rieger, H. Kibbel, G. Fischer
A comprehensive and thorough investigation of electron transport properties in unstrained and strained Si1−xGex alloys is presented. Ohmic majority and minority drift mobilities, effective densities of states and saturation drift velocities are reported up to Ge contents of x = 0.3. The mobility model is verified by measurements of the in-plane majority drift mobility for various dopant concentrations and Ge contents. Saturation drift velocities are determined by full band Monte Carlo simulations. In strained Si1−xGex there is no substantial reduction of the mobility component perpendicular to the Si/SiGe interface above dopant concentrations of 1019 cm−3 for increasing Ge content x. In contrast, the saturation drift velocity decreases strongly for growing Ge content.
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