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Fabrication of SiGe HBT BiCMOS Technology最新文献

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Industry Examples at the State-of-the-Art: Texas Instruments 最先进的行业例子:德州仪器
Fabrication of SiGe HBT BiCMOS Technology
Pub Date : 2018-10-03 DOI: 10.1201/9781315218892-21
{"title":"Industry Examples at the State-of-the-Art: Texas Instruments","authors":"","doi":"10.1201/9781315218892-21","DOIUrl":"https://doi.org/10.1201/9781315218892-21","url":null,"abstract":"","PeriodicalId":165278,"journal":{"name":"Fabrication of SiGe HBT BiCMOS Technology","volume":"21 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116234737","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Brief History of the Field 该领域的简史
Fabrication of SiGe HBT BiCMOS Technology
Pub Date : 2018-10-03 DOI: 10.1057/978-1-137-51446-2_2
M. Martens
{"title":"A Brief History of the Field","authors":"M. Martens","doi":"10.1057/978-1-137-51446-2_2","DOIUrl":"https://doi.org/10.1057/978-1-137-51446-2_2","url":null,"abstract":"","PeriodicalId":165278,"journal":{"name":"Fabrication of SiGe HBT BiCMOS Technology","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131023521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Industry Examples at the State-of-the-Art: Jazz 最先进的行业例子:爵士乐
Fabrication of SiGe HBT BiCMOS Technology
Pub Date : 2005-11-01 DOI: 10.1201/9781420026580.CH3.6
P. Kempf
{"title":"Industry Examples at the State-of-the-Art: Jazz","authors":"P. Kempf","doi":"10.1201/9781420026580.CH3.6","DOIUrl":"https://doi.org/10.1201/9781420026580.CH3.6","url":null,"abstract":"","PeriodicalId":165278,"journal":{"name":"Fabrication of SiGe HBT BiCMOS Technology","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125329241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Industry Examples at the State-of-the-Art: IHP 最先进的行业例子:IHP
Fabrication of SiGe HBT BiCMOS Technology
Pub Date : 2005-11-01 DOI: 10.1201/9781420026580.CH3.9
Dieter Knoll
{"title":"Industry Examples at the State-of-the-Art: IHP","authors":"Dieter Knoll","doi":"10.1201/9781420026580.CH3.9","DOIUrl":"https://doi.org/10.1201/9781420026580.CH3.9","url":null,"abstract":"","PeriodicalId":165278,"journal":{"name":"Fabrication of SiGe HBT BiCMOS Technology","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132310485","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Industry Examples at the State-of-the-Art: Infineon 最先进的行业范例:英飞凌
Fabrication of SiGe HBT BiCMOS Technology
Pub Date : 2005-11-01 DOI: 10.1201/9781420026580.CH3.8
J. Bock, H. Schafer, T. Meister, W. Perndl
{"title":"Industry Examples at the State-of-the-Art: Infineon","authors":"J. Bock, H. Schafer, T. Meister, W. Perndl","doi":"10.1201/9781420026580.CH3.8","DOIUrl":"https://doi.org/10.1201/9781420026580.CH3.8","url":null,"abstract":"","PeriodicalId":165278,"journal":{"name":"Fabrication of SiGe HBT BiCMOS Technology","volume":"120 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131308860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Industry Examples at the State-of-the-Art: IBM 最先进的行业例子:IBM
Fabrication of SiGe HBT BiCMOS Technology
Pub Date : 2005-11-01 DOI: 10.1201/9781420026580.CH3.5
A. Joseph, J. Dunn
{"title":"Industry Examples at the State-of-the-Art: IBM","authors":"A. Joseph, J. Dunn","doi":"10.1201/9781420026580.CH3.5","DOIUrl":"https://doi.org/10.1201/9781420026580.CH3.5","url":null,"abstract":"","PeriodicalId":165278,"journal":{"name":"Fabrication of SiGe HBT BiCMOS Technology","volume":"319 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116812652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Device Structures and BiCMOS Integration 器件结构和BiCMOS集成
Fabrication of SiGe HBT BiCMOS Technology
Pub Date : 2005-11-01 DOI: 10.1201/9781420026580.CH3.2
D. Harame
{"title":"Device Structures and BiCMOS Integration","authors":"D. Harame","doi":"10.1201/9781420026580.CH3.2","DOIUrl":"https://doi.org/10.1201/9781420026580.CH3.2","url":null,"abstract":"","PeriodicalId":165278,"journal":{"name":"Fabrication of SiGe HBT BiCMOS Technology","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127145411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Industry Examples at the State-of-the-Art: Philips 最先进的行业例子:飞利浦
Fabrication of SiGe HBT BiCMOS Technology
Pub Date : 2005-11-01 DOI: 10.1201/9781420026580.CH3.12
P. Deixler, R. Colclaser
{"title":"Industry Examples at the State-of-the-Art: Philips","authors":"P. Deixler, R. Colclaser","doi":"10.1201/9781420026580.CH3.12","DOIUrl":"https://doi.org/10.1201/9781420026580.CH3.12","url":null,"abstract":"","PeriodicalId":165278,"journal":{"name":"Fabrication of SiGe HBT BiCMOS Technology","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125694922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SiGe HBTs on CMOS-Compatible SOI 在cmos兼容的SOI上添加hbt
Fabrication of SiGe HBT BiCMOS Technology
Pub Date : 2005-11-01 DOI: 10.1201/9781420026580.CH3.3
Jin Cai, T. Ning
{"title":"SiGe HBTs on CMOS-Compatible SOI","authors":"Jin Cai, T. Ning","doi":"10.1201/9781420026580.CH3.3","DOIUrl":"https://doi.org/10.1201/9781420026580.CH3.3","url":null,"abstract":"","PeriodicalId":165278,"journal":{"name":"Fabrication of SiGe HBT BiCMOS Technology","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131908673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Overview: Fabrication of SiGe HBT BiCMOS Technology 概述:SiGe HBT BiCMOS技术的制备
Fabrication of SiGe HBT BiCMOS Technology
Pub Date : 2005-11-01 DOI: 10.1201/9781420026580.PT3
J. Cressler
{"title":"Overview: Fabrication of SiGe HBT BiCMOS Technology","authors":"J. Cressler","doi":"10.1201/9781420026580.PT3","DOIUrl":"https://doi.org/10.1201/9781420026580.PT3","url":null,"abstract":"","PeriodicalId":165278,"journal":{"name":"Fabrication of SiGe HBT BiCMOS Technology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129069621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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