Xudong Jiang, S. Wilton, I. Kudryashov, M. Itzler, M. Entwistle, Jack Kotelnikov, A. Katsnelson, Brian Piccione, M. Owens, K. Slomkowski, Scott C. Roszko, S. Rangwala
Publisher’s Note: This paper, originally published on 18 September 2018, was replaced with a corrected/revised version on 28 May 2020. If you downloaded the original PDF but are unable to access the revision, please contact SPIE Digital Library Customer Service for assistance.
{"title":"InGaAsP/InP Geiger-mode APD-based LiDAR (Erratum)","authors":"Xudong Jiang, S. Wilton, I. Kudryashov, M. Itzler, M. Entwistle, Jack Kotelnikov, A. Katsnelson, Brian Piccione, M. Owens, K. Slomkowski, Scott C. Roszko, S. Rangwala","doi":"10.1117/12.2574715","DOIUrl":"https://doi.org/10.1117/12.2574715","url":null,"abstract":"Publisher’s Note: This paper, originally published on 18 September 2018, was replaced with a corrected/revised version on 28 May 2020. If you downloaded the original PDF but are unable to access the revision, please contact SPIE Digital Library Customer Service for assistance.","PeriodicalId":170381,"journal":{"name":"Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz","volume":"472 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132959402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Ajay, M. Spies, J. Lähnemann, J. Polaczyński, Martien I. den-Hertog, E. Monroy
{"title":"III-nitride nanowire photodetectors (Conference Presentation)","authors":"A. Ajay, M. Spies, J. Lähnemann, J. Polaczyński, Martien I. den-Hertog, E. Monroy","doi":"10.1117/12.2322128","DOIUrl":"https://doi.org/10.1117/12.2322128","url":null,"abstract":"","PeriodicalId":170381,"journal":{"name":"Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz","volume":"451 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133781342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
G. Strasser, B. Schwarz, B. Hinkov, R. Szedlak, H. Detz, A. Andrews, W. Schrenk
{"title":"On-chip and remote sensing with quantum cascade laser and detector systems (Conference Presentation)","authors":"G. Strasser, B. Schwarz, B. Hinkov, R. Szedlak, H. Detz, A. Andrews, W. Schrenk","doi":"10.1117/12.2321253","DOIUrl":"https://doi.org/10.1117/12.2321253","url":null,"abstract":"","PeriodicalId":170381,"journal":{"name":"Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129131149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
D. Huffaker, D. Ren, K. M. Azizur-Rahman, Hyunseok Kim
Semiconductor nanowires are frequently highlighted as promising building blocks for next-generation optoelectronic devices. In this study, we explore infrared photodetectors based on selective-area nanowire arrays, spanning the wavelength spectrum from near-infrared (NIR) to mid-wavelength infrared (MWIR). Examples of these nanowire detectors include: NIR GaAs photodiodes, NIR InGaAs avalanche photodetectors (APDs), NIR InGaAs-GaAs single-photon photodiodes (SPADs), short-wavelength infrared (SWIR) InAs photodiodes, and MWIR InAsSb photodiodes. The small fill factor of nanowire arrays, i.e., the small junction area, is advantageous as it causes significant suppression of dark current, which further decreases the noise level and increases the detectivity. In addition, by utilizing metal nanostructures as 3D plasmonic gratings, we can enhance optical absorption in nanowires through excitation of surface plasmonic waves at metal-nanowire interfaces. Our work shows that, through proper design and fabrication, nanowire-based photodetectors can demonstrate equivalent or better performance compared to their planar device counterparts.
{"title":"Selective-area nanowire photodetectors: from near to mid-wavelength infrared (Conference Presentation)","authors":"D. Huffaker, D. Ren, K. M. Azizur-Rahman, Hyunseok Kim","doi":"10.1117/12.2502113","DOIUrl":"https://doi.org/10.1117/12.2502113","url":null,"abstract":"Semiconductor nanowires are frequently highlighted as promising building blocks for next-generation optoelectronic devices. In this study, we explore infrared photodetectors based on selective-area nanowire arrays, spanning the wavelength spectrum from near-infrared (NIR) to mid-wavelength infrared (MWIR). Examples of these nanowire detectors include: NIR GaAs photodiodes, NIR InGaAs avalanche photodetectors (APDs), NIR InGaAs-GaAs single-photon photodiodes (SPADs), short-wavelength infrared (SWIR) InAs photodiodes, and MWIR InAsSb photodiodes. The small fill factor of nanowire arrays, i.e., the small junction area, is advantageous as it causes significant suppression of dark current, which further decreases the noise level and increases the detectivity. In addition, by utilizing metal nanostructures as 3D plasmonic gratings, we can enhance optical absorption in nanowires through excitation of surface plasmonic waves at metal-nanowire interfaces. Our work shows that, through proper design and fabrication, nanowire-based photodetectors can demonstrate equivalent or better performance compared to their planar device counterparts.","PeriodicalId":170381,"journal":{"name":"Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133834113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Fatimy, Luke St. Marie, A. Nath, B. Kong, A. Boyd, R. Myers-Ward, K. Daniels, M. M. Jadidi, T. Murphy, D. K. Gaskill, P. Barbara
Atomically thin materials like semimetallic graphene and semiconducting transition metal dichalcogenides (TMDs) are an ideal platform for ultra-thin optoelectronic devices due to their direct bandgap (for monolayer thickness) and their considerable light absorption. For devices based on semiconducting TMDs, light detection occurs by optical excitation of charge carriers above the bandgap. For gapless graphene, light absorption causes a large increase in electron temperature, because of its small electronic heat capacity and weak electron-phonon coupling, making it suitable for hot-electron detectors. Here we show that, by nanostructuring graphene into quantum dots, we can exploit quantum confinement to achieve hot-electron bolometric detection. The graphene quantum dots are patterned from epitaxial graphene on SiC, with dot diameter ranging from 30 nm to 700 nm [1]. Nanostructuring greatly increases the temperature dependence of the electrical resistance, yielding detectors with extraordinary performance (responsivities of 1 × 10^(10) V W^(−1) and electrical noise-equivalent power, ∼2 × 10^(−16) W Hz^(−1/2) at 2.5 K). We will discuss how the dynamics of the charge carriers, namely the hot-electron cooling, affects the device operation and its power dependence. These detectors work in a very broad spectral range, from terahertz through telecom to ultraviolet radiation [2], with a design that is easily scalable for detector arrays. [1] El Fatimy, A. et al. , "Epitaxial graphene quantum dots for high-performance terahertz bolometers," Nature Nanotechnology 11, 335-338 (2016). [2] El Fatimy, A. et al. , "Ultra-broadband photodetectors based on epitaxial graphene quantum dots" Nanophotonics (2018).
原子薄材料，如半金属石墨烯和半导体过渡金属二硫族化合物(TMDs)，由于其直接带隙(单层厚度)和可观的光吸收，是超薄光电器件的理想平台。对于基于半导体tmd的器件，光探测是通过光激发带隙以上的载流子来实现的。对于无间隙石墨烯，由于其电子热容量小，电子-声子耦合弱，因此光吸收导致电子温度大幅升高，适合用于热电子探测器。在这里，我们表明，通过纳米结构的石墨烯成量子点，我们可以利用量子约束来实现热电子辐射检测。石墨烯量子点是由外延石墨烯在碳化硅上制成的，其点直径从30 nm到700 nm不等。纳米结构极大地增加了电阻的温度依赖性，产生了具有非凡性能的探测器(响应率为1 × 10^(10) V W^(−1)和电噪声等效功率，在2.5 K时为~ 2 × 10^(−16)W Hz^(−1/2))。我们将讨论电荷载流子的动力学，即热电子冷却，如何影响器件工作及其功率依赖性。这些探测器工作在非常宽的光谱范围内，从太赫兹到电信到紫外线辐射[2]，其设计很容易扩展到探测器阵列。[1] El Fatimy, A.等，“高性能太赫兹辐射热计的外延石墨烯量子点”，自然纳米技术11,335-338 (2016).El Fatimy, A. et al.，“基于外延石墨烯量子点的超宽带光电探测器”纳米光子学(2018)。
{"title":"Nanostructured epitaxial graphene for ultra-broadband optoelectronic detectors (Conference Presentation)","authors":"A. Fatimy, Luke St. Marie, A. Nath, B. Kong, A. Boyd, R. Myers-Ward, K. Daniels, M. M. Jadidi, T. Murphy, D. K. Gaskill, P. Barbara","doi":"10.1117/12.2321313","DOIUrl":"https://doi.org/10.1117/12.2321313","url":null,"abstract":"Atomically thin materials like semimetallic graphene and semiconducting transition metal dichalcogenides (TMDs) are an ideal platform for ultra-thin optoelectronic devices due to their direct bandgap (for monolayer thickness) and their considerable light absorption. For devices based on semiconducting TMDs, light detection occurs by optical excitation of charge carriers above the bandgap. For gapless graphene, light absorption causes a large increase in electron temperature, because of its small electronic heat capacity and weak electron-phonon coupling, making it suitable for hot-electron detectors. Here we show that, by nanostructuring graphene into quantum dots, we can exploit quantum confinement to achieve hot-electron bolometric detection. The graphene quantum dots are patterned from epitaxial graphene on SiC, with dot diameter ranging from 30 nm to 700 nm [1]. Nanostructuring greatly increases the temperature dependence of the electrical resistance, yielding detectors with extraordinary performance (responsivities of 1 × 10^(10) V W^(−1) and electrical noise-equivalent power, ∼2 × 10^(−16) W Hz^(−1/2) at 2.5 K). We will discuss how the dynamics of the charge carriers, namely the hot-electron cooling, affects the device operation and its power dependence. These detectors work in a very broad spectral range, from terahertz through telecom to ultraviolet radiation [2], with a design that is easily scalable for detector arrays. \u0000\u0000\u0000[1] El Fatimy, A. et al. , \"Epitaxial graphene quantum dots for high-performance terahertz bolometers,\" Nature Nanotechnology 11, 335-338 (2016).\u0000\u0000[2] El Fatimy, A. et al. , \"Ultra-broadband photodetectors based on epitaxial graphene quantum dots\" Nanophotonics (2018).","PeriodicalId":170381,"journal":{"name":"Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132501799","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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