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Annealing temperature effect on properties of chemically deposited PbTe films and bulk 退火温度对化学沉积PbTe薄膜和本体性能的影响
Pub Date : 2015-05-30 DOI: 10.31586/PHYSICOCHEMICAL.0202.02
Gh. Nashed
The PbTe films were deposited onto glass substrate (microscopic slices) by a chemical bath method (CBD) at room temperature. The deposited films are dense, smooth, and uniform with silver gray metallic luster structure. Using XRD, it found that the structure of PbTe possesses stable face centered cubic (fcc) phase. The grain size of the PbTe bulk increased within the range of 33– 57 nm with annealing temperature increasing.AFM micrographs of surface of the prepared film are observed that horizontal distance in the rang (230– 395) nm. The band gaps of the PbTe are determined from UV-Vis spectrophotometer and are found to be within the range (0.39 - 0.95) eV. Energy band gab of PbTe which determined from FT -IR spectrophotometer is (0.36ev). The activation energy varied from0.35- 1.72 eV for films and from0.11-0.34 eV for bulk with annealing temperature variations from 373-573K. Films and bulk exhibit p-type conduction and resistivity in the range (75×10-4&!. cm - 146×10-4U.cm). The carriers density and Hall mobility in PbTe bulk were in the rang 5.8 ×1023 m-3 and 4.004 m2/Vs.
采用化学浴法(CBD)在室温下将PbTe薄膜沉积在玻璃衬底(显微片)上。镀层致密、光滑、均匀,具有银灰色的金属光泽结构。XRD分析表明,PbTe具有稳定的面心立方相结构。随着退火温度的升高,PbTe体的晶粒尺寸在33ÂÂ ~ 57 nm范围内增大。在(230ÂÂ ~ 395) nm范围内观察到制备膜表面的AFM显微照片。用紫外-可见分光光度计测定了PbTe的带隙,其带隙在(0.39 ~ 0.95)eV范围内。FT -IR分光光度计测得PbTe的能带增益为(0.36ev)。薄膜的活化能在0.35 ~ 1.72 eV之间,体的活化能在0.11 ~ 0.34 eV之间,退火温度在373 ~ 573k之间。薄膜和体在(75×10-4&!)范围内呈现p型导电性和电阻率。cm - 146×10-4U.cm)。PbTe体中的载流子密度和霍尔迁移率分别为5.8 ×1023 m-3和4.004 m2/Vs。
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引用次数: 2
New design of hairpin-koch fractal filter for suppression of spurious band 抑制杂散带的发夹-科赫分形滤波器的新设计
Pub Date : 2013-09-01 DOI: 10.12785/IJTFST/020307
Amer Basim Shaalan, N. Habubi, S. Chiad, Z. Toma
The use of fractal geometries has significantly impacted many areas of science and engineering; one ofwhich ismicrowave filters.Microstrip filters have been widely used in a variety of microwave circuits and systems, it has received much attention because of the advantages such as compact and simple structures, small sizes, easy fabrication and low cost, etc., and all these features are the requirement of thewireless communication systems. The design of a hairpin-Koch filter has been proposed. This filter exhibits a periodic frequency response. The spurious bands are being suppressed significantly through the implementation ofKoch fractal on the micro strip coupled line.
分形几何的应用极大地影响了科学和工程的许多领域;其中之一是微波滤波器。微带滤波器已广泛应用于各种微波电路和系统中,由于其结构紧凑、简单、体积小、制作方便、成本低等优点而备受关注,而这些特点正是无线通信系统所需要的。提出了一种发夹-科赫滤波器的设计方案。该滤波器具有周期性的频率响应。通过在微带耦合线上实现koch分形,有效地抑制了杂散带。
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引用次数: 2
Novel cationic gemini surfactants with different chain length as corrosion inhibitors for carbon steel in 1 M HCl 不同链长的新型阳离子gemini表面活性剂在1m HCl中对碳钢的缓蚀剂
Pub Date : 2013-05-01 DOI: 10.21608/ASAT.2013.21885
M. Nessim, O. A. A. Elshamy, O.H.Abdelraheem, M. M. Osman
Three cationic gemini surfactants of the type N2,N3-dialkyl-N2,N2,N3,N3- tetramethylbutane diamminium bromide namely Ia, Ib and Ic have been synthesized. Their chemical structures were elucidated by the routine methodologies 1H-NMR, elemental analysis and mass spectroscopy. The surface active properties were examined and found to be influenced by the chemical structure of the surfactants. The synthesized cationic gemini surfactants were tested as corrosion inhibitors for pipeline carbon steel API X52 immersed in 1 M HCl solution, using weight loss method. The obtained data refer to very good inhibitive efficiencies vary with concentrations, and increase in the following order: Ia >Ib > Ic. The Quantum chemical parameters such as highest occupied molecular orbital (HOMO), lowest unoccupied molecular orbital (LUMO) energy levels, energy gap (EHOMO-ELUMO), the dipole moment and charge densities were calculated. The theoretical calculations were in good agreement with corrosion inhibition results.
合成了N2、N2 -二烷基-N2、N2、N3、N3-四甲基丁烷溴化二胺型三种阳离子gemini表面活性剂Ia、Ib和Ic。用常规的核磁共振、元素分析和质谱等方法对它们的化学结构进行了表征。研究了表面活性剂的表面活性,发现表面活性剂的化学结构对其表面活性有一定的影响。采用失重法对合成的阳离子gemini表面活性剂作为管道碳钢API X52在1 M盐酸溶液中的缓蚀剂进行了测试。得到的数据表明,抑制效率随浓度的变化而变化,并依次增大:Ia b> Ib b> Ic。计算了最高占据分子轨道(HOMO)、最低未占据分子轨道(LUMO)能级、能隙(EHOMO-ELUMO)、偶极矩和电荷密度等量子化学参数。理论计算与缓蚀结果吻合较好。
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引用次数: 1
Impact of dilution gases on structure, properties and growth of hydrogenated nanocrystalline silicon (nc-Si:H) prepared by HW-CVD method 稀释气体对HW-CVD法制备氢化纳米晶硅(nc-Si:H)结构、性能和生长的影响
Pub Date : 2013-05-01 DOI: 10.12785/IJTFST/020207
N. Bakr, T. Mubarak, N. Habubi
In this work we present a detailed structural, optical and electrical characterization of hydrogenated nanocrystalline silicon (nc-Si:H) thin films grown by hot wire chemical vapor deposition (HW-CVD) as a function of hydrogen (H2), argon (Ar) and helium (He) dilution of silane. A variety of analysis techniques such as Raman spectroscopy (RS), x-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, UV-Visible spectroscopy and conductivity measurements were used to characterize the grown films. We observed that these properties are greatly influenced by dilution of silane with H2,Ar and He. Characterization of these films by Raman spectroscopy and low angle x-ray diffraction revealed that the increase in H2 andAr dilution of silane endorses the growth of crystallinity in the films whereas increase in He dilution of silane deteriorates the film properties.An attempt has beenmade to explain the fundamental differences in nanocrystallization growth mechanism by addition of H2, Ar and He in silane.
在这项工作中,我们详细描述了通过热丝化学气相沉积(HW-CVD)生长的氢化纳米晶硅(nm - si:H)薄膜的结构、光学和电学特性,以及氢(H2)、氩(Ar)和氦(He)稀释硅烷的函数。利用拉曼光谱(RS)、x射线衍射(XRD)、傅里叶变换红外光谱(FTIR)、紫外可见光谱和电导率测量等多种分析技术对生长膜进行了表征。我们观察到硅烷与H2、Ar和He的稀释对这些性能有很大的影响。利用拉曼光谱和低角x射线衍射对膜进行表征表明,硅烷H2和ar稀释度的增加有利于膜结晶度的增长,而硅烷He稀释度的增加则会使膜的性能恶化。通过在硅烷中添加H2、Ar和He来解释纳米晶生长机制的根本差异。
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引用次数: 4
Electrical Characteristic Measurement of the Fabricated CdSe / P-Si Heterojunction Solar Cell under Radiation Effect 辐射效应下CdSe / P-Si异质结太阳能电池的电特性测量
Pub Date : 2012-08-31 DOI: 10.5923/J.MATERIALS.20120203.07
M. Ashry, S. Fares
The electrical and photovoltaic properties of CdSe/p-Si heterojunction solar cells prepared by evaporation cooting on a single-crystal p-type silicon substrates are examined, under(100) mw/cm 2 , 25℃. The best fabricated cell shows an open-circuit voltage before irradiation is(0.62V) and after irradiation is(0.44 V ). The short-circuit current density before irradiation is(34 mA/cm 2 ) and after irradiation is(13 mA/cm 2 ). The fill factor before irradiation is(53 %) and after irradiation is(44.7 %). The conversion efficiency(active area ) before irradiation is(11.1%) and after irradiation is(2.5%) .was observed during two-hour illumination test and after storing the cell in air for three months. The illumination is from the CdSe side(frontwall ) .The cells are analyzed using I-V and P-V measurements, spectral response and 1/C 2 -V measurements, with focus on the influence of the solar cell thickness, light intensity illumination and effective dose of γ-radiation, which play a crucial role to improve the solar cell efficiency. γ-irradiation campaign with different doses has been carried out on a series of solar cells.
在(100)mw/ cm2, 25℃条件下,研究了在单晶p型硅衬底上蒸发冷却制备的CdSe/p-Si异质结太阳能电池的电学和光伏性能。最佳制备电池辐照前开路电压为(0.62V),辐照后开路电压为(0.44 V)。辐照前短路电流密度为(34 mA/cm 2),辐照后短路电流密度为(13 mA/cm 2)。辐照前填充系数为53%,辐照后填充系数为44.7%。光照试验2小时及空气存放3个月观察光电池辐照前和辐照后的转换效率(有效面积)分别为11.1%和2.5%。利用I-V和P-V测量、光谱响应和1/ c2 -V测量对电池进行了分析,重点研究了太阳能电池厚度、光照强度和γ辐射有效剂量对电池效率的影响,这些因素对提高太阳能电池效率起着至关重要的作用。对一系列太阳能电池进行了不同剂量的γ辐照试验。
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引用次数: 9
Nanotechnology-an overview Nanotechnology-an概述
Pub Date : 2009-01-01 DOI: 10.1201/b11930-2
A. Lagashetty, A. Bhavikatti
Nanotechnology is an Interdisciplinary and integrates the science and technology. This technology is the materials at nanodimension. The approach at nanodimension towards manufacturing and fabrication will responds to the challenge for future competitiveness of much of the economy. Preparation of materials at nanodimension supports the growth of nanotechnology and which routes the nanotechnological applications. The emerging research materials are in the research stage and would be used in nanometer scale devices. Development of characterization technology is needed to understand the composition, structure, morphology and other requirements at nanodimension. This technology may be growing future and final technology and will be accessible out side the human regime.
纳米技术是一门跨学科、集科学与技术于一体的学科。这项技术是纳米尺度的材料。纳米尺度的制造和制造方法将应对未来经济竞争力的挑战。纳米材料的制备支持了纳米技术的发展,为纳米技术的应用指明了道路。新兴的研究材料正处于研究阶段,并将用于纳米级器件。需要发展表征技术来了解纳米尺度上的成分、结构、形态和其他要求。这项技术可能是未来和最终的技术,将在人类政权之外获得。
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引用次数: 4
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Materials Science: An Indian Journal
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