Pub Date : 2018-10-03DOI: 10.5772/INTECHOPEN.79378
P. Tue, Y. Takamura
As the most important multifunctional oxide material, lead zirconium titanate (PZT) has a diverse range of applications such as piezo actuators, ferroelectric nonvolatile memories, sensors, and transducers due to its excellent structural and electrical prop- erties. However, it generally requires a high annealing temperature (above 600°C) to attain the desired properties, which hinders the integration of PZT with silicon-based Complementary Metal Oxide Semiconductor (CMOS). Therefore, the fabrication of PZT films by a chemical solution deposition (CSD) at temperatures compatible with Si-CMOS technology or even with polymeric substrate for flexible electronics would be of high technological interest. So far, different strategies to decrease the crystallization tempera - ture of CSD-derived PZT films have been studied. This chapter presents a critical review on the low-temperature solution-processed PZT films and devices, and addresses chal - lenges for fundamental understanding and practical integration of multifunctional PZT in devices. In the first part, recent advances in fabrication of CSD-derived PZT films at a low temperature are thoroughly reviewed. The second part discusses various techniques for patterning PZT into micro-nano-sized patterns. Lastly, some potential applications of the low-temperature CSD-derived PZT films and devices are demonstrated.
{"title":"Lead Zirconium Titanate Films and Devices Made by a Low- Temperature Solution-Based Process","authors":"P. Tue, Y. Takamura","doi":"10.5772/INTECHOPEN.79378","DOIUrl":"https://doi.org/10.5772/INTECHOPEN.79378","url":null,"abstract":"As the most important multifunctional oxide material, lead zirconium titanate (PZT) has a diverse range of applications such as piezo actuators, ferroelectric nonvolatile memories, sensors, and transducers due to its excellent structural and electrical prop- erties. However, it generally requires a high annealing temperature (above 600°C) to attain the desired properties, which hinders the integration of PZT with silicon-based Complementary Metal Oxide Semiconductor (CMOS). Therefore, the fabrication of PZT films by a chemical solution deposition (CSD) at temperatures compatible with Si-CMOS technology or even with polymeric substrate for flexible electronics would be of high technological interest. So far, different strategies to decrease the crystallization tempera - ture of CSD-derived PZT films have been studied. This chapter presents a critical review on the low-temperature solution-processed PZT films and devices, and addresses chal - lenges for fundamental understanding and practical integration of multifunctional PZT in devices. In the first part, recent advances in fabrication of CSD-derived PZT films at a low temperature are thoroughly reviewed. The second part discusses various techniques for patterning PZT into micro-nano-sized patterns. Lastly, some potential applications of the low-temperature CSD-derived PZT films and devices are demonstrated.","PeriodicalId":224298,"journal":{"name":"Ferroelectrics and Their Applications","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126559502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-03DOI: 10.5772/intechopen.77238
Xin Chen, W. Krolikowski, Y. Sheng
Ferroelectric materials tend to form macroscopic domains of electric polarization. These domains have different orientations and coexist in the medium being separated by domain walls. In general, symmetry and structure of ferroelectric domain walls differ from their parent materials and consequently lead to abundant physical properties. In this book chapter, we review the nonlinear optical effects which are bundled with ferroelectric domain walls or whose properties can be significantly enhanced by the presence of domain walls. In particular, we have reviewed Google Scholar articles from 2008 to 2018 using the keywords “nonlinear Čerenkov radiation from ferroelectrics”. We show that the spatially steep modulation of the second-order nonlinear optical coefficient across the domain wall leads to strong emission of the Čerenkov second harmonic in bulk materials. This feature also enables an effective nondestructive method for three-dimensional visualization and diagnostics of ferroelectric domain structures with very high resolution and high contrast.
{"title":"Nonlinear Optical Effects at Ferroelectric Domain Walls","authors":"Xin Chen, W. Krolikowski, Y. Sheng","doi":"10.5772/intechopen.77238","DOIUrl":"https://doi.org/10.5772/intechopen.77238","url":null,"abstract":"Ferroelectric materials tend to form macroscopic domains of electric polarization. These domains have different orientations and coexist in the medium being separated by domain walls. In general, symmetry and structure of ferroelectric domain walls differ from their parent materials and consequently lead to abundant physical properties. In this book chapter, we review the nonlinear optical effects which are bundled with ferroelectric domain walls or whose properties can be significantly enhanced by the presence of domain walls. In particular, we have reviewed Google Scholar articles from 2008 to 2018 using the keywords “nonlinear Čerenkov radiation from ferroelectrics”. We show that the spatially steep modulation of the second-order nonlinear optical coefficient across the domain wall leads to strong emission of the Čerenkov second harmonic in bulk materials. This feature also enables an effective nondestructive method for three-dimensional visualization and diagnostics of ferroelectric domain structures with very high resolution and high contrast.","PeriodicalId":224298,"journal":{"name":"Ferroelectrics and Their Applications","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131308393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-03DOI: 10.5772/INTECHOPEN.76858
Amarilis Declet-Vega, Nelson E. Sepulveda-Ramos, Oscar MarceloSuárez
In recent years, scientists advanced the study of bio-ferroelectric composites to develop new environmentally friendly and inexpensive electronic elements such as capacitors, actuators, and transistors. Accordingly, the present research relates to composites made of chitosan-cellulose polymeric matrix and strontium titanate (STO) nanoparticles. The variables considered include different percentages of cellulose (15 and 25 v%) and strontium titanate nanoparticles (10 and 20 wt%). The electrical characterization of the composites included measuring their dielectric constant, current density, and conduc- tivity. The results suggest that the addition of STO nanoparticles raised the dielectric constant while lowering the current density and the conductivity of the nanocompos- ites. Moreover, although the cellulose addition increased the current density and the conductivity of the composites, it lowered their dielectric constant. Also, the resulting biocomposite capacitors could withstand up to 60 V without any detectable dielectric breakdown. The other two properties measured were the ultimate tensile strength (UTS) and the degradation temperature (Tdeg). Higher percentages of cellulose decreased the UTS and the Tdeg of the chitosan-cellulose composites while the addition of cellulose slightly raised these properties of the composites made of chitosan-cellulose and STO nanoparticles. The results proved that these types of biocomposites are apt as capacitors with adequate strength to withstand aggressive environments. This work was fully conducted in the facilities of the Nanotechnology Center hosted by the University of Puerto Rico – Mayagüez, from December 2014 to January 2017.
{"title":"On the Mechanical and Dielectric Properties of Biocomposites Containing Strontium Titanate Particles","authors":"Amarilis Declet-Vega, Nelson E. Sepulveda-Ramos, Oscar MarceloSuárez","doi":"10.5772/INTECHOPEN.76858","DOIUrl":"https://doi.org/10.5772/INTECHOPEN.76858","url":null,"abstract":"In recent years, scientists advanced the study of bio-ferroelectric composites to develop new environmentally friendly and inexpensive electronic elements such as capacitors, actuators, and transistors. Accordingly, the present research relates to composites made of chitosan-cellulose polymeric matrix and strontium titanate (STO) nanoparticles. The variables considered include different percentages of cellulose (15 and 25 v%) and strontium titanate nanoparticles (10 and 20 wt%). The electrical characterization of the composites included measuring their dielectric constant, current density, and conduc- tivity. The results suggest that the addition of STO nanoparticles raised the dielectric constant while lowering the current density and the conductivity of the nanocompos- ites. Moreover, although the cellulose addition increased the current density and the conductivity of the composites, it lowered their dielectric constant. Also, the resulting biocomposite capacitors could withstand up to 60 V without any detectable dielectric breakdown. The other two properties measured were the ultimate tensile strength (UTS) and the degradation temperature (Tdeg). Higher percentages of cellulose decreased the UTS and the Tdeg of the chitosan-cellulose composites while the addition of cellulose slightly raised these properties of the composites made of chitosan-cellulose and STO nanoparticles. The results proved that these types of biocomposites are apt as capacitors with adequate strength to withstand aggressive environments. This work was fully conducted in the facilities of the Nanotechnology Center hosted by the University of Puerto Rico – Mayagüez, from December 2014 to January 2017.","PeriodicalId":224298,"journal":{"name":"Ferroelectrics and Their Applications","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116749852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-03DOI: 10.5772/INTECHOPEN.77388
Bharat G. Baraskar, Pravin S. Kadhane, T. C. Darvade, A. James, R. Kambale
Dense microstructure BaTiO3 (BT) ceramic with c/a ~1.0144 and average grain size ~7.8 μm is developed by achieving the ferroelectric parameters Psat. = 24.13 μC/cm2 and Pr = 10.42 μC/cm2 with lower coercive field of Ec = 2.047 kV/cm. For BT ceramic, the “sprout” shape nature is observed for strain-electric field measurements with remnant strain ~ 0.212%, converse piezoelectric constant ~376.35 pm/V and electrostrictive coefficient Q33~ 0.03493 m4/C2. To tune the piezoelectric properties of BT ceramic, the substitutions of Ca2+ and Sn4+, Zr4+ are done for Ba2+ and Ti4+ sites respectively. The Ba0.7Ca0.3Ti1-xSnxO3 (x = 0.00, 0.025, 0.050, 0.075, and 0.1, BCST) system was studied with ferroelectric, piezoelectric and electrostrictive properties. The electrostrictive coefficient (Q33) ~ 0.0667 m4/C2 was observed for x = 0.075 and it is higher than the lead-based electrostrictive materials. Another (1-X) Ba0.95Ca0.05Ti0.92Sn0.08O3 (BCST) – (X) Ba0.95Ca0.05Ti0.92Zr0.08O3 (BCZT), ceramics (x = 0.00, 0.25, 0.50, 0.75, and 1) is studied. The BCST-BCZT ceramic system shows the increase of polymorphic phase transition temperatures toward the room temperature by Ca2+, Sn4+ and Zr4+ substitution. For BCST-BCZT system the composition x = 0.75 exhibits the d33, and Q33 values of 310 pC/N, 385 pm/V and 0.089 m4/C2 respectively which is greater than BT ceramics.
{"title":"BaTiO3-Based Lead-Free Electroceramics with Their Ferroelectric and Piezoelectric Properties Tuned by Ca2+, Sn4+ and Zr4+ Substitution Useful for Electrostrictive Device Application","authors":"Bharat G. Baraskar, Pravin S. Kadhane, T. C. Darvade, A. James, R. Kambale","doi":"10.5772/INTECHOPEN.77388","DOIUrl":"https://doi.org/10.5772/INTECHOPEN.77388","url":null,"abstract":"Dense microstructure BaTiO3 (BT) ceramic with c/a ~1.0144 and average grain size ~7.8 μm is developed by achieving the ferroelectric parameters Psat. = 24.13 μC/cm2 and Pr = 10.42 μC/cm2 with lower coercive field of Ec = 2.047 kV/cm. For BT ceramic, the “sprout” shape nature is observed for strain-electric field measurements with remnant strain ~ 0.212%, converse piezoelectric constant ~376.35 pm/V and electrostrictive coefficient Q33~ 0.03493 m4/C2. To tune the piezoelectric properties of BT ceramic, the substitutions of Ca2+ and Sn4+, Zr4+ are done for Ba2+ and Ti4+ sites respectively. The Ba0.7Ca0.3Ti1-xSnxO3 (x = 0.00, 0.025, 0.050, 0.075, and 0.1, BCST) system was studied with ferroelectric, piezoelectric and electrostrictive properties. The electrostrictive coefficient (Q33) ~ 0.0667 m4/C2 was observed for x = 0.075 and it is higher than the lead-based electrostrictive materials. Another (1-X) Ba0.95Ca0.05Ti0.92Sn0.08O3 (BCST) – (X) Ba0.95Ca0.05Ti0.92Zr0.08O3 (BCZT), ceramics (x = 0.00, 0.25, 0.50, 0.75, and 1) is studied. The BCST-BCZT ceramic system shows the increase of polymorphic phase transition temperatures toward the room temperature by Ca2+, Sn4+ and Zr4+ substitution. For BCST-BCZT system the composition x = 0.75 exhibits the d33, and Q33 values of 310 pC/N, 385 pm/V and 0.089 m4/C2 respectively which is greater than BT ceramics.","PeriodicalId":224298,"journal":{"name":"Ferroelectrics and Their Applications","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130416616","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-03DOI: 10.5772/INTECHOPEN.78262
A. Skaliukh
This chapter presents the prevalent mathematical models of irreversible processes in polycrystalline ferroelectric materials when they are subjected to intense electrical and mechanical influences. The main purpose of such models is to describe the dielectric hysteresis loops, with which the models of Rayleigh and Preisach coped well, though they were developed almost a 100 years ago. Nevertheless, in order to describe the whole gamut of material properties in irreversible polarization-depolarization processes, it was required in the last three decades to develop new approaches and methods that take into account the material structure and the physics of the process. In this chapter, we attempted to collect the most common one-dimensional models, with a view to give a brief description of the basics and approaches with the application of working formulas, algorithms and graphs of numerical calculations. On one-dimensional models, the basics of three-dimensional models are worked out, such as evolutionary laws, domains switching criteria, generalizations from “ hysteron ” to the polarization surface, and so on, so they are a necessary step in modeling. However, some of them proved to be so effective that they obtained the right to independent existence, as happened with the Preisach model, which found application in dynamic systems. This research is based on published articles, monographs, proceedings of conferences, and scientific reports of individual collectives published over the past 20 – 25 years. of polycrystalline ferroelectric media on the external effects of high-intensity electric and mechanical fields are considered. The bases of construction of each model are disassembled. The fundamentals of the construction of each of the well-known Rayleigh models, evolution models, models of plasticity theory, Preisach models, models of orientation switching, energy switching models, the Giles-Atherton model are analyzed and the results of their work in the form of hysteresis loops are presented. The main
{"title":"About Mathematical Models of Irreversible Polarization Processes of a Ferroelectric and Ferroelastic Polycrystals","authors":"A. Skaliukh","doi":"10.5772/INTECHOPEN.78262","DOIUrl":"https://doi.org/10.5772/INTECHOPEN.78262","url":null,"abstract":"This chapter presents the prevalent mathematical models of irreversible processes in polycrystalline ferroelectric materials when they are subjected to intense electrical and mechanical influences. The main purpose of such models is to describe the dielectric hysteresis loops, with which the models of Rayleigh and Preisach coped well, though they were developed almost a 100 years ago. Nevertheless, in order to describe the whole gamut of material properties in irreversible polarization-depolarization processes, it was required in the last three decades to develop new approaches and methods that take into account the material structure and the physics of the process. In this chapter, we attempted to collect the most common one-dimensional models, with a view to give a brief description of the basics and approaches with the application of working formulas, algorithms and graphs of numerical calculations. On one-dimensional models, the basics of three-dimensional models are worked out, such as evolutionary laws, domains switching criteria, generalizations from “ hysteron ” to the polarization surface, and so on, so they are a necessary step in modeling. However, some of them proved to be so effective that they obtained the right to independent existence, as happened with the Preisach model, which found application in dynamic systems. This research is based on published articles, monographs, proceedings of conferences, and scientific reports of individual collectives published over the past 20 – 25 years. of polycrystalline ferroelectric media on the external effects of high-intensity electric and mechanical fields are considered. The bases of construction of each model are disassembled. The fundamentals of the construction of each of the well-known Rayleigh models, evolution models, models of plasticity theory, Preisach models, models of orientation switching, energy switching models, the Giles-Atherton model are analyzed and the results of their work in the form of hysteresis loops are presented. The main","PeriodicalId":224298,"journal":{"name":"Ferroelectrics and Their Applications","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125353973","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-03DOI: 10.5772/INTECHOPEN.80643
Irzaman Husein, R. P. Jenie
{"title":"Introductory Chapter: Ferroelectrics Material and Their Applications","authors":"Irzaman Husein, R. P. Jenie","doi":"10.5772/INTECHOPEN.80643","DOIUrl":"https://doi.org/10.5772/INTECHOPEN.80643","url":null,"abstract":"","PeriodicalId":224298,"journal":{"name":"Ferroelectrics and Their Applications","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126993850","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Organic ferroelectric materials have unique characters comparing to their inorganic coun- terparts in electronics because they show the advantages such as low cost, lightweight, small thermal budget, flexible and nontoxic characteristics. The ferroelectric poly(vinylidene fluoride) (PVDF) is mostly desired for memory devices due to its polar phase. To obtain the ferroelectric memory devices for data storage, ultrathin PVDF films are required to allow for low operation voltages with both small roughness and free of pin-holes. Micron-meter thick films of ferroelectric phase PVDF can be easily achieved by many preparation methods. But the nanofilms could be mainly fabricated by coating method and Langmuir– Blodgett deposition technique. Meanwhile, according to the structure of devices, four types of organic memory cells using ferroelectric phase PVDF films were introduced, such as memory based on metal/organic semiconductor/metal ferroelectric tunnel junctions, organic capacitors, field effect transistor and organic diodes. The research has been mainly done in Zhang’s laboratory from September 2016 to explore the preparation and poten - tial applications of ferroelectric PVDF films. In this chapter, we summarize several device investigations and show the PVDF films have the promising memory applications.
{"title":"Preparation and Device Applications of Ferroelectric β-PVDF Films","authors":"Liuxia Ruan, Donghai Zhang, Junwei Tong, Jianli Kang, YufangChang, Lianqun Zhou, G. Qin, Xianmin Zhang","doi":"10.5772/INTECHOPEN.77167","DOIUrl":"https://doi.org/10.5772/INTECHOPEN.77167","url":null,"abstract":"Organic ferroelectric materials have unique characters comparing to their inorganic coun- terparts in electronics because they show the advantages such as low cost, lightweight, small thermal budget, flexible and nontoxic characteristics. The ferroelectric poly(vinylidene fluoride) (PVDF) is mostly desired for memory devices due to its polar phase. To obtain the ferroelectric memory devices for data storage, ultrathin PVDF films are required to allow for low operation voltages with both small roughness and free of pin-holes. Micron-meter thick films of ferroelectric phase PVDF can be easily achieved by many preparation methods. But the nanofilms could be mainly fabricated by coating method and Langmuir– Blodgett deposition technique. Meanwhile, according to the structure of devices, four types of organic memory cells using ferroelectric phase PVDF films were introduced, such as memory based on metal/organic semiconductor/metal ferroelectric tunnel junctions, organic capacitors, field effect transistor and organic diodes. The research has been mainly done in Zhang’s laboratory from September 2016 to explore the preparation and poten - tial applications of ferroelectric PVDF films. In this chapter, we summarize several device investigations and show the PVDF films have the promising memory applications.","PeriodicalId":224298,"journal":{"name":"Ferroelectrics and Their Applications","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116419395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-03DOI: 10.5772/INTECHOPEN.78238
Gao Rongli, Zhenhua Wang, Fu Chunlin, C. Wei, Chen Gang, Deng Xiaoling
Tetragonal BiFeO 3 films with the thickness of 30 nm were grown epitaxially on (001) ori - ented LaAlO 3 substrate by using pulsed laser deposition (PLD). The transverse photovol - taic effects were studied as a function of the sample directions in-plane as well as the angle between the linearly polarized light and the plane of the sample along X and Y directions. The absorption onset and the direct band gap are ~2.25 and ~2.52 eV, respectively. The pho - tocurrent depends not only on the sample directions in-plane but also on the angle between the linearly polarized light and the plane of the sample along X and Y directions. The results indicate that the bulk photovoltaic effect together with the depolarization field was ascribed to this phenomenon. Detailed analysis presents that the polarization direction is along [110] direction and this depolarization field induced photocurrent is equal to ~3.53 μA/cm 2 . The BPV induced photocurrent can be approximate described as Jx ≈ 2.23cos(2 θ ), such an angu lar dependence of photocurrent is produced as a consequence of asymmetric microscopic processes of carriers such as excitation and recombination.
{"title":"Ferroelectric Photovoltaic Effect","authors":"Gao Rongli, Zhenhua Wang, Fu Chunlin, C. Wei, Chen Gang, Deng Xiaoling","doi":"10.5772/INTECHOPEN.78238","DOIUrl":"https://doi.org/10.5772/INTECHOPEN.78238","url":null,"abstract":"Tetragonal BiFeO 3 films with the thickness of 30 nm were grown epitaxially on (001) ori - ented LaAlO 3 substrate by using pulsed laser deposition (PLD). The transverse photovol - taic effects were studied as a function of the sample directions in-plane as well as the angle between the linearly polarized light and the plane of the sample along X and Y directions. The absorption onset and the direct band gap are ~2.25 and ~2.52 eV, respectively. The pho - tocurrent depends not only on the sample directions in-plane but also on the angle between the linearly polarized light and the plane of the sample along X and Y directions. The results indicate that the bulk photovoltaic effect together with the depolarization field was ascribed to this phenomenon. Detailed analysis presents that the polarization direction is along [110] direction and this depolarization field induced photocurrent is equal to ~3.53 μA/cm 2 . The BPV induced photocurrent can be approximate described as Jx ≈ 2.23cos(2 θ ), such an angu lar dependence of photocurrent is produced as a consequence of asymmetric microscopic processes of carriers such as excitation and recombination.","PeriodicalId":224298,"journal":{"name":"Ferroelectrics and Their Applications","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121991072","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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