F. Sharov, S. Moxim, P. Lenahan, G. Haase, D. Hughart
{"title":"Comparing Atomic Scale Defects in Radiation and High Field Stress in Si/SiO2 MOSFETs.","authors":"F. Sharov, S. Moxim, P. Lenahan, G. Haase, D. Hughart","doi":"10.2172/1875033","DOIUrl":"https://doi.org/10.2172/1875033","url":null,"abstract":"","PeriodicalId":296487,"journal":{"name":"Proposed for presentation at the NSREC 2021 in , .","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130525181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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