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Oxide-based Materials and Devices XII最新文献

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Fabrication and surface-leakage suppression in (non-polar) m-Zn(Mg)O optoelectronic devices (非极性)m-Zn(Mg)O光电器件的制备和表面泄漏抑制
Pub Date : 2021-03-05 DOI: 10.1117/12.2584830
B. Hinkov, H. Hoang, D. Ristanić, M. Hugues, J. Chauveau, G. Strasser
Zincoxide is a rather new material system and promising candidate for mid-infrared (mir) and THz optoelectronic devices like quantum cascade lasers (QCLs) and detectors (QCDs) due to its twice as high LO-phonon energy as GaAs. The non-polar m-plane orientation allows designing and realizing such complex devices without internal electrical fields.We present the full fabrication scheme of such QCL/QCD devices including novel optimized etching techniques, surface leakage current suppression by multiple orders of magnitude and low resistance Ohmic contacts (~10^(-5) Ohm x cm^2). Optimized fabrication schemes resulted in fabrication yielding up to more than 80% of operational devices.
氧化锌是一种相当新的材料体系,由于其lo声子能量是GaAs的两倍,因此它是中红外(mir)和太赫兹光电子器件(如量子级联激光器(qcl)和探测器(QCDs)的有希望的候选者。非极性m平面取向允许设计和实现这种没有内部电场的复杂器件。我们提出了这种QCL/QCD器件的完整制造方案,包括新的优化蚀刻技术,表面泄漏电流抑制多个数量级和低电阻欧姆接触(~10^(-5)欧姆x cm^2)。优化的制造方案导致制造产量高达80%以上的操作设备。
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引用次数: 0
Front Matter: Volume 11687 封面:第11687卷
Pub Date : 1900-01-01 DOI: 10.1117/12.2596755
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引用次数: 0
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Oxide-based Materials and Devices XII
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