C. Tu, Yi-Shin Jou, Pin-Yi Chen, Cheng-Sao Chen, Yu-Chen Hsu, R. Chien, V. Schmidt, Kuei-Chih Feng, Sheng-Fen Wang, S. Haw
Recent emerging developments have demonstrated that bismuth ferrite is one of the promising lead-free perovskite materials for solar-energy harvesting, photoelectrochemical conversion, and photodetector. This work reports high short-circuit photocurrent densities ~1.2×1033 µA/cm2 in p-type gadolinium (Gd)-doped BiFeO3 ceramic with n-type indium-tin-oxide under 405 nm irradiation and sunlight at 102 mW/cm2 intensity, respectively. A polarization-enhanced photosensing responsivity (R) of ~5.4×10-2 A/W and detectivity (D*) of ~1.5×1011 Jones were achieved at low 405 nm irradiation. Enhanced photovoltaic conversion via a prior electric-field poling can be attributed to the p-n junction and field-modulated Schottky barrier in conjunction with domain nucleation, ordered polar nano-regions (PNRs), and increased O 2p-Fe 3d orbital hybridization. The network of domain walls and grain boundaries serves as conduction pathways for the photo-generated charge carriers. The remarkable improvement of photocurrent in polycrystalline Gd-doped BiFeO3 opens a window for using bismuth ferrite materials in self-powered UV-visible photodetector.
{"title":"Enhanced Photovoltaic and Photosensing Performances in Gadolinium-Doped Bismuth Ferrite","authors":"C. Tu, Yi-Shin Jou, Pin-Yi Chen, Cheng-Sao Chen, Yu-Chen Hsu, R. Chien, V. Schmidt, Kuei-Chih Feng, Sheng-Fen Wang, S. Haw","doi":"10.2139/ssrn.3659803","DOIUrl":"https://doi.org/10.2139/ssrn.3659803","url":null,"abstract":"Recent emerging developments have demonstrated that bismuth ferrite is one of the promising lead-free perovskite materials for solar-energy harvesting, photoelectrochemical conversion, and photodetector. This work reports high short-circuit photocurrent densities ~1.2×1033 µA/cm2 in p-type gadolinium (Gd)-doped BiFeO3 ceramic with n-type indium-tin-oxide under 405 nm irradiation and sunlight at 102 mW/cm2 intensity, respectively. A polarization-enhanced photosensing responsivity (R) of ~5.4×10-2 A/W and detectivity (D*) of ~1.5×1011 Jones were achieved at low 405 nm irradiation. Enhanced photovoltaic conversion via a prior electric-field poling can be attributed to the p-n junction and field-modulated Schottky barrier in conjunction with domain nucleation, ordered polar nano-regions (PNRs), and increased O 2p-Fe 3d orbital hybridization. The network of domain walls and grain boundaries serves as conduction pathways for the photo-generated charge carriers. The remarkable improvement of photocurrent in polycrystalline Gd-doped BiFeO3 opens a window for using bismuth ferrite materials in self-powered UV-visible photodetector.","PeriodicalId":346973,"journal":{"name":"EngRN: Energy Resources (Topic)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130635634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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