Pub Date : 2020-12-10DOI: 10.1093/oso/9780198767275.003.0014
V. Igor
This chapter describes the operating principles of photoconductive and photovoltaic detectors based on III–V semiconductors. The electrical characteristics of both photodiodes and majority carrier barrier structures are discussed starting with the diffusion equation. The chapter outlines the figures of merit used to evaluate the performance of infrared photodetectors including the responsivity, dark current density, and normalized detectivity. It discusses bulk-like and type II superlattice photodetectors and how the multistage arrangement of interband cascade detectors (ICDs) can reduce the dark current density at the expense of a lower responsivity. Detectors that employ intersubband optical transitions, namely, quantum-well infrared photodetectors and quantum cascade detectors, are also discussed. The chapter considers how the dark-current density can be suppressed in resonant-cavity and thin waveguide-based detectors. It concludes with a discussion of the requirements for high-speed operation and an overview of novel types of detectors that draw their inspiration from III–V semiconductor devices.
{"title":"Semiconductor Photodetectors","authors":"V. Igor","doi":"10.1093/oso/9780198767275.003.0014","DOIUrl":"https://doi.org/10.1093/oso/9780198767275.003.0014","url":null,"abstract":"This chapter describes the operating principles of photoconductive and photovoltaic detectors based on III–V semiconductors. The electrical characteristics of both photodiodes and majority carrier barrier structures are discussed starting with the diffusion equation. The chapter outlines the figures of merit used to evaluate the performance of infrared photodetectors including the responsivity, dark current density, and normalized detectivity. It discusses bulk-like and type II superlattice photodetectors and how the multistage arrangement of interband cascade detectors (ICDs) can reduce the dark current density at the expense of a lower responsivity. Detectors that employ intersubband optical transitions, namely, quantum-well infrared photodetectors and quantum cascade detectors, are also discussed. The chapter considers how the dark-current density can be suppressed in resonant-cavity and thin waveguide-based detectors. It concludes with a discussion of the requirements for high-speed operation and an overview of novel types of detectors that draw their inspiration from III–V semiconductor devices.","PeriodicalId":405462,"journal":{"name":"Bands and Photons in III-V Semiconductor Quantum Structures","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126239637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This chapter describes the most commonly used approaches for computing the band structure of active materials with intersubband optical transitions. The physics of quantum cascade lasers (QCLs) is discussed in detail, including the mechanisms that limit the threshold current density, threshold voltage, wall-plug efficiency, and temperature sensitivity of state-of-the-art devices. The important roles of phonon and interface roughness scattering in determining threshold are emphasized. The chapter also compares the performance of QCLs to other mid-IR lasers in considerable detail and makes some conclusions as to which sources are preferred depending on the emission wavelength and application. Finally, the physical principles of laser-based frequency combs, including self-starting frequency-modulated QCL combs, are discussed.
{"title":"Quantum Cascade Lasers","authors":"I. Vurgaftman","doi":"10.1063/PT.3.2482","DOIUrl":"https://doi.org/10.1063/PT.3.2482","url":null,"abstract":"This chapter describes the most commonly used approaches for computing the band structure of active materials with intersubband optical transitions. The physics of quantum cascade lasers (QCLs) is discussed in detail, including the mechanisms that limit the threshold current density, threshold voltage, wall-plug efficiency, and temperature sensitivity of state-of-the-art devices. The important roles of phonon and interface roughness scattering in determining threshold are emphasized. The chapter also compares the performance of QCLs to other mid-IR lasers in considerable detail and makes some conclusions as to which sources are preferred depending on the emission wavelength and application. Finally, the physical principles of laser-based frequency combs, including self-starting frequency-modulated QCL combs, are discussed.","PeriodicalId":405462,"journal":{"name":"Bands and Photons in III-V Semiconductor Quantum Structures","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116861318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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