The expansion of the integrated circuit industry in recent years has been primarily propelled by the progressive growth of metal-oxide-semiconductor field effect transistors (MOSFETs). The device is employed as a rapid switch in computers advanced. The switching speed of MOSFETs is significantly influenced by the selection of gate length, oxide dielectric materials, and oxide thickness. Gallium nitride nanotubes (GaNNT) with remarkable stability in ambient conditions, making them a promising candidate for use as channel material in the forthcoming era of MOSFET technology. This study utilizes ab initio simulation to examine the device functionality of double-gate (DG) GaNNT MOSFETs sub- under the impact of gate length, oxide dielectric material, and oxide thickness. The findings suggest that enhancing the gate length and dielectric constant, as well as reducing the oxide thickness, can lead to significant improvements in the ratio of , subthreshold swing (SS), transconductance ( ), power dissipation (PDP), and delay time ( ). The enhancement is notably conspicuous when considering a channel length that is for devices of n-type. Hence, GaNNT demonstrates significant potential as a channel material in the advancement of complementary MOSFETs that are compatible with both n-type and p-type devices.
{"title":"The impact of gate length, oxide dielectric materials, and oxide thickness on the GaNNT MOSFETs performance.","authors":"W. A Abdul-Hussein","doi":"10.37022/jis.v6i3.61","DOIUrl":"https://doi.org/10.37022/jis.v6i3.61","url":null,"abstract":"The expansion of the integrated circuit industry in recent years has been primarily propelled by the progressive growth of metal-oxide-semiconductor field effect transistors (MOSFETs). The device is employed as a rapid switch in computers advanced. The switching speed of MOSFETs is significantly influenced by the selection of gate length, oxide dielectric materials, and oxide thickness. Gallium nitride nanotubes (GaNNT) with remarkable stability in ambient conditions, making them a promising candidate for use as channel material in the forthcoming era of MOSFET technology. This study utilizes ab initio simulation to examine the device functionality of double-gate (DG) GaNNT MOSFETs sub- under the impact of gate length, oxide dielectric material, and oxide thickness. The findings suggest that enhancing the gate length and dielectric constant, as well as reducing the oxide thickness, can lead to significant improvements in the ratio of , subthreshold swing (SS), transconductance ( ), power dissipation (PDP), and delay time ( ). The enhancement is notably conspicuous when considering a channel length that is for devices of n-type. Hence, GaNNT demonstrates significant potential as a channel material in the advancement of complementary MOSFETs that are compatible with both n-type and p-type devices.","PeriodicalId":498663,"journal":{"name":"Journal of Integral Sciences","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135352976","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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