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Enhancing future technologies: Sol-Gel synthesis of Sr0.6Ag0.4MnO3 manganite perovskite 增强未来技术:Sr0.6Ag0.4MnO3 锰酸盐包晶的溶胶-凝胶合成
Pub Date : 2024-05-04 DOI: 10.17352/ojc.000038
Tayari Faouzia, Nassar Kais Iben, Benamara Majdi
The research successfully produced Sr0.6Ag0.4MnO3, a silver strontium manganite with the desired perovskite crystal structure, using the sol-gel technique. Extensive analysis revealed its notable characteristics, indicating potential uses across various fields. X-ray diffraction showed the compound's tetragonal structure at room temperature, affirming its stability. Morphological and chemical assessments confirmed the material's consistency and evenness, with crystallites averaging 27 nm (from XRD) and 90 nm (from SEM). The material displayed a ferro-paramagnetic transition at 375 K, suggesting suitability for magnetic applications, alongside a slight drop in electrical resistance under a magnetic field, hinting at potential magnetoresistive properties for electronic devices. In terms of dielectric properties, particularly at low frequencies, the material demonstrated a high dielectric constant and low tangent loss, indicating its potential for electrical components. Overall, these findings position Sr0.6Ag0.4MnO3 as a versatile material with promising applications in magnetism, electronics, and electrical components.
这项研究利用溶胶-凝胶技术成功制备出具有理想包晶体晶体结构的银锶锰矿--Sr0.6Ag0.4MnO3。广泛的分析表明了该化合物的显著特点,显示了其在各个领域的潜在用途。X 射线衍射显示,该化合物在室温下呈四方结构,这肯定了它的稳定性。形态和化学评估证实了该材料的一致性和均匀性,结晶平均为 27 nm(X 射线衍射)和 90 nm(扫描电子显微镜)。该材料在 375 K 时显示出铁磁-顺磁转变,表明其适合磁性应用,同时在磁场下电阻略有下降,暗示其具有潜在的磁阻特性,可用于电子设备。在介电性能方面,特别是在低频下,该材料显示出高介电常数和低正切损耗,表明其具有用于电子元件的潜力。总之,这些发现使 Sr0.6Ag0.4MnO3 成为一种多功能材料,在磁学、电子学和电气元件方面具有广阔的应用前景。
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引用次数: 0
Interaction of 6-Bromo- and 6-Chloro-Ubiquinone derivatives with mitochondrial electron transfer system 6-溴和 6-氯联醌衍生物与线粒体电子传递系统的相互作用
Pub Date : 2024-04-06 DOI: 10.17352/ojc.000036
Chang-An Yu, Xiao-long Li, Lian-Quan Gu, Yu Linda
To understand the reaction mechanism of quinone-mediated electron transfer, a series of ubiquinone (Q)-derivatives with a bromine or chlorine atom at the 6-position and a different alkyl side chains at the 5-position of the benzoquinone ring were synthesized and characterized. The chemical properties and electron transfer activities were compared with the native ubiquinone, Q0C10. The redox midpoint potential of 6-Bromo- and 6-chloro-Q derivatives is 142 mV and 148 mV, respectively. These 6-halo-Q derivatives are reducible by ascorbate alone or by succinate in the presence of succinate-ubiquinone reductase. The reduced 6-halo-Q (6-halo-QH2) can be oxidized by cytochrome c alone or via ubiquinol-cytochrome c reductase. In the presence of cytochrome c oxidase and cytochrome c, 6-halo-QH2 is oxidizable by oxygen. 6-Halo-Q derivatives are reducible by succinate via succinate-ubiquinone reductase. They function as an electron-mediator connecting succinate-Q reductase and cytochrome c oxidase and bypass ubiquinol-cytochrome c reductase in the mitochondrial electron-transfer chain. This bypassing results in a decrease in energy coupling efficiency and a lower P/O ratio. These compounds might have therapeutic value in treating diseases that are caused by the oversupply of energy.
为了了解醌介导的电子传递反应机制,我们合成并鉴定了一系列在苯醌环的 6 位含有溴原子或氯原子以及在 5 位含有不同烷基侧链的泛醌(Q)衍生物。化学特性和电子传递活性与原生泛醌 Q0C10 进行了比较。6 溴-Q 和 6 氯-Q 衍生物的氧化还原中点电位分别为 142 mV 和 148 mV。这些 6-卤-Q衍生物可被抗坏血酸单独还原,或在琥珀酸-泛醌还原酶作用下被琥珀酸还原。还原后的 6-卤-Q(6-卤-QH2)可单独被细胞色素 c 或通过泛醌-细胞色素 c 还原酶氧化。在细胞色素 c 氧化酶和细胞色素 c 的作用下,6-卤-QH2 可被氧气氧化。6-Halo-Q 衍生物可通过琥珀酸-泛醌还原酶被琥珀酸还原。它们是连接琥珀酸-Q 还原酶和细胞色素 c 氧化酶的电子媒介,可绕过线粒体电子传递链中的泛醌-细胞色素 c 还原酶。这种旁路导致能量耦合效率下降,P/O 比值降低。这些化合物可能对治疗因能量供应过剩引起的疾病有治疗价值。
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引用次数: 0
The transformative role of Computational Fluid Dynamics (CFD) in chemical engineering 计算流体动力学 (CFD) 在化学工程中的变革作用
Pub Date : 2024-03-12 DOI: 10.17352/ojc.000033
Lodh Bibhab Kumar
Chemical engineering is a discipline intrinsically linked to fluid behavior. From reaction kinetics to reactor design, understanding how fluids flow, mix, and transfer heat is paramount. Traditionally, this relied heavily on experimentation, a time-consuming and resource-intensive process. The emergence of Computational Fluid Dynamics (CFD) has revolutionized the field, offering a powerful in-silico approach to analyze fluid dynamics in chemical engineering processes. This review paper explores the transformative role of CFD, examining its impact on various aspects of chemical engineering, including reactor design, optimization, process intensification, scale-up, and safety analysis. The paper also discusses the challenges associated with CFD simulations, ongoing advancements in the field, and potential future directions.
化学工程是一门与流体行为有着内在联系的学科。从反应动力学到反应器设计,了解流体如何流动、混合和传热至关重要。传统上,这在很大程度上依赖于实验,这是一个耗时耗力的过程。计算流体动力学(CFD)的出现彻底改变了这一领域,为分析化学工程过程中的流体动力学提供了一种强大的内部方法。本综述论文探讨了 CFD 的变革性作用,研究了它对化学工程各方面的影响,包括反应器设计、优化、工艺强化、放大和安全分析。本文还讨论了与 CFD 模拟相关的挑战、该领域正在取得的进展以及潜在的未来发展方向。
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引用次数: 0
Intrinsic defects in non-irradiated silicon carbide crystals 非辐照碳化硅晶体的内在缺陷
Pub Date : 2024-03-12 DOI: 10.17352/ojc.000034
Mokhov Evgeniy N, Baranov Pavel G, Kazarova Olga P
A comprehensive study of the intrinsic defects in sublimation-grown SiC crystals, depending on the growth conditions and thermal annealing is carried out. Complexes of the intrinsic defects including carbon vacancy (VC) and impurities atoms are found in the Si-rich SiC crystals grown by physical vapor transport at low temperatures below 2200 °C. Similar defects are also observed in the SiC crystals irradiated with high-energy particles. Intrinsic defects in grown SiC crystals are characterized by high thermal stability, which is associated with the presence of active metastable clusters. Experimental evidence for the presence of the active clusters in the wide temperature range (up to 2600 °C) is presented. It is shown that intrinsic defects can be also introduced in the SiC crystal by high-temperature diffusion from the p-type epitaxial layer. Paramagnetic defects in SiC are considered a material platform for sensing, quantum photonics, and information processing at ambient conditions.
我们对升华生长的碳化硅晶体中的固有缺陷进行了全面研究,这些缺陷取决于生长条件和热退火。在 2200 °C 以下的低温条件下通过物理气相传输生长的富硅碳化硅晶体中发现了包括碳空位(VC)和杂质原子在内的本征缺陷复合物。在用高能粒子辐照的碳化硅晶体中也观察到了类似的缺陷。生长的碳化硅晶体中的固有缺陷具有高热稳定性的特点,这与活性逸散簇的存在有关。实验证明,活性簇存在于较宽的温度范围内(高达 2600 ℃)。实验表明,本征缺陷也可以通过从 p 型外延层的高温扩散引入碳化硅晶体。碳化硅中的顺磁缺陷被认为是环境条件下传感、量子光子学和信息处理的材料平台。
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引用次数: 0
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Open Journal of Chemistry
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