Pub Date : 2025-01-31DOI: 10.1109/JFLEX.2025.3530116
{"title":"IEEE Journal on Flexible Electronics Call for Papers: Special Issue on the Social Impact of the Internet of Medical Things: From Body Wearables to Brain Implants","authors":"","doi":"10.1109/JFLEX.2025.3530116","DOIUrl":"https://doi.org/10.1109/JFLEX.2025.3530116","url":null,"abstract":"","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"3 10","pages":"461-462"},"PeriodicalIF":0.0,"publicationDate":"2025-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10865827","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143107220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-03DOI: 10.1109/JFLEX.2025.3526083
Mohammed Hadhi Pazhaya Puthanveettil;Manvendra Singh;Siri Chandana Amarakonda;Subho Dasgupta
The flexible electronics domain has emerged as an alternate technology beyond silicon CMOS because of advancements in low-temperature solution-processable thin-film transistors (TFTs) and circuits. However, uniformity and scalability remain the main hindrances for solution-processed devices, especially when it comes to the deposition of nanomaterials. In this regard, directional assembly using dielectrophoresis is a quick and easy way to uniformly align 1-D nanostructures, for example, nanowires, to bridge a gap between the electrodes to form a transistor channel using nonlinear ac electric fields. In this study, high-hole mobility tellurium nanowires are assembled using nonlinear ac dielectrophoresis to fabricate electrolyte-gated TFTs (EG-TFTs) on a flexible substrate at room temperature. These p-type flexible transistors exhibit an on-off ratio of $3.3times 10^{2}$ , an ON-current density of 20 $mu $ A $mu $ m−1, a specific transconductance of 8.5 $mu $ S $mu $ m−1, and linear mobility of 20.6 cm2 V−1 s−1 with adequate mechanical strain tolerance.
{"title":"Directed Assembly of p-Type Tellurium Nanowires for Room-Temperature-Processed Thin-Film Transistors","authors":"Mohammed Hadhi Pazhaya Puthanveettil;Manvendra Singh;Siri Chandana Amarakonda;Subho Dasgupta","doi":"10.1109/JFLEX.2025.3526083","DOIUrl":"https://doi.org/10.1109/JFLEX.2025.3526083","url":null,"abstract":"The flexible electronics domain has emerged as an alternate technology beyond silicon CMOS because of advancements in low-temperature solution-processable thin-film transistors (TFTs) and circuits. However, uniformity and scalability remain the main hindrances for solution-processed devices, especially when it comes to the deposition of nanomaterials. In this regard, directional assembly using dielectrophoresis is a quick and easy way to uniformly align 1-D nanostructures, for example, nanowires, to bridge a gap between the electrodes to form a transistor channel using nonlinear ac electric fields. In this study, high-hole mobility tellurium nanowires are assembled using nonlinear ac dielectrophoresis to fabricate electrolyte-gated TFTs (EG-TFTs) on a flexible substrate at room temperature. These p-type flexible transistors exhibit an on-off ratio of <inline-formula> <tex-math>$3.3times 10^{2}$ </tex-math></inline-formula>, an ON-current density of 20 <inline-formula> <tex-math>$mu $ </tex-math></inline-formula>A <inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m−1, a specific transconductance of 8.5 <inline-formula> <tex-math>$mu $ </tex-math></inline-formula>S <inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m−1, and linear mobility of 20.6 cm2 V−1 s−1 with adequate mechanical strain tolerance.","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"3 10","pages":"454-460"},"PeriodicalIF":0.0,"publicationDate":"2025-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143107219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-17DOI: 10.1109/JFLEX.2024.3515772
{"title":"IEEE Journal on Flexible Electronics Call for Papers: Special Issue on Selected Papers from the 6th IEEE International Flexible Electronics Technology Conference (IFETC) 2024","authors":"","doi":"10.1109/JFLEX.2024.3515772","DOIUrl":"https://doi.org/10.1109/JFLEX.2024.3515772","url":null,"abstract":"","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"3 9","pages":"434-434"},"PeriodicalIF":0.0,"publicationDate":"2024-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10805789","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142844236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-01DOI: 10.1109/JFLEX.2024.3466615
Niels Benson;Riccardo Colella;Luisa Petti;Almudena Rivadeneyra;Gregory L. Whiting
{"title":"Guest Editorial: Special Issue on Direct Papers to the IEEE International Flexible Electronics Technology Conference (IFETC) 2024","authors":"Niels Benson;Riccardo Colella;Luisa Petti;Almudena Rivadeneyra;Gregory L. Whiting","doi":"10.1109/JFLEX.2024.3466615","DOIUrl":"https://doi.org/10.1109/JFLEX.2024.3466615","url":null,"abstract":"","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"3 7","pages":"290-291"},"PeriodicalIF":0.0,"publicationDate":"2024-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10741007","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142565609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-18DOI: 10.1109/JFLEX.2024.3483195
Muhammad Qasim Mehmood;Malik Adnan;Muhammad Hamza Zulfiqar;Khaled A. Aljaloud;Rimsha Sarwar;Rifaqat Hussain;Ali H. Alqahtani;Akram Alomainy
Nowadays, textile-based sensors are of great interest because of the significance of intelligent and smart textiles in wearable applications because of textiles’ washability, flexibility, and durability. We developed conductive yarn-based textile sensors for wearable multimode human-machine interfaces (HMIs), breathing, and walking pattern detection. The low-cost sewing process is used to develop interdigitated capacitive (IDC) sensor patterns on shirts, masks, and shoe soles using ultrafine highly conductive thread. Four sensor-based touchpads (SBTPs) were developed on the shirt and showed multiple modes of operation based on the pressure of the finger touch. The multimode capacitive sensors-based HMI is connected to the laptop wirelessly to perform three different functions from each sensor. The sensors exhibit a sensitivity of 34.675, 29.440, and 25.789 pF/N at low, medium, and high touch pressure. The developed mask detects the breathing pattern of humans, whether it’s slow, normal, or fast. Shoe Insole developed sensors to see the walking pattern, either slow, normal, or running. The response and recovery time of the sensor system is 11 and 10 ms, respectively. Sensors tested for 20000 detection cycles and responded stability. Also, the sensors responded accurately after washing with water and detergent water. Reported textile sensors are washable, flexible, stretchable, comfortable, and reusable, showing the practicality of proposed sensors for personalized healthcare, smart textiles, and electronic textiles (e-textiles).
{"title":"Textile-Based Washable Multimode Capacitive Sensors for Wearable Applications","authors":"Muhammad Qasim Mehmood;Malik Adnan;Muhammad Hamza Zulfiqar;Khaled A. Aljaloud;Rimsha Sarwar;Rifaqat Hussain;Ali H. Alqahtani;Akram Alomainy","doi":"10.1109/JFLEX.2024.3483195","DOIUrl":"https://doi.org/10.1109/JFLEX.2024.3483195","url":null,"abstract":"Nowadays, textile-based sensors are of great interest because of the significance of intelligent and smart textiles in wearable applications because of textiles’ washability, flexibility, and durability. We developed conductive yarn-based textile sensors for wearable multimode human-machine interfaces (HMIs), breathing, and walking pattern detection. The low-cost sewing process is used to develop interdigitated capacitive (IDC) sensor patterns on shirts, masks, and shoe soles using ultrafine highly conductive thread. Four sensor-based touchpads (SBTPs) were developed on the shirt and showed multiple modes of operation based on the pressure of the finger touch. The multimode capacitive sensors-based HMI is connected to the laptop wirelessly to perform three different functions from each sensor. The sensors exhibit a sensitivity of 34.675, 29.440, and 25.789 pF/N at low, medium, and high touch pressure. The developed mask detects the breathing pattern of humans, whether it’s slow, normal, or fast. Shoe Insole developed sensors to see the walking pattern, either slow, normal, or running. The response and recovery time of the sensor system is 11 and 10 ms, respectively. Sensors tested for 20000 detection cycles and responded stability. Also, the sensors responded accurately after washing with water and detergent water. Reported textile sensors are washable, flexible, stretchable, comfortable, and reusable, showing the practicality of proposed sensors for personalized healthcare, smart textiles, and electronic textiles (e-textiles).","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"3 10","pages":"445-453"},"PeriodicalIF":0.0,"publicationDate":"2024-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143107216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This article discusses the compact modeling of organic thin-film transistors (OTFTs) fabricated on both flexible and silicon substrates. These compact models are used to implement inverters, 2-input NAND gate, and half-adder circuits. For the compact modeling and circuit design, Silvaco TechModeler and Silvaco Gateway tools are utilized. Both the flexible and silicon substrate OTFTs operate at −2 V, with saturated currents of −2 and $- 3.9~mu $ A, respectively. Comparative analysis using dc and transient behavior reveals that the OTFT on the flexible substrate has a delay of 3.7 ns and a gain of 4.7, while the OTFT on the silicon substrate has a delay of 5.5 ns and a gain of 3.2. The OTFT on the flexible substrate is approximately 49% faster and exhibits a gain 1.47 times higher than the OTFT on the silicon substrate. Furthermore, the OTFT on the flexible substrate successfully realizes half-adder outputs for all four input cases (00, 01, 10, and 11), whereas the OTFT on the silicon substrate fails to do so for all cases. These results demonstrate that the OTFT on the flexible substrate significantly outperforms the OTFT on the silicon substrate in terms of delay, gain, and output consistency for the given inputs. In the future, the OTFT on the flexible substrate’s quick response, high gain, and reliable performance in NAND and half-adder circuits could offer advantages in the development of complex memory circuits, analog circuits, and other applications.
{"title":"Comparative Analysis of Compact Modeled of Low-Voltage OTFTs on Flexible and Silicon Substrates for the Implementation of Logic Circuits","authors":"Mukuljeet Singh Mehrolia;Ankit Verma;Abhishek Kumar Singh","doi":"10.1109/JFLEX.2024.3471489","DOIUrl":"https://doi.org/10.1109/JFLEX.2024.3471489","url":null,"abstract":"This article discusses the compact modeling of organic thin-film transistors (OTFTs) fabricated on both flexible and silicon substrates. These compact models are used to implement inverters, 2-input NAND gate, and half-adder circuits. For the compact modeling and circuit design, Silvaco TechModeler and Silvaco Gateway tools are utilized. Both the flexible and silicon substrate OTFTs operate at −2 V, with saturated currents of −2 and \u0000<inline-formula> <tex-math>$- 3.9~mu $ </tex-math></inline-formula>\u0000A, respectively. Comparative analysis using dc and transient behavior reveals that the OTFT on the flexible substrate has a delay of 3.7 ns and a gain of 4.7, while the OTFT on the silicon substrate has a delay of 5.5 ns and a gain of 3.2. The OTFT on the flexible substrate is approximately 49% faster and exhibits a gain 1.47 times higher than the OTFT on the silicon substrate. Furthermore, the OTFT on the flexible substrate successfully realizes half-adder outputs for all four input cases (00, 01, 10, and 11), whereas the OTFT on the silicon substrate fails to do so for all cases. These results demonstrate that the OTFT on the flexible substrate significantly outperforms the OTFT on the silicon substrate in terms of delay, gain, and output consistency for the given inputs. In the future, the OTFT on the flexible substrate’s quick response, high gain, and reliable performance in NAND and half-adder circuits could offer advantages in the development of complex memory circuits, analog circuits, and other applications.","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"3 7","pages":"341-347"},"PeriodicalIF":0.0,"publicationDate":"2024-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142565631","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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