Leon Leuppert, Adam Reupert, Thomas Diemant, Tom Philipp, Christine Kranz, Zhenyou Li and Maximilian Fichtner
The deposition behavior of two state-of-the-art electrolytes, magnesium tetrakis(hexafluoroisopropyloxy)borate (Mg[B(hfip)4]2) in dimethoxyethane (DME) and magnesium bis(hexamethyldisilazide) with two equivalents of aluminum chloride (Mg(HMDS)2–2AlCl3) in tetrahydrofuran (THF) was investigated. Using symmetric flooded magnesium–magnesium cells with different electrolyte concentrations and current densities the deposition process was monitored optically in situ by a video microscope. The deposits were also investigated by scanning electron microscopy (SEM) and energy-dispersive X-ray (EDX) spectroscopy and compared to deposition from methylmagnesium chloride (MeMgCl) in THF, known for its dendritic growth. Furthermore, the chemical composition of the surfaces after deposition was tested by X-ray photoelectron spectroscopy (XPS). In this work, MeMgCl showed unidirectional growth and for the harshest applied conditions, mossy deposition, but no branching dendrites as previously reported in the literature. Mg[B(hfip)4]2 and Mg(HMDS)2–2AlCl3 did not show the formation of dendrites or a dendrite preform but also did not result in the desired smooth layer but in spherical deposits. For the Mg[B(hfip)4]2 electrolyte, the influence of magnesium borohydride (Mg(BH4)2) as an additive was additionally tested, resulting in a more planar growth.
研究了两种最先进电解质的沉积行为,一种是二甲氧基乙烷(DME)中的四(六氟异丙氧基)硼酸镁(Mg[B(hfip)4]2),另一种是四氢呋喃(THF)中的双(六甲基二硅氮化镁)与两个当量的氯化铝(Mg(HMDS)2-2AlCl3)。使用不同电解液浓度和电流密度的对称淹没式镁-镁电池,通过视频显微镜对沉积过程进行了现场光学监控。沉积物还通过扫描电子显微镜(SEM)和能量色散 X 射线(EDX)光谱进行了研究,并与四氢呋喃中甲基氯化镁(MeMgCl)的沉积进行了比较,后者以树枝状生长而著称。此外,还利用 X 射线光电子能谱 (XPS) 测试了沉积后表面的化学成分。在这项工作中,MeMgCl 显示出单向生长,在最苛刻的应用条件下,出现了苔藓沉积,但没有出现之前文献中报道的树枝状分支。Mg[B(hfip)4]2和Mg(HMDS)2-2AlCl3没有形成树枝状或树枝状预型,但也没有形成理想的光滑层,而是形成了球形沉积。对于 Mg[B(hfip)4]2电解质,还测试了添加剂硼氢化镁(Mg(BH4)2)的影响,结果发现其生长更为平整。
{"title":"Electrolyte-dependent deposition morphology on magnesium metal utilizing MeMgCl, Mg[B(hfip)4]2 and Mg(HMDS)2–2AlCl3 electrolytes†","authors":"Leon Leuppert, Adam Reupert, Thomas Diemant, Tom Philipp, Christine Kranz, Zhenyou Li and Maximilian Fichtner","doi":"10.1039/D4LF00124A","DOIUrl":"https://doi.org/10.1039/D4LF00124A","url":null,"abstract":"<p >The deposition behavior of two state-of-the-art electrolytes, magnesium tetrakis(hexafluoroisopropyloxy)borate (Mg[B(hfip)<small><sub>4</sub></small>]<small><sub>2</sub></small>) in dimethoxyethane (DME) and magnesium bis(hexamethyldisilazide) with two equivalents of aluminum chloride (Mg(HMDS)<small><sub>2</sub></small>–2AlCl<small><sub>3</sub></small>) in tetrahydrofuran (THF) was investigated. Using symmetric flooded magnesium–magnesium cells with different electrolyte concentrations and current densities the deposition process was monitored optically <em>in situ</em> by a video microscope. The deposits were also investigated by scanning electron microscopy (SEM) and energy-dispersive X-ray (EDX) spectroscopy and compared to deposition from methylmagnesium chloride (MeMgCl) in THF, known for its dendritic growth. Furthermore, the chemical composition of the surfaces after deposition was tested by X-ray photoelectron spectroscopy (XPS). In this work, MeMgCl showed unidirectional growth and for the harshest applied conditions, mossy deposition, but no branching dendrites as previously reported in the literature. Mg[B(hfip)<small><sub>4</sub></small>]<small><sub>2</sub></small> and Mg(HMDS)<small><sub>2</sub></small>–2AlCl<small><sub>3</sub></small> did not show the formation of dendrites or a dendrite preform but also did not result in the desired smooth layer but in spherical deposits. For the Mg[B(hfip)<small><sub>4</sub></small>]<small><sub>2</sub></small> electrolyte, the influence of magnesium borohydride (Mg(BH<small><sub>4</sub></small>)<small><sub>2</sub></small>) as an additive was additionally tested, resulting in a more planar growth.</p>","PeriodicalId":101138,"journal":{"name":"RSC Applied Interfaces","volume":" 6","pages":" 1142-1155"},"PeriodicalIF":0.0,"publicationDate":"2024-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2024/lf/d4lf00124a?page=search","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142579307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Tomoya Otono, Hamdi Ben Yahia, Chie Hotehama, Kota Motohashi, Atsushi Sakuda and Akitoshi Hayashi
Sulfide solid electrolytes, known for their high ionic conductivity and formability, are key materials for the practical use of all-solid-state sodium batteries. In this study, new sulfide solid electrolyte materials, Na3−xZn1−xAl1+xS4 (x ≤ 0.2), were prepared via a self flux synthesis route, using reagents such as Na2S, Zn, Al, and S. The new materials were characterized using X-ray powder diffraction, Raman spectroscopy, and electrochemical impedance spectroscopy. Na3−xZn1−xAl1+xS4 formed a solid solution up to x = 0.2 and crystallized with a β-Ca3Ga2N4-type structure. As the Al content increased, the number of sodium vacancies also increased, resulting in improved ionic conductivity. Among Na3−xZn1−xAl1+xS4 samples, Na2.9Zn0.9Al1.1S4 exhibited the highest ionic conductivity of 4.5 × 10−6 S cm−1 at 25 °C and lowest activation energy of 32 kJ mol−1. Furthermore, the Na2.9Zn0.9Al1.1S4 phase was relatively stable when exposed to humid air, which facilitated its practical use in all-solid-state sodium batteries.
硫化物固态电解质以其高离子导电性和可成形性而著称,是全固态钠电池实际应用的关键材料。本研究使用 Na2S、Zn、Al 和 S 等试剂,通过自通量合成路线制备了新型硫化物固体电解质材料 Na3-xZn1-xAl1+xS4(x ≤ 0.2)。Na3-xZn1-xAl1+xS4 在 x = 0.2 以下形成固溶体,并结晶成 β-Ca3Ga2N4 型结构。随着铝含量的增加,钠空位的数量也随之增加,从而提高了离子导电性。在 Na3-xZn1-xAl1+xS4 样品中,Na2.9Zn0.9Al1.1S4 在 25 °C 时的离子电导率最高,为 4.5 × 10-6 S cm-1,活化能最低,为 32 kJ mol-1。此外,Na2.9Zn0.9Al1.1S4 相在潮湿空气中相对稳定,这有助于其在全固态钠电池中的实际应用。
{"title":"Preparation and characterization of new solid electrolytes Na3−xZn1−xAl1+xS4†","authors":"Tomoya Otono, Hamdi Ben Yahia, Chie Hotehama, Kota Motohashi, Atsushi Sakuda and Akitoshi Hayashi","doi":"10.1039/D4LF00275J","DOIUrl":"https://doi.org/10.1039/D4LF00275J","url":null,"abstract":"<p >Sulfide solid electrolytes, known for their high ionic conductivity and formability, are key materials for the practical use of all-solid-state sodium batteries. In this study, new sulfide solid electrolyte materials, Na<small><sub>3−<em>x</em></sub></small>Zn<small><sub>1−<em>x</em></sub></small>Al<small><sub>1+<em>x</em></sub></small>S<small><sub>4</sub></small> (<em>x</em> ≤ 0.2), were prepared <em>via</em> a self flux synthesis route, using reagents such as Na<small><sub>2</sub></small>S, Zn, Al, and S. The new materials were characterized using X-ray powder diffraction, Raman spectroscopy, and electrochemical impedance spectroscopy. Na<small><sub>3−<em>x</em></sub></small>Zn<small><sub>1−<em>x</em></sub></small>Al<small><sub>1+<em>x</em></sub></small>S<small><sub>4</sub></small> formed a solid solution up to <em>x</em> = 0.2 and crystallized with a β-Ca<small><sub>3</sub></small>Ga<small><sub>2</sub></small>N<small><sub>4</sub></small>-type structure. As the Al content increased, the number of sodium vacancies also increased, resulting in improved ionic conductivity. Among Na<small><sub>3−<em>x</em></sub></small>Zn<small><sub>1−<em>x</em></sub></small>Al<small><sub>1+<em>x</em></sub></small>S<small><sub>4</sub></small> samples, Na<small><sub>2.9</sub></small>Zn<small><sub>0.9</sub></small>Al<small><sub>1.1</sub></small>S<small><sub>4</sub></small> exhibited the highest ionic conductivity of 4.5 × 10<small><sup>−6</sup></small> S cm<small><sup>−1</sup></small> at 25 °C and lowest activation energy of 32 kJ mol<small><sup>−1</sup></small>. Furthermore, the Na<small><sub>2.9</sub></small>Zn<small><sub>0.9</sub></small>Al<small><sub>1.1</sub></small>S<small><sub>4</sub></small> phase was relatively stable when exposed to humid air, which facilitated its practical use in all-solid-state sodium batteries.</p>","PeriodicalId":101138,"journal":{"name":"RSC Applied Interfaces","volume":" 6","pages":" 1419-1425"},"PeriodicalIF":0.0,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2024/lf/d4lf00275j?page=search","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142579337","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Francelia Sanchez, Debabrata Das, Nathan Episcopo, Felicia S. Manciu, Susheng Tan, Vaithiyalingam Shutthanandan and C. V. Ramana
Gallium oxide (Ga2O3), which is one among the ultra-wide band gap materials, is promising for the next generation of electronic and optoelectronic devices due to its fascinating material properties for utilization in extreme environments. In this work, Ga2O3 films containing refractory tungsten (W) (GWO or Ga–W–O) were fabricated via pulsed laser deposition (PLD) by varying the oxygen partial pressure (pO2), which is the most important thermodynamic parameter that governs the growth, structure and properties of the resulting multi-component oxide films. The effect of variable pO2 on the structure, surface chemistry, chemical bonding, optical properties and photodetector device performance of the resulting Ga–W–O films was studied using X-ray photoelectron spectroscopy, Raman spectroscopy, atomic force microscopy, UV-vis spectroscopy, and photoluminescence spectroscopy measurements. The films containing Ga2O3 combined with W exhibited no secondary phase development. The impact of W on the chemical and optical characteristics of Ga2O3 films was found to be substantial. W5+ formation is prevalent when the adatom mobility is high at lower working pressure, whereas lower migration energy favors W6+ at higher working pressure. In contrast, the valance band maxima (VBM) of the films have a minor shift to higher energies with increasing pO2, confirming the dominance of O 2p states on VBM in PLD GWO films. Additionally, there is not much change in the optical band gap, but it shows a slight blue shift of the luminescence peak, directing a selective W incorporation into the Ga2O3 matrix. The processing conditions were optimized to demonstrate the excellent performance UV-photodetectors based on PLD GWO films. The structure–property correlation established will be useful in the production of W-alloyed β-Ga2O3 films with superior structural and optical properties for integration into optoelectronic and photonic device applications.
氧化镓(Ga2O3)是超宽带隙材料之一,由于其在极端环境中使用的迷人材料特性,有望用于下一代电子和光电设备。在这项研究中,通过改变氧分压(pO2),利用脉冲激光沉积(PLD)技术制备了含有难熔钨(W)的 Ga2O3 薄膜(GWO 或 Ga-W-O),氧分压是影响多组分氧化物薄膜的生长、结构和性能的最重要的热力学参数。利用 X 射线光电子能谱、拉曼光谱、原子力显微镜、紫外可见光谱和光致发光光谱测量,研究了改变 pO2 对生成的 Ga-W-O 薄膜的结构、表面化学、化学键、光学特性和光电探测器器件性能的影响。含有 Ga2O3 和 W 的薄膜没有出现次生相。研究发现,W 对 Ga2O3 薄膜的化学和光学特性有很大影响。在较低的工作压力下,当金刚原子迁移率较高时,W5+的形成很普遍,而在较高的工作压力下,较低的迁移能有利于 W6+的形成。与此相反,随着 pO2 的增加,薄膜的价带最大值(VBM)略微向更高能量移动,这证实了 O 2p 态在 PLD GWO 薄膜的 VBM 中占主导地位。此外,光带隙变化不大,但发光峰有轻微的蓝移,这表明 W 被选择性地掺入了 Ga2O3 基体中。对加工条件进行优化后,基于 PLD GWO 薄膜的 UV 光电探测器性能卓越。所建立的结构-性能相关性将有助于生产具有优异结构和光学性能的 W 合金 β-Ga2O3 薄膜,并将其集成到光电和光子器件应用中。
{"title":"Structure, surface/interface chemistry and optical properties of W-incorporated β-Ga2O3 films made by pulsed laser deposition","authors":"Francelia Sanchez, Debabrata Das, Nathan Episcopo, Felicia S. Manciu, Susheng Tan, Vaithiyalingam Shutthanandan and C. V. Ramana","doi":"10.1039/D4LF00257A","DOIUrl":"https://doi.org/10.1039/D4LF00257A","url":null,"abstract":"<p >Gallium oxide (Ga<small><sub>2</sub></small>O<small><sub>3</sub></small>), which is one among the ultra-wide band gap materials, is promising for the next generation of electronic and optoelectronic devices due to its fascinating material properties for utilization in extreme environments. In this work, Ga<small><sub>2</sub></small>O<small><sub>3</sub></small> films containing refractory tungsten (W) (GWO or Ga–W–O) were fabricated <em>via</em> pulsed laser deposition (PLD) by varying the oxygen partial pressure (<em>p</em>O<small><sub>2</sub></small>), which is the most important thermodynamic parameter that governs the growth, structure and properties of the resulting multi-component oxide films. The effect of variable <em>p</em>O<small><sub>2</sub></small> on the structure, surface chemistry, chemical bonding, optical properties and photodetector device performance of the resulting Ga–W–O films was studied using X-ray photoelectron spectroscopy, Raman spectroscopy, atomic force microscopy, UV-vis spectroscopy, and photoluminescence spectroscopy measurements. The films containing Ga<small><sub>2</sub></small>O<small><sub>3</sub></small> combined with W exhibited no secondary phase development. The impact of W on the chemical and optical characteristics of Ga<small><sub>2</sub></small>O<small><sub>3</sub></small> films was found to be substantial. W<small><sup>5+</sup></small> formation is prevalent when the adatom mobility is high at lower working pressure, whereas lower migration energy favors W<small><sup>6+</sup></small> at higher working pressure. In contrast, the valance band maxima (VBM) of the films have a minor shift to higher energies with increasing <em>p</em>O<small><sub>2</sub></small>, confirming the dominance of O 2p states on VBM in PLD GWO films. Additionally, there is not much change in the optical band gap, but it shows a slight blue shift of the luminescence peak, directing a selective W incorporation into the Ga<small><sub>2</sub></small>O<small><sub>3</sub></small> matrix. The processing conditions were optimized to demonstrate the excellent performance UV-photodetectors based on PLD GWO films. The structure–property correlation established will be useful in the production of W-alloyed β-Ga<small><sub>2</sub></small>O<small><sub>3</sub></small> films with superior structural and optical properties for integration into optoelectronic and photonic device applications.</p>","PeriodicalId":101138,"journal":{"name":"RSC Applied Interfaces","volume":" 6","pages":" 1395-1409"},"PeriodicalIF":0.0,"publicationDate":"2024-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2024/lf/d4lf00257a?page=search","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142579335","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yuan Zeng, Yu Xie, Andrea L. Rodarte, Tyler J. Dill and Andrea R. Tao
While quantum plasmonic behaviors benefit many applications in quantum optics and nanophotonics, they can have detrimental effects in optical processes such as surface-enhanced Raman spectroscopy (SERS). Here, we measure the SERS intensity for a colloidal metasurface composed of Ag nanocubes coupled to an ultra-flat Au backplane to characterize the classical, crossover, and quantum regimes of the metasurface as a function of gap distance. Gap distance is controlled via chemical modification of the nanocube and backplane surface with self-assembled monolayers composed of alkanethiols with varying chain lengths. Electrodynamic simulations employing a quantum-corrected model are used to characterize the hybrid plasmon modes and charge transfer plasmon modes of the metasurface with respect to gap distance. These results indicate the importance of charge transfer effects in dictating SERS intensities for even relatively large optical gap distances due to the presence of molecular analytes.
{"title":"Probing Raman enhancements for a colloidal metasurface with optical gap distances in the quantum regime†","authors":"Yuan Zeng, Yu Xie, Andrea L. Rodarte, Tyler J. Dill and Andrea R. Tao","doi":"10.1039/D4LF00127C","DOIUrl":"https://doi.org/10.1039/D4LF00127C","url":null,"abstract":"<p >While quantum plasmonic behaviors benefit many applications in quantum optics and nanophotonics, they can have detrimental effects in optical processes such as surface-enhanced Raman spectroscopy (SERS). Here, we measure the SERS intensity for a colloidal metasurface composed of Ag nanocubes coupled to an ultra-flat Au backplane to characterize the <em>classical</em>, <em>crossover</em>, and <em>quantum</em> regimes of the metasurface as a function of gap distance. Gap distance is controlled <em>via</em> chemical modification of the nanocube and backplane surface with self-assembled monolayers composed of alkanethiols with varying chain lengths. Electrodynamic simulations employing a quantum-corrected model are used to characterize the hybrid plasmon modes and charge transfer plasmon modes of the metasurface with respect to gap distance. These results indicate the importance of charge transfer effects in dictating SERS intensities for even relatively large optical gap distances due to the presence of molecular analytes.</p>","PeriodicalId":101138,"journal":{"name":"RSC Applied Interfaces","volume":" 6","pages":" 1410-1418"},"PeriodicalIF":0.0,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2024/lf/d4lf00127c?page=search","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142579336","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Riku Mizusaki, Shinsuke Maekawa, Takehiro Seshimo, Takahiro Dazai, Kazufumi Sato, Kan Hatakeyama-Sato, Yuta Nabae and Teruaki Hayakawa
We propose a facile and fast control method to obtain perpendicularly oriented microphase-separated structures in block copolymer (BCP) thin films for nanopatterning with a BCP lithography technique. By synthesizing a derivative of polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) with precisely introduced two hydroxy groups at the junction (PS-(OH)2-PMMA) and by applying it onto silicon substrates, we investigated the lamellar orientations in PS-(OH)2-PMMA thin films with respect to the annealing time of neutral layers (NLs) for modifying silicon substrates to neutralize the interfacial free energies between the substrate and each block component in the BCP thin films. Various NLs, including PS-(OH)2-PMMA itself, were applied onto silicon substrates, and PS-(OH)2-PMMA has turned out to take a dual role of BCP thin films for nanopatterning and NLs, which shows its supremacy over other methods. PS-(OH)2-PMMA needs only 20 minutes of annealing to form NLs that sufficiently neutralize the substrates and induce perpendicular lamellae, which is a significant improvement over non-functionalized PS-b-PMMA. This result highlights the enhanced adsorbability of BCP neutral layers by the introduction of only a small amount of hydroxy groups.
{"title":"Dual function of precisely modified hydroxy-PS-b-PMMA as neutral layers and thin films for perpendicularly oriented lamella†","authors":"Riku Mizusaki, Shinsuke Maekawa, Takehiro Seshimo, Takahiro Dazai, Kazufumi Sato, Kan Hatakeyama-Sato, Yuta Nabae and Teruaki Hayakawa","doi":"10.1039/D4LF00197D","DOIUrl":"https://doi.org/10.1039/D4LF00197D","url":null,"abstract":"<p >We propose a facile and fast control method to obtain perpendicularly oriented microphase-separated structures in block copolymer (BCP) thin films for nanopatterning with a BCP lithography technique. By synthesizing a derivative of polystyrene-<em>block</em>-poly(methyl methacrylate) (PS-<em>b</em>-PMMA) with precisely introduced two hydroxy groups at the junction (PS-(OH)<small><sub>2</sub></small>-PMMA) and by applying it onto silicon substrates, we investigated the lamellar orientations in PS-(OH)<small><sub>2</sub></small>-PMMA thin films with respect to the annealing time of neutral layers (NLs) for modifying silicon substrates to neutralize the interfacial free energies between the substrate and each block component in the BCP thin films. Various NLs, including PS-(OH)<small><sub>2</sub></small>-PMMA itself, were applied onto silicon substrates, and PS-(OH)<small><sub>2</sub></small>-PMMA has turned out to take a dual role of BCP thin films for nanopatterning and NLs, which shows its supremacy over other methods. PS-(OH)<small><sub>2</sub></small>-PMMA needs only 20 minutes of annealing to form NLs that sufficiently neutralize the substrates and induce perpendicular lamellae, which is a significant improvement over non-functionalized PS-<em>b</em>-PMMA. This result highlights the enhanced adsorbability of BCP neutral layers by the introduction of only a small amount of hydroxy groups.</p>","PeriodicalId":101138,"journal":{"name":"RSC Applied Interfaces","volume":" 1","pages":" 74-81"},"PeriodicalIF":0.0,"publicationDate":"2024-08-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2025/lf/d4lf00197d?page=search","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142994241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ranjana Venugopal, Anjitha Dinakaran, Meenu C. Nair, Arathy C. Balachandran, Nayan Dev Madhavan and Biswapriya Deb
Electrochromic devices (ECDs), which combine optical modulation and energy storage, have sparked widespread interest in window/façade applications and are becoming increasingly popular for energy conservation. It is established that by adjusting the electrochromic (EC) layer surface, the charge–discharge profile and the optical output can be individually regulated. Here, EC bilayers were created by overcoating MnO2 on both amorphous and crystalline WO3 thin films. The heterojunction considerably improved the cyclic stability and charge storage capacity of the WO3 electrode, without affecting the EC functions. The presence of the MnO2 layer has significantly enhanced both the areal capacitance and volumetric capacitance of the electrodes. The crystalline WO3 electrodes have a peak volumetric capacitance of 341 F cm−3 at 0.1 mA cm−2 discharge current, associated with an impressive retention rate of 50% even when charging at a higher rate of 1.0 mA cm−2. The ECDs exhibited outstanding visible and IR blocking capability of around 98% beyond 600 nm. A comprehensive study employing spectroscopy and electrochemistry was performed to examine the chemical and electrochemical effects of MnO2 overcoating. The results showed that these bilayers may be effectively employed to create EC energy storage devices (EESD) that are both highly stable and superior in performance.
电致变色装置(ECD)结合了光学调制和能量储存功能,在窗户/幕墙应用中引发了广泛的兴趣,在节能方面也越来越受欢迎。通过调整电致变色(EC)层表面,可以单独调节电荷-放电曲线和光学输出。在这里,通过在无定形和结晶 WO3 薄膜上包覆 MnO2,产生了双层电致变色层。异质结大大提高了 WO3 电极的循环稳定性和电荷存储容量,同时不影响导电率功能。二氧化锰层的存在显著提高了电极的面积电容和体积电容。晶体 WO3 电极在 0.1 mA cm-2 放电电流下的峰值体积电容为 341 F cm-3,即使在 1.0 mA cm-2 的较高速率下充电,其电容保持率也高达 50%。这种 ECD 具有出色的可见光和红外阻隔能力,600 纳米以上的阻隔率约为 98%。研究人员采用光谱学和电化学方法对 MnO2 涂层的化学和电化学效应进行了全面研究。研究结果表明,这些双层膜可有效地用于制造具有高度稳定性和卓越性能的电致发光储能器件(EESD)。
{"title":"Electrochromic properties of MnO2/WO3 bilayered electrodes for enhanced charge storage and superior stability†","authors":"Ranjana Venugopal, Anjitha Dinakaran, Meenu C. Nair, Arathy C. Balachandran, Nayan Dev Madhavan and Biswapriya Deb","doi":"10.1039/D4LF00198B","DOIUrl":"https://doi.org/10.1039/D4LF00198B","url":null,"abstract":"<p >Electrochromic devices (ECDs), which combine optical modulation and energy storage, have sparked widespread interest in window/façade applications and are becoming increasingly popular for energy conservation. It is established that by adjusting the electrochromic (EC) layer surface, the charge–discharge profile and the optical output can be individually regulated. Here, EC bilayers were created by overcoating MnO<small><sub>2</sub></small> on both amorphous and crystalline WO<small><sub>3</sub></small> thin films. The heterojunction considerably improved the cyclic stability and charge storage capacity of the WO<small><sub>3</sub></small> electrode, without affecting the EC functions. The presence of the MnO<small><sub>2</sub></small> layer has significantly enhanced both the areal capacitance and volumetric capacitance of the electrodes. The crystalline WO<small><sub>3</sub></small> electrodes have a peak volumetric capacitance of 341 F cm<small><sup>−3</sup></small> at 0.1 mA cm<small><sup>−2</sup></small> discharge current, associated with an impressive retention rate of 50% even when charging at a higher rate of 1.0 mA cm<small><sup>−2</sup></small>. The ECDs exhibited outstanding visible and IR blocking capability of around 98% beyond 600 nm. A comprehensive study employing spectroscopy and electrochemistry was performed to examine the chemical and electrochemical effects of MnO<small><sub>2</sub></small> overcoating. The results showed that these bilayers may be effectively employed to create EC energy storage devices (EESD) that are both highly stable and superior in performance.</p>","PeriodicalId":101138,"journal":{"name":"RSC Applied Interfaces","volume":" 6","pages":" 1382-1394"},"PeriodicalIF":0.0,"publicationDate":"2024-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2024/lf/d4lf00198b?page=search","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142579334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Annabelle M. K. Hadley, Sakshi Gautam and Byron D. Gates
Development of durable nanoscale electrocatalysts is an important step towards improving the affordability and sustainability of fuel cell technology. Nanostructured platinum catalysts are used to facilitate the two half reactions for hydrogen fuel cells. The sluggish kinetics of the cathodic oxygen reduction reaction and the less than optimal stability of cathode catalysts provide motivation for additional efforts to improve the catalytic performance of platinum. Metal oxide coatings on electrocatalysts have been found to increase durability of nanostructured catalysts and to impart additional properties such as increased activity and resistance to poisoning by contaminants. Niobium oxides have been studied as supporting materials for platinum fuel cell catalysts and shown to have a relatively high stability. It has also been suggested that niobium oxides can impart an increased activity due to strong metal support interactions. However, the lack of electrical conductivity of niobium pentoxide limits its viability as a support. Herein, coatings of niobium oxide were applied to nanotextured platinum catalysts prepared by electrodeposition against self-assembled templates to explore the impact of the coatings on the durability and electrocatalytic activity of the catalyst both during and after an accelerated stress test. The catalysts were characterized via scanning electron microscopy, X-ray photoelectron spectroscopy, conductive atomic force microscopy, and electrochemical techniques. Increasing the thickness of the coating from ∼0.5 nm to ∼4.5 nm was found to preserve the initial nanostructured morphology of the electrodeposited platinum catalyst. The thicker coatings did, however, result in larger charge transfer resistances towards the oxygen reduction reaction. These studies provide further evidence of the utility of ultrathin coatings to improve the properties of nanostructured electrocatalysts.
{"title":"Niobium oxide coatings on nanostructured platinum electrocatalysts: benefits and limitations†","authors":"Annabelle M. K. Hadley, Sakshi Gautam and Byron D. Gates","doi":"10.1039/D4LF00211C","DOIUrl":"https://doi.org/10.1039/D4LF00211C","url":null,"abstract":"<p >Development of durable nanoscale electrocatalysts is an important step towards improving the affordability and sustainability of fuel cell technology. Nanostructured platinum catalysts are used to facilitate the two half reactions for hydrogen fuel cells. The sluggish kinetics of the cathodic oxygen reduction reaction and the less than optimal stability of cathode catalysts provide motivation for additional efforts to improve the catalytic performance of platinum. Metal oxide coatings on electrocatalysts have been found to increase durability of nanostructured catalysts and to impart additional properties such as increased activity and resistance to poisoning by contaminants. Niobium oxides have been studied as supporting materials for platinum fuel cell catalysts and shown to have a relatively high stability. It has also been suggested that niobium oxides can impart an increased activity due to strong metal support interactions. However, the lack of electrical conductivity of niobium pentoxide limits its viability as a support. Herein, coatings of niobium oxide were applied to nanotextured platinum catalysts prepared by electrodeposition against self-assembled templates to explore the impact of the coatings on the durability and electrocatalytic activity of the catalyst both during and after an accelerated stress test. The catalysts were characterized <em>via</em> scanning electron microscopy, X-ray photoelectron spectroscopy, conductive atomic force microscopy, and electrochemical techniques. Increasing the thickness of the coating from ∼0.5 nm to ∼4.5 nm was found to preserve the initial nanostructured morphology of the electrodeposited platinum catalyst. The thicker coatings did, however, result in larger charge transfer resistances towards the oxygen reduction reaction. These studies provide further evidence of the utility of ultrathin coatings to improve the properties of nanostructured electrocatalysts.</p>","PeriodicalId":101138,"journal":{"name":"RSC Applied Interfaces","volume":" 6","pages":" 1334-1347"},"PeriodicalIF":0.0,"publicationDate":"2024-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2024/lf/d4lf00211c?page=search","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142579329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Matthew E. Potter, Evangeline B. McShane, Nienke L. Visser, Johannes D. Meeldijk, Lisa J. Allen, Stephen M. King, Marina Carravetta, Petra E. de Jongh, Bart D. Vandegehuchte and Robert Raja
Microporous solid acid catalysts offer a vast amount of control over chemical processes. However, their coveted smaller pores also have several drawbacks, including a limited substrate scope, faster deactivation, and pore blockage. As such, there are significant advantages to introducing mesopores alongside the microporous framework, to create hierarchically porous frameworks. This work explores the influence of adapting our microporous synthetic procedure for silicoaluminophosphate (SAPO-5) to include different shaped carbon nanotemplates. The differing size of the mesopores formed is explored using nitrogen physisorption, transmission electron microscopy and small angle neutron scattering. In this work, we uniquely use small angle neutron scattering for probing hierarchical silicoaluminophosphates synthesised with hard templating methods. Here small angle neutron scattering was able to probe the shape and size of the mesopores and link their accessibility to their catalytic performance.
{"title":"Exploring the influence of mesoporosity in hard carbon-templated hierarchical SAPO-5 for ethanol dehydration†","authors":"Matthew E. Potter, Evangeline B. McShane, Nienke L. Visser, Johannes D. Meeldijk, Lisa J. Allen, Stephen M. King, Marina Carravetta, Petra E. de Jongh, Bart D. Vandegehuchte and Robert Raja","doi":"10.1039/D4LF00230J","DOIUrl":"https://doi.org/10.1039/D4LF00230J","url":null,"abstract":"<p >Microporous solid acid catalysts offer a vast amount of control over chemical processes. However, their coveted smaller pores also have several drawbacks, including a limited substrate scope, faster deactivation, and pore blockage. As such, there are significant advantages to introducing mesopores alongside the microporous framework, to create hierarchically porous frameworks. This work explores the influence of adapting our microporous synthetic procedure for silicoaluminophosphate (SAPO-5) to include different shaped carbon nanotemplates. The differing size of the mesopores formed is explored using nitrogen physisorption, transmission electron microscopy and small angle neutron scattering. In this work, we uniquely use small angle neutron scattering for probing hierarchical silicoaluminophosphates synthesised with hard templating methods. Here small angle neutron scattering was able to probe the shape and size of the mesopores and link their accessibility to their catalytic performance.</p>","PeriodicalId":101138,"journal":{"name":"RSC Applied Interfaces","volume":" 6","pages":" 1360-1370"},"PeriodicalIF":0.0,"publicationDate":"2024-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2024/lf/d4lf00230j?page=search","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142579327","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jin Quan Ng, Qingyun Wu, Yee Sin Ang and L. K. Ang
Using van der Waals heterostructures (VDWHs) to engineer novel electronic properties of two-dimensional (2D) material systems has proven to be a viable strategy in recent years. Given the excellent mechanical and electronic properties of air-stable MoSi2N4 and the high electron mobility of air-sensitive wide band gap 2D monolayers of GaSe and InSe, we investigate the interaction of these materials using first-principles calculations. We find that the VDWHs have narrow type-II direct band gaps. We apply either vertical electric field, vertical strain or biaxial strain to MoSi2N4/GaSe and MoSi2N4/InSe for band gap modulation. We find that the band structure of MoSi2N4/GaSe and MoSi2N4/InSe is highly tunable, exhibiting a variety of behaviours such as type-II-to-type-H band alignment, large band gap changes and direct-to-indirect band gap transitions. Interestingly, we also find that both heterostructures have a large band gap modulation of 1.4 to 2.3 eV under 8% biaxial strain. We also find that we can reverse the direction of the electron transfer between the monolayers under external stimuli. These findings therefore reveal another viable path towards InSe and GaSe based electronics and optoelectronics by using MoSi2N4-based VDWHs.
近年来,利用范德华异质结构(VDWHs)来设计二维(2D)材料系统的新型电子特性已被证明是一种可行的策略。鉴于空气稳定的 MoSi2N4 具有优异的机械和电子特性,以及 GaSe 和 InSe 的空气敏感宽带隙二维单层材料具有高电子迁移率,我们利用第一原理计算研究了这些材料的相互作用。我们发现 VDWHs 具有窄的 II 型直接带隙。我们对 MoSi2N4/GaSe 和 MoSi2N4/InSe 施加垂直电场、垂直应变或双轴应变,以实现带隙调制。我们发现,MoSi2N4/GaSe 和 MoSi2N4/InSe 的能带结构具有很高的可调性,表现出多种行为,如 II 型能带到 H 型能带的排列、较大的能带间隙变化以及直接到间接的能带间隙转变。有趣的是,我们还发现这两种异质结构在 8%的双轴应变作用下都有 1.4 至 2.3 eV 的较大带隙调制。我们还发现,在外部刺激下,单层之间的电子转移方向可以逆转。因此,这些发现揭示了利用基于 MoSi2N4 的 VDWHs 实现基于 InSe 和 GaSe 的电子和光电技术的另一条可行途径。
{"title":"Electric field and strain tunable band gap and band alignments of MoSi2N4/MSe (M = In, Ga) van der Waals heterostructures†","authors":"Jin Quan Ng, Qingyun Wu, Yee Sin Ang and L. K. Ang","doi":"10.1039/D4LF00239C","DOIUrl":"https://doi.org/10.1039/D4LF00239C","url":null,"abstract":"<p >Using van der Waals heterostructures (VDWHs) to engineer novel electronic properties of two-dimensional (2D) material systems has proven to be a viable strategy in recent years. Given the excellent mechanical and electronic properties of air-stable MoSi<small><sub>2</sub></small>N<small><sub>4</sub></small> and the high electron mobility of air-sensitive wide band gap 2D monolayers of GaSe and InSe, we investigate the interaction of these materials using first-principles calculations. We find that the VDWHs have narrow type-II direct band gaps. We apply either vertical electric field, vertical strain or biaxial strain to MoSi<small><sub>2</sub></small>N<small><sub>4</sub></small>/GaSe and MoSi<small><sub>2</sub></small>N<small><sub>4</sub></small>/InSe for band gap modulation. We find that the band structure of MoSi<small><sub>2</sub></small>N<small><sub>4</sub></small>/GaSe and MoSi<small><sub>2</sub></small>N<small><sub>4</sub></small>/InSe is highly tunable, exhibiting a variety of behaviours such as type-II-to-type-H band alignment, large band gap changes and direct-to-indirect band gap transitions. Interestingly, we also find that both heterostructures have a large band gap modulation of 1.4 to 2.3 eV under 8% biaxial strain. We also find that we can reverse the direction of the electron transfer between the monolayers under external stimuli. These findings therefore reveal another viable path towards InSe and GaSe based electronics and optoelectronics by using MoSi<small><sub>2</sub></small>N<small><sub>4</sub></small>-based VDWHs.</p>","PeriodicalId":101138,"journal":{"name":"RSC Applied Interfaces","volume":" 6","pages":" 1156-1165"},"PeriodicalIF":0.0,"publicationDate":"2024-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2024/lf/d4lf00239c?page=search","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142579308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Partha Sarathi Padhi, Sanjay K. Rai, R. S. Ajimsha and Pankaj Misra
The Al2O3/TiO2 nanolaminates (ATA NLs), with the dominant Maxwell–Wagner interfacial polarization, have been extensively explored in last decade due to their potential for new-generation energy storage applications. Here, we report the fabrication of device-grade sub-nanometric (<1 nm) ATA NLs using an optimized pulsed laser deposition technique, where the interface-confined carrier relaxation and sublayer conductivity contrast-induced Maxwell–Wagner interfacial polarization mechanism was engineered by precisely tailoring the individual Al2O3 and TiO2 sublayer thickness along with the top-bottom capping layer thickness. The formation of oxygen vacancy-generated carriers in reduced titania sublayers across Al2O3/TiO2 heterointerfaces and their relative response towards the applied field were responsible for both charge storage and leakage. An NL with a TiO2 and Al2O3 sublayer thickness of ∼1 and 0.6 nm, respectively, sandwiched between ∼3 nm Al2O3 barrier layers, has demonstrated an improved capacitance density of ∼33.1 fF μm−2 and a high cut-off frequency up to ∼0.5 MHz, along with a low dielectric loss of ∼0.032 and a reduced leakage current density of ∼3.08 × 10−7 A cm−2 at 1 V. The calculated energy density value of ∼4.6 J cm−3 achieved with this optimized subnanometric Al2O3/TiO2 laminate is comparable to those of state-of-the-art capacitive devices. These superior electrical properties and controllable dielectric relaxation make this laminate a promising high-k and low-loss dielectric material for next-generation nano-electronics and high-density energy storage capacitors.
{"title":"Engineering Maxwell–Wagner relaxation and interface carrier confinement in Al2O3/TiO2 subnanometric laminates for high-density energy storage applications†","authors":"Partha Sarathi Padhi, Sanjay K. Rai, R. S. Ajimsha and Pankaj Misra","doi":"10.1039/D4LF00125G","DOIUrl":"https://doi.org/10.1039/D4LF00125G","url":null,"abstract":"<p >The Al<small><sub>2</sub></small>O<small><sub>3</sub></small>/TiO<small><sub>2</sub></small> nanolaminates (ATA NLs), with the dominant Maxwell–Wagner interfacial polarization, have been extensively explored in last decade due to their potential for new-generation energy storage applications. Here, we report the fabrication of device-grade sub-nanometric (<1 nm) ATA NLs using an optimized pulsed laser deposition technique, where the interface-confined carrier relaxation and sublayer conductivity contrast-induced Maxwell–Wagner interfacial polarization mechanism was engineered by precisely tailoring the individual Al<small><sub>2</sub></small>O<small><sub>3</sub></small> and TiO<small><sub>2</sub></small> sublayer thickness along with the top-bottom capping layer thickness. The formation of oxygen vacancy-generated carriers in reduced titania sublayers across Al<small><sub>2</sub></small>O<small><sub>3</sub></small>/TiO<small><sub>2</sub></small> heterointerfaces and their relative response towards the applied field were responsible for both charge storage and leakage. An NL with a TiO<small><sub>2</sub></small> and Al<small><sub>2</sub></small>O<small><sub>3</sub></small> sublayer thickness of ∼1 and 0.6 nm, respectively, sandwiched between ∼3 nm Al<small><sub>2</sub></small>O<small><sub>3</sub></small> barrier layers, has demonstrated an improved capacitance density of ∼33.1 fF μm<small><sup>−2</sup></small> and a high cut-off frequency up to ∼0.5 MHz, along with a low dielectric loss of ∼0.032 and a reduced leakage current density of ∼3.08 × 10<small><sup>−7</sup></small> A cm<small><sup>−2</sup></small> at 1 V. The calculated energy density value of ∼4.6 J cm<small><sup>−3</sup></small> achieved with this optimized subnanometric Al<small><sub>2</sub></small>O<small><sub>3</sub></small>/TiO<small><sub>2</sub></small> laminate is comparable to those of state-of-the-art capacitive devices. These superior electrical properties and controllable dielectric relaxation make this laminate a promising high-<em>k</em> and low-loss dielectric material for next-generation nano-electronics and high-density energy storage capacitors.</p>","PeriodicalId":101138,"journal":{"name":"RSC Applied Interfaces","volume":" 6","pages":" 1348-1359"},"PeriodicalIF":0.0,"publicationDate":"2024-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2024/lf/d4lf00125g?page=search","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142579332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}