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The Role of Electron-Hole Interaction in the Cooling Process of Highly Excited Carriers 电子-空穴相互作用在高激发载流子冷却过程中的作用
Pub Date : 1984-12-31 DOI: 10.1515/9783112495261-021
M. Asche, O. G. Sarbeǐ
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引用次数: 0
Connection of the Defect Volumes to the Bulk Properties in CaF2 CaF2中缺陷卷与体积特性的联系
Pub Date : 1984-12-31 DOI: 10.1515/9783112495261-041
M. Lazaridou
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引用次数: 0
Sample-Dependent Luminescence Spectra in Highly Photoexcited CdS and CdSe 高光激发CdS和CdSe的样品依赖发光光谱
Pub Date : 1984-12-31 DOI: 10.1515/9783112495261-044
R. Baltramiejūnas, I. Rückmann, G. Tamulaitis, A. Žukauskas
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引用次数: 0
Electronic Structure of V3Si and V3Ge V3Si和V3Ge的电子结构
Pub Date : 1984-12-31 DOI: 10.1515/9783112495261-016
A. Skripov, A. Stepanov
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引用次数: 0
The Parisi-Sompolinsky Solution for an Infinite-Ranged Spin Glass Model with m-Component Spins 具有m分量自旋的无限范围自旋玻璃模型的paris - sompolinsky解
Pub Date : 1984-12-31 DOI: 10.1515/9783112495261-014
A. Goltsev
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引用次数: 0
Ideal Vacancy States in Si 硅的理想空位态
Pub Date : 1984-12-31 DOI: 10.1515/9783112495261-028
Ç. Tuncay, M. Tomak
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引用次数: 0
On the Theory oi Ion-Induced Electron Emission 离子诱导电子发射理论研究
Pub Date : 1984-12-31 DOI: 10.1515/9783112495261-023
M. Rösler, W. Brauer
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引用次数: 0
Erratum to: Temperature Dependence of the Energy Gap of an Anisotropic Heisenberg Ferromagnetic Model 各向异性海森堡铁磁模型能隙的温度依赖性勘误
Pub Date : 1984-12-31 DOI: 10.1515/9783112495261-052
D. Kapor, J. Šetrajčić, M. Škrinjaŕ
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引用次数: 0
Charge Transfer and Electron-Molecular Vibration Coupling in Tetramerized Quasi-ID Semiconductors 四聚化准id半导体中的电荷转移和电子-分子振动耦合
Pub Date : 1984-12-31 DOI: 10.1515/9783112495261-010
V. Yartsev
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引用次数: 0
Partial Structure Factors and Self-Diffusion in Liquid Copper-Lead Alloys 液态铜铅合金的局部结构因素与自扩散
Pub Date : 1984-12-31 DOI: 10.1515/9783112495261-003
S. Palchaudhuri, R. Joarder, R. V. Gopala Rao
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引用次数: 0
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