Pub Date : 2021-09-13DOI: 10.1109/ucmmt53364.2021.9569910
D. Prakash, Marcos Martínez Argudo, D. W. van der Weide, F. Cavallo
Self-assembly of metal nanomembranes is presented as a viable avenue to fabricate helical slow-wave structures for millimeter-through- THz traveling wave tube amplifiers. The work coordinates three-dimensional simulations of cold helices and one-dimensional models of beam-wave interaction to determine a useful range of design parameters for the slow-wave structures. These parameters include diameter and pitch. Based on the simulation results, we fabricate prototype helices with microscale diameter and pitch. The nanomembrane stiffness and the built-in stress control the geometry of the helices.
{"title":"Design and Fabrication of Self-Assembled Metal Helices for Millimeter-through- THz Traveling Wave Tube Amplifiers","authors":"D. Prakash, Marcos Martínez Argudo, D. W. van der Weide, F. Cavallo","doi":"10.1109/ucmmt53364.2021.9569910","DOIUrl":"https://doi.org/10.1109/ucmmt53364.2021.9569910","url":null,"abstract":"Self-assembly of metal nanomembranes is presented as a viable avenue to fabricate helical slow-wave structures for millimeter-through- THz traveling wave tube amplifiers. The work coordinates three-dimensional simulations of cold helices and one-dimensional models of beam-wave interaction to determine a useful range of design parameters for the slow-wave structures. These parameters include diameter and pitch. Based on the simulation results, we fabricate prototype helices with microscale diameter and pitch. The nanomembrane stiffness and the built-in stress control the geometry of the helices.","PeriodicalId":117712,"journal":{"name":"2021 14th UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies (UCMMT)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121481656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-09-13DOI: 10.1109/ucmmt53364.2021.9569913
Jiaming Hao, Ningning Yan, Yu Luo, Kaixue Ma
A high gain differential-feed stacked-patch antenna based on substrate integrated suspended line (SISL) is proposed in this paper. The antenna consists of five substrate layers with two internal air cavities. By etching slots on the driven patch and adding the stacked patch, the simulation results of the antenna can cover the operating band of 26.22-30.14 GHz. The realized gain of the operating band is within 10.76-12.52 dBi. The cross-polarization is less than −45 dBi, and the antenna efficiency is higher than 82 %.
{"title":"A High Gain Differential-Feed Stacked-Patch Antenna Based on SISL for 5G Millimeter-Wave Applications","authors":"Jiaming Hao, Ningning Yan, Yu Luo, Kaixue Ma","doi":"10.1109/ucmmt53364.2021.9569913","DOIUrl":"https://doi.org/10.1109/ucmmt53364.2021.9569913","url":null,"abstract":"A high gain differential-feed stacked-patch antenna based on substrate integrated suspended line (SISL) is proposed in this paper. The antenna consists of five substrate layers with two internal air cavities. By etching slots on the driven patch and adding the stacked patch, the simulation results of the antenna can cover the operating band of 26.22-30.14 GHz. The realized gain of the operating band is within 10.76-12.52 dBi. The cross-polarization is less than −45 dBi, and the antenna efficiency is higher than 82 %.","PeriodicalId":117712,"journal":{"name":"2021 14th UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies (UCMMT)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124535717","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper presents a 30-to-40 GHz 2-stage power amplifier (PA) for 5G applications. Transformers are used to achieve a broad input, output and interstage matching while occupying a compact size. The neutralization technique is used to boost the power gain and improve stability of PA. According to the simulation results, the power amplifier achieves an output 1dB compression point (OP1dB) of 14.9 dBm and a saturated output power of 17.4 dBm with a peak power added efficiency (PAE) of 39% at 35 GHz. The gain is larger than 30 dB from 30–40 GHz. Implemented in a 0.13-µm SiGe BiCMOS process, the overall chip size is 0.46 mm2 including all RF and DC pads.
{"title":"A Ka-band 2-Stage Transformer-Coupled Power Amplifier in 0.13-µm SiGe BiCMOS Technology","authors":"Ling Li, Kenan Xie, Tongxuan Zhou, Haitang Dong, Hao Zhang, Keping Wang","doi":"10.1109/ucmmt53364.2021.9569869","DOIUrl":"https://doi.org/10.1109/ucmmt53364.2021.9569869","url":null,"abstract":"This paper presents a 30-to-40 GHz 2-stage power amplifier (PA) for 5G applications. Transformers are used to achieve a broad input, output and interstage matching while occupying a compact size. The neutralization technique is used to boost the power gain and improve stability of PA. According to the simulation results, the power amplifier achieves an output 1dB compression point (OP1dB) of 14.9 dBm and a saturated output power of 17.4 dBm with a peak power added efficiency (PAE) of 39% at 35 GHz. The gain is larger than 30 dB from 30–40 GHz. Implemented in a 0.13-µm SiGe BiCMOS process, the overall chip size is 0.46 mm2 including all RF and DC pads.","PeriodicalId":117712,"journal":{"name":"2021 14th UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies (UCMMT)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133663603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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