Pub Date : 2009-12-14DOI: 10.1109/AEMC.2009.5430691
R. Sujith, V. Deepu, D. Laila, S. Mridula, P. Mohanan
This paper presents the design and development of a compact CPW fed quad band antenna. This low profile antenna has a dimension of 32mm×31mm when printed on a substrate of dielectric constant 4.4 and height 1.6mm. The antenna covers GSM 900, DCS 1800, IEEE802.11.a, IEEE802.11.b and HiperLAN2 bands. The antenna exhibits good radiation characteristics with moderate gain.
{"title":"CPW-fed quad-band antenna for compact wireless application","authors":"R. Sujith, V. Deepu, D. Laila, S. Mridula, P. Mohanan","doi":"10.1109/AEMC.2009.5430691","DOIUrl":"https://doi.org/10.1109/AEMC.2009.5430691","url":null,"abstract":"This paper presents the design and development of a compact CPW fed quad band antenna. This low profile antenna has a dimension of 32mm×31mm when printed on a substrate of dielectric constant 4.4 and height 1.6mm. The antenna covers GSM 900, DCS 1800, IEEE802.11.a, IEEE802.11.b and HiperLAN2 bands. The antenna exhibits good radiation characteristics with moderate gain.","PeriodicalId":127199,"journal":{"name":"2009 Applied Electromagnetics Conference (AEMC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121192225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/AEMC.2009.5430674
S. Chattopadhyay, J. Siddiqui, D. Guha
A rectangular microstrip patch on air and composite (air-PTFE) substrate is theoretically and experimentally investigated and compared with conventional microstrip patch. Around 2–3 dB improvement in peak gain along with broad beam radiation pattern is demonstrated. Both experimental and simulated results are presented.
{"title":"Rectangular patch on air and air-dielectric composite substrates to achieve improved radiation characteristics","authors":"S. Chattopadhyay, J. Siddiqui, D. Guha","doi":"10.1109/AEMC.2009.5430674","DOIUrl":"https://doi.org/10.1109/AEMC.2009.5430674","url":null,"abstract":"A rectangular microstrip patch on air and composite (air-PTFE) substrate is theoretically and experimentally investigated and compared with conventional microstrip patch. Around 2–3 dB improvement in peak gain along with broad beam radiation pattern is demonstrated. Both experimental and simulated results are presented.","PeriodicalId":127199,"journal":{"name":"2009 Applied Electromagnetics Conference (AEMC)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127468158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/AEMC.2009.5430571
D. Das, A. Maitra
A new model is presented to predict rain rate serially during a rain event at a tropical location. The model is based on the Gaussian distribution of the conditional occurrence of rain rate with a particular value of the rain rate occurring before. The mean and standard deviation of the distribution are modeled with the measured data. The rain rate at a particular time instant is predicted from the knowledge of previous samples. The predictor has tested well with a mean error within 10% for rain rates above 20 mm/hr for 10 sec time interval. The same technique is also successfully applied to predict time series of rain attenuation. The practical application of channel predictor is also shown in this paper for FMT simulation.
{"title":"Development of channel model to predict rain rate and attenuation for FMT applications","authors":"D. Das, A. Maitra","doi":"10.1109/AEMC.2009.5430571","DOIUrl":"https://doi.org/10.1109/AEMC.2009.5430571","url":null,"abstract":"A new model is presented to predict rain rate serially during a rain event at a tropical location. The model is based on the Gaussian distribution of the conditional occurrence of rain rate with a particular value of the rain rate occurring before. The mean and standard deviation of the distribution are modeled with the measured data. The rain rate at a particular time instant is predicted from the knowledge of previous samples. The predictor has tested well with a mean error within 10% for rain rates above 20 mm/hr for 10 sec time interval. The same technique is also successfully applied to predict time series of rain attenuation. The practical application of channel predictor is also shown in this paper for FMT simulation.","PeriodicalId":127199,"journal":{"name":"2009 Applied Electromagnetics Conference (AEMC)","volume":"34 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125870818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/AEMC.2009.5430712
N. K. Saxena, N. Kumar, P. Pourush
Radar cross sections (RCS) of rectangular, circular and triangular microstrip patch antennas are presented which are printed on LiTi ferrite substrate in X-band (8-12 GHz) region. In this paper, we precise the preparation of a polycrystalline LiTi ferrite of 2200 Gauss saturation magnetization. The comparison of RCS patterns among RPMA, CPMA and TPMA shows the affective study of radar cross section which differentiates the stealth capacity as well as miniaturization due to the ferrite substrate application.
{"title":"Study and comparison of RCS of microstrip patch antennas on LiTi-ferrite substrate","authors":"N. K. Saxena, N. Kumar, P. Pourush","doi":"10.1109/AEMC.2009.5430712","DOIUrl":"https://doi.org/10.1109/AEMC.2009.5430712","url":null,"abstract":"Radar cross sections (RCS) of rectangular, circular and triangular microstrip patch antennas are presented which are printed on LiTi ferrite substrate in X-band (8-12 GHz) region. In this paper, we precise the preparation of a polycrystalline LiTi ferrite of 2200 Gauss saturation magnetization. The comparison of RCS patterns among RPMA, CPMA and TPMA shows the affective study of radar cross section which differentiates the stealth capacity as well as miniaturization due to the ferrite substrate application.","PeriodicalId":127199,"journal":{"name":"2009 Applied Electromagnetics Conference (AEMC)","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123276401","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/AEMC.2009.5430665
A. De, T. Sarkar, M. Salazar-Palma
In this paper we study the far-field behavior of a vertically oriented antenna above imperfectly conducting ground. The goal of this paper is to show that when an antenna in placed on the ground, the radiation pattern of the antenna has multiple peaks and nulls which increases with the height of the antenna above ground. The far-field as a result starts at a distance proportional to the height of the antenna above ground plane which is further away than the far-field of the isolated antenna in free space. The concept of height-gain and its misleading interpretation is also discussed.
{"title":"Near-field and far-field behavior of the field radiated by a vertically oriented dipole antenna above imperfectly conducting earth","authors":"A. De, T. Sarkar, M. Salazar-Palma","doi":"10.1109/AEMC.2009.5430665","DOIUrl":"https://doi.org/10.1109/AEMC.2009.5430665","url":null,"abstract":"In this paper we study the far-field behavior of a vertically oriented antenna above imperfectly conducting ground. The goal of this paper is to show that when an antenna in placed on the ground, the radiation pattern of the antenna has multiple peaks and nulls which increases with the height of the antenna above ground. The far-field as a result starts at a distance proportional to the height of the antenna above ground plane which is further away than the far-field of the isolated antenna in free space. The concept of height-gain and its misleading interpretation is also discussed.","PeriodicalId":127199,"journal":{"name":"2009 Applied Electromagnetics Conference (AEMC)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115331661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/AEMC.2009.5430682
P. Selvan, S. Raghavan
A novel design of spiral strip monopole antenna fed by a coplanar waveguide (CPW) for radio frequency identification (RFID) applications is presented. The designed antenna, which, including the FR-4 substrate is, only 16.5 mm in length and 20 mm in width, can operate at the frequency of 5.798 GHz and 4.15 dBi gain, respectively. This antenna is suitable for radio frequency identification applications in the 5.8 GHz band. The fundamental parameters of the antenna such as return loss, VSWR, gain and polarization which meets the acceptable antenna standards are obtained. Simulation tool, based on the method of moments (ZELAND IE3D version 12.0) has been used to analyze and optimize the antenna. These properties with compact and uniplanar structure make the antenna suitable for use as RFID tags.
提出了一种用于射频识别(RFID)的新型共面波导馈电螺旋单极天线。设计的天线，包括FR-4衬底，长仅16.5 mm，宽仅20 mm，工作频率分别为5.798 GHz，增益为4.15 dBi。该天线适用于5.8 GHz频段的射频识别应用。得到了天线的回波损耗、驻波比、增益和极化等基本参数，满足天线可接受标准。利用基于矩量法的仿真工具(ZELAND IE3D version 12.0)对天线进行了分析和优化。该天线具有紧凑的单平面结构，适合用作RFID标签。
{"title":"CPW - fed folded spiral strip monopole slot antenna for 5.8 GHz RFID application","authors":"P. Selvan, S. Raghavan","doi":"10.1109/AEMC.2009.5430682","DOIUrl":"https://doi.org/10.1109/AEMC.2009.5430682","url":null,"abstract":"A novel design of spiral strip monopole antenna fed by a coplanar waveguide (CPW) for radio frequency identification (RFID) applications is presented. The designed antenna, which, including the FR-4 substrate is, only 16.5 mm in length and 20 mm in width, can operate at the frequency of 5.798 GHz and 4.15 dBi gain, respectively. This antenna is suitable for radio frequency identification applications in the 5.8 GHz band. The fundamental parameters of the antenna such as return loss, VSWR, gain and polarization which meets the acceptable antenna standards are obtained. Simulation tool, based on the method of moments (ZELAND IE3D version 12.0) has been used to analyze and optimize the antenna. These properties with compact and uniplanar structure make the antenna suitable for use as RFID tags.","PeriodicalId":127199,"journal":{"name":"2009 Applied Electromagnetics Conference (AEMC)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122358076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/AEMC.2009.5430608
J. Panda, R. S. Kshetrimayum
Design of a simple microstrip fed monopole patch antenna for the radio frequency identification (RFID) is presented. The antenna has two different resonant paths (forming an inverted double L-shaped structure), supports two resonances around 2.41 GHz and 5.85 GHz, which are reserved for RFID applications. Effectively consistent radiation pattern and large impedance bandwidth has been observed. Impedance bandwidth for −10 dB return loss in the 2.41 GHz and 5.85 GHz center frequency reaches 0.97 GHz (1.95 GHz to 2.92 GHz) and 1.51 GHz (5.23 GHz to 6.74 GHz) respectively.
{"title":"A printed inverted double L-shaped dual-band monopole antenna for RFID applications","authors":"J. Panda, R. S. Kshetrimayum","doi":"10.1109/AEMC.2009.5430608","DOIUrl":"https://doi.org/10.1109/AEMC.2009.5430608","url":null,"abstract":"Design of a simple microstrip fed monopole patch antenna for the radio frequency identification (RFID) is presented. The antenna has two different resonant paths (forming an inverted double L-shaped structure), supports two resonances around 2.41 GHz and 5.85 GHz, which are reserved for RFID applications. Effectively consistent radiation pattern and large impedance bandwidth has been observed. Impedance bandwidth for −10 dB return loss in the 2.41 GHz and 5.85 GHz center frequency reaches 0.97 GHz (1.95 GHz to 2.92 GHz) and 1.51 GHz (5.23 GHz to 6.74 GHz) respectively.","PeriodicalId":127199,"journal":{"name":"2009 Applied Electromagnetics Conference (AEMC)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116606170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/AEMC.2009.5430697
Senthil Kumar, Priyesh, Hema Singh, R. Jha
The spherical antenna array is a preferred choice for the applications where wide angle scanning is desired. The Dolph-Chebyshev method for beampattern design provides a minimum null-to-null beamwidth for a given sidelobe level. This distribution has direct control over the main-lobe width and maximum sidelobe level. In this paper, an attempt is made to generate radiation pattern of spherical antenna array using Dolph-Chebyshev's amplitude distribution. The amplitude excitations are obtained by exploiting the similarity of Legendre polynomials, used for beampattern of spherical array and Chebyshev polynomials, used for Dolph-Chebyshev pattern.
{"title":"Radiation pattern of spherical phased antenna array with Dolph-Chebyshev's aperture distribution","authors":"Senthil Kumar, Priyesh, Hema Singh, R. Jha","doi":"10.1109/AEMC.2009.5430697","DOIUrl":"https://doi.org/10.1109/AEMC.2009.5430697","url":null,"abstract":"The spherical antenna array is a preferred choice for the applications where wide angle scanning is desired. The Dolph-Chebyshev method for beampattern design provides a minimum null-to-null beamwidth for a given sidelobe level. This distribution has direct control over the main-lobe width and maximum sidelobe level. In this paper, an attempt is made to generate radiation pattern of spherical antenna array using Dolph-Chebyshev's amplitude distribution. The amplitude excitations are obtained by exploiting the similarity of Legendre polynomials, used for beampattern of spherical array and Chebyshev polynomials, used for Dolph-Chebyshev pattern.","PeriodicalId":127199,"journal":{"name":"2009 Applied Electromagnetics Conference (AEMC)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130322704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/AEMC.2009.5430597
A. Tidar, Sayyad Shafiyoddin, S. Kamble, G. Dharne, S. Patil, P. Khirade, S. Mehrotra
Dielectric relaxation measurement of 1-Hexanol (1-HE), 1-Propenol (1-PR) & their complex have been carried out over the entire concentration range using time domain reflectometry technique at 300K in the frequency range of 10 KHz to 20-GHz. Bilinear calibration method is used to obtain complex permittivity ɛ*(ω) from complex reflection coefficient ρ*(ω) over the frequency range of 10 MHz to 20 GHz. The Excess inverse relaxation time (1/t)E, Kirkwood correlation factor (geff) and Bruggeman factor (fB) are also estimated to study the solute-solvent interaction. The value of dielectric constant increases & relaxation time decreases with increase in concentration 1-PR in 1-HE. Bruggeman plot shows a non - linearity of the curve for all concentration, indicate the hetero interaction which may be due to hydrogen bonding of the OH group of 1-PR with 1-HE.
{"title":"Microwave dielectric relaxation study of 1-Hexanol with 1-propenol mixture by using time domain reflectometry at 300K","authors":"A. Tidar, Sayyad Shafiyoddin, S. Kamble, G. Dharne, S. Patil, P. Khirade, S. Mehrotra","doi":"10.1109/AEMC.2009.5430597","DOIUrl":"https://doi.org/10.1109/AEMC.2009.5430597","url":null,"abstract":"Dielectric relaxation measurement of 1-Hexanol (1-HE), 1-Propenol (1-PR) & their complex have been carried out over the entire concentration range using time domain reflectometry technique at 300K in the frequency range of 10 KHz to 20-GHz. Bilinear calibration method is used to obtain complex permittivity ɛ*(ω) from complex reflection coefficient ρ*(ω) over the frequency range of 10 MHz to 20 GHz. The Excess inverse relaxation time (1/t)E, Kirkwood correlation factor (geff) and Bruggeman factor (fB) are also estimated to study the solute-solvent interaction. The value of dielectric constant increases & relaxation time decreases with increase in concentration 1-PR in 1-HE. Bruggeman plot shows a non - linearity of the curve for all concentration, indicate the hetero interaction which may be due to hydrogen bonding of the OH group of 1-PR with 1-HE.","PeriodicalId":127199,"journal":{"name":"2009 Applied Electromagnetics Conference (AEMC)","volume":"194 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116484728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/AEMC.2009.5430625
M. Mukherjee
Extensive simulation experiments are carried out for the first time, to study the photo-irradiation effects on the high frequency characteristics of III-V GaN (Gallium Nitride) based Top-Mounted and Flip-Chip IMPATT oscillators at MM-wave window frequency (140.0 GHz). MM-wave properties of un-illuminated GaN IMPATTs are compared with those of conventional Si, GaAs and InP IMPATTs, under similar operating conditions. Superiority of GaN based IMPATTs at D-band is established. It is found that the un-illuminated GaN IMPATT is capable of delivering a output power of 5.6 W with an efficiency of 23.5% at 145.0 GHz. Frequency up-chirping of 6.0 GHz and a degradation of power output by almost 15.0 % are further observed in case of photo-illuminated FC IMPATT. The study reveals that compared to predominate electron photocurrent in Top-Mounted IMPATT, photo-generated leakage current dominated by hole in Flip-Chip IMPATT has more pronounced effect on the GaN based device as regards the frequency chirping and decrease of negative conductance and total negative resistance per unit area of the device. The inequality in the magnitudes of electron and hole ionization rates in the Wide Band Gap semiconductor have been found to be correlated with the above results. The study reveals that GaN IMPATT is a potential candidate for replacing conventional IMPATTs at high frequency operation. These results are useful for practical realization of optically modulated GaN based high power IMPATTs for application in MM-wave communication systems.
{"title":"Optically controlled characteristics of III–V Nitride based MM-wave transit-time devices","authors":"M. Mukherjee","doi":"10.1109/AEMC.2009.5430625","DOIUrl":"https://doi.org/10.1109/AEMC.2009.5430625","url":null,"abstract":"Extensive simulation experiments are carried out for the first time, to study the photo-irradiation effects on the high frequency characteristics of III-V GaN (Gallium Nitride) based Top-Mounted and Flip-Chip IMPATT oscillators at MM-wave window frequency (140.0 GHz). MM-wave properties of un-illuminated GaN IMPATTs are compared with those of conventional Si, GaAs and InP IMPATTs, under similar operating conditions. Superiority of GaN based IMPATTs at D-band is established. It is found that the un-illuminated GaN IMPATT is capable of delivering a output power of 5.6 W with an efficiency of 23.5% at 145.0 GHz. Frequency up-chirping of 6.0 GHz and a degradation of power output by almost 15.0 % are further observed in case of photo-illuminated FC IMPATT. The study reveals that compared to predominate electron photocurrent in Top-Mounted IMPATT, photo-generated leakage current dominated by hole in Flip-Chip IMPATT has more pronounced effect on the GaN based device as regards the frequency chirping and decrease of negative conductance and total negative resistance per unit area of the device. The inequality in the magnitudes of electron and hole ionization rates in the Wide Band Gap semiconductor have been found to be correlated with the above results. The study reveals that GaN IMPATT is a potential candidate for replacing conventional IMPATTs at high frequency operation. These results are useful for practical realization of optically modulated GaN based high power IMPATTs for application in MM-wave communication systems.","PeriodicalId":127199,"journal":{"name":"2009 Applied Electromagnetics Conference (AEMC)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121698777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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