The influence of doping with Sn atoms is investigated in details. The method of additional doping with electroactive impurities is used. The peculiarities of kinetic coefficients of Bi/sub 2/Te/sub 3/ doped with Sn and J simultaneously are discussed. There is good reason to believe that these peculiarities are due to Sn-resonant states.
{"title":"Peculiarities of electrophysical properties of Bi/sub 2/Te/sub 3/ doped with Sn","authors":"M.K. Zhitinskaya, S. Nemov, T. E. Svechnikova","doi":"10.1109/ICT.1997.666977","DOIUrl":"https://doi.org/10.1109/ICT.1997.666977","url":null,"abstract":"The influence of doping with Sn atoms is investigated in details. The method of additional doping with electroactive impurities is used. The peculiarities of kinetic coefficients of Bi/sub 2/Te/sub 3/ doped with Sn and J simultaneously are discussed. There is good reason to believe that these peculiarities are due to Sn-resonant states.","PeriodicalId":174813,"journal":{"name":"XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123162322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
It has been demonstrated that the thermocouple with strong dependence of the thermoelectric parameters can be in the regime of temperature instability. The criterion of the instability origin has been calculated in the case when the Joule heat flow to the external junctions is absorbed by the Peltier effect and the temperature deviations of thermoelectric parameters can strongly break the heat balance. In this case only the Seebeck coefficient temperature dependence and the thermocouple figure of merit value determine the instability criterion. The thermocouple in the unstable regime can be used as a memory cell, a temperature amplifier and a temperature element very sensitive to the voltage.
{"title":"The thermocouple temperature instability","authors":"B. Goltsman, Y. Ravich","doi":"10.1109/ICT.1997.667638","DOIUrl":"https://doi.org/10.1109/ICT.1997.667638","url":null,"abstract":"It has been demonstrated that the thermocouple with strong dependence of the thermoelectric parameters can be in the regime of temperature instability. The criterion of the instability origin has been calculated in the case when the Joule heat flow to the external junctions is absorbed by the Peltier effect and the temperature deviations of thermoelectric parameters can strongly break the heat balance. In this case only the Seebeck coefficient temperature dependence and the thermocouple figure of merit value determine the instability criterion. The thermocouple in the unstable regime can be used as a memory cell, a temperature amplifier and a temperature element very sensitive to the voltage.","PeriodicalId":174813,"journal":{"name":"XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)","volume":"470 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127128518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
It has been suggested that microengineering traditional thermoelectric materials into composites may lead to a significant improvement in their thermoelectric performance because of the reduction of phonon thermal conductivity from phonon scattering at the grain boundaries and interfaces. At the fundamental level the composite figure of merit ZT may be dramatically increased over that for bulk because of the increase of the electronic density of states that occur in low dimensionality systems. One approach for the fabrication of nanostructured materials is the utilization of nanochannel insulators as a matrix for the synthesis of dense composites using high pressure injection (HPI) of the semiconductor melt. We discuss the synthesis and structural properties of oriented Bi/sub 2/Te/sub 3/ nanowire arrays in Anopore porous alumina as well as random networks of Bi/sub 2/Te/sub 3/ nanocrystals. The trigonal Bi/sub 2/Te/sub 3/ crystallites that form the wire are oriented with the basal plane of the hexagonal plane, i.e., the plane of highest conductivity, along the wire length. Bi wire arrays are similarly oriented. This structural effect is directly a result of the processing using the HPI technique. Another implication of our results is that wire arrays have a higher figure of merit than random networks.
{"title":"Thermoelectric properties of Bi and Bi/sub 2/Te/sub 3/ composites","authors":"T. Huber, R. Calcao","doi":"10.1109/ICT.1997.667165","DOIUrl":"https://doi.org/10.1109/ICT.1997.667165","url":null,"abstract":"It has been suggested that microengineering traditional thermoelectric materials into composites may lead to a significant improvement in their thermoelectric performance because of the reduction of phonon thermal conductivity from phonon scattering at the grain boundaries and interfaces. At the fundamental level the composite figure of merit ZT may be dramatically increased over that for bulk because of the increase of the electronic density of states that occur in low dimensionality systems. One approach for the fabrication of nanostructured materials is the utilization of nanochannel insulators as a matrix for the synthesis of dense composites using high pressure injection (HPI) of the semiconductor melt. We discuss the synthesis and structural properties of oriented Bi/sub 2/Te/sub 3/ nanowire arrays in Anopore porous alumina as well as random networks of Bi/sub 2/Te/sub 3/ nanocrystals. The trigonal Bi/sub 2/Te/sub 3/ crystallites that form the wire are oriented with the basal plane of the hexagonal plane, i.e., the plane of highest conductivity, along the wire length. Bi wire arrays are similarly oriented. This structural effect is directly a result of the processing using the HPI technique. Another implication of our results is that wire arrays have a higher figure of merit than random networks.","PeriodicalId":174813,"journal":{"name":"XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115024763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Anno, T. Sakakibara, Y. Notohara, H. Tashiro, T. Koyanagi, H. Kaneko, K. Matsubara
The thin film growth of CoSb/sub 3/ on a semi-insulating GaAs(100) substrate was made by using magnetron rf-sputtering, and the electrical and thermoelectric properties of the films were studied with relation to annealing temperature and film thickness. Polycrystalline films with the skutterudite structure were successfully grown on the GaAs(100) substrate. The obtained films were found to be p-type, and their hole mobility, electrical conductivity, and Seebeck coefficient significantly changed depending on the annealing temperature and the thickness. A huge Seebeck coefficient of 600 /spl mu/V/K, which is about three times as large as the value of a p-type single crystal, was obtained for a thin film annealed at 750/spl deg/C with thickness of 71 nm, and the power factor reached the value of 2/spl times/10/sup -4/ W/cm K/sup 2/. The variation in the thermoelectric properties with the annealing temperature and the thickness can be explained well in terms of a model which takes into account a carrier energy filtering effect by potential barriers at grain boundaries. According to the model, the Seebeck coefficient increases with increasing potential barrier height and also decreases with increasing carrier concentration.
{"title":"Preparation and thermoelectric properties of CoSb/sub 3/ thin films on GaAs(100) substrate","authors":"H. Anno, T. Sakakibara, Y. Notohara, H. Tashiro, T. Koyanagi, H. Kaneko, K. Matsubara","doi":"10.1109/ICT.1997.667148","DOIUrl":"https://doi.org/10.1109/ICT.1997.667148","url":null,"abstract":"The thin film growth of CoSb/sub 3/ on a semi-insulating GaAs(100) substrate was made by using magnetron rf-sputtering, and the electrical and thermoelectric properties of the films were studied with relation to annealing temperature and film thickness. Polycrystalline films with the skutterudite structure were successfully grown on the GaAs(100) substrate. The obtained films were found to be p-type, and their hole mobility, electrical conductivity, and Seebeck coefficient significantly changed depending on the annealing temperature and the thickness. A huge Seebeck coefficient of 600 /spl mu/V/K, which is about three times as large as the value of a p-type single crystal, was obtained for a thin film annealed at 750/spl deg/C with thickness of 71 nm, and the power factor reached the value of 2/spl times/10/sup -4/ W/cm K/sup 2/. The variation in the thermoelectric properties with the annealing temperature and the thickness can be explained well in terms of a model which takes into account a carrier energy filtering effect by potential barriers at grain boundaries. According to the model, the Seebeck coefficient increases with increasing potential barrier height and also decreases with increasing carrier concentration.","PeriodicalId":174813,"journal":{"name":"XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116065146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The paper is a continuation of our investigations on a thermoelectric cooling system for medical applications in cryosurgical destroyers. It concerns experimental analysis of a three-stage thermoelectric cascade based on Melcor modules. The experiments have been conducted for two working conditions: first-maximum temperature difference /spl Delta/T/sub max/ and the second-maximum cooling capacity Q/sub 0max/. The best obtained results are as follows: maximum temperature difference /spl Delta/T=115.5 K for supplying current I=3.1 A, maximum cooling capacity Q/sub 0/=8.05 W for supplying current I=2.8 A. Moreover the results have been applied to verify the method of numerical optimization of thermoelectric multistage systems elaborated in the framework of our previous research. That verification is in good agreement with the experimental results. The experiments have confirmed that the temperature of the cold side of the cascade can reach the level of 200 K (-73/spl deg/C) while the cooling capacity at the same time equals Q/sub 0/=1 W.
{"title":"Thermoelectric cascade for cryosurgical destroyer","authors":"T. Wartanowicz, A. Czarnecki","doi":"10.1109/ICT.1997.667628","DOIUrl":"https://doi.org/10.1109/ICT.1997.667628","url":null,"abstract":"The paper is a continuation of our investigations on a thermoelectric cooling system for medical applications in cryosurgical destroyers. It concerns experimental analysis of a three-stage thermoelectric cascade based on Melcor modules. The experiments have been conducted for two working conditions: first-maximum temperature difference /spl Delta/T/sub max/ and the second-maximum cooling capacity Q/sub 0max/. The best obtained results are as follows: maximum temperature difference /spl Delta/T=115.5 K for supplying current I=3.1 A, maximum cooling capacity Q/sub 0/=8.05 W for supplying current I=2.8 A. Moreover the results have been applied to verify the method of numerical optimization of thermoelectric multistage systems elaborated in the framework of our previous research. That verification is in good agreement with the experimental results. The experiments have confirmed that the temperature of the cold side of the cascade can reach the level of 200 K (-73/spl deg/C) while the cooling capacity at the same time equals Q/sub 0/=1 W.","PeriodicalId":174813,"journal":{"name":"XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)","volume":"562 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116518904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The investigation results of thermal compensation systems for thermoelectric cooling modules parameters determination have been given. Thermoelectric thermal meters were used at heat balance sensors, stage thermoelectric batteries were used as compensating heat and cold sources. Methods and devices made it possible to determine parameters of thermoelectric cooling modules with increased accuracy.
{"title":"Precise methods and equipment for thermoelectric cooling modules parameters measurement","authors":"L. Anatychuk, N. I. Varich, A. Shchedrin","doi":"10.1109/ICT.1997.667619","DOIUrl":"https://doi.org/10.1109/ICT.1997.667619","url":null,"abstract":"The investigation results of thermal compensation systems for thermoelectric cooling modules parameters determination have been given. Thermoelectric thermal meters were used at heat balance sensors, stage thermoelectric batteries were used as compensating heat and cold sources. Methods and devices made it possible to determine parameters of thermoelectric cooling modules with increased accuracy.","PeriodicalId":174813,"journal":{"name":"XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122401637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Kurt, W. Pitschke, A. Heinrich, J. Schumann, K. Wetzig
Iridium silicide thin films were prepared by means of electron beam evaporation. The deposition process was monitored by measuring the deposition rates using quartz-crystal oscillators and the temperature at the rear of the substrate. The film composition was determined by means of energy dispersive X-ray analysis (EDX). It changes systematically as a result of the geometric arrangement of the evaporators and of the substrate permitting the preparation of layers with continually varied range of stoichiometry during one deposition experiment. The structure of the layers becomes amorphous when the substrates temperature becomes lower than 373 K during deposition process. The impurity concentration of the layers was determined by means of mass spectrometry to be less than 600 at.-ppm which is about 2 orders of magnitude less than that of layers deposited by means of magnetron sputtering.
{"title":"Preparation of iridium silicide thin films by means of electron beam evaporation","authors":"R. Kurt, W. Pitschke, A. Heinrich, J. Schumann, K. Wetzig","doi":"10.1109/ICT.1997.667138","DOIUrl":"https://doi.org/10.1109/ICT.1997.667138","url":null,"abstract":"Iridium silicide thin films were prepared by means of electron beam evaporation. The deposition process was monitored by measuring the deposition rates using quartz-crystal oscillators and the temperature at the rear of the substrate. The film composition was determined by means of energy dispersive X-ray analysis (EDX). It changes systematically as a result of the geometric arrangement of the evaporators and of the substrate permitting the preparation of layers with continually varied range of stoichiometry during one deposition experiment. The structure of the layers becomes amorphous when the substrates temperature becomes lower than 373 K during deposition process. The impurity concentration of the layers was determined by means of mass spectrometry to be less than 600 at.-ppm which is about 2 orders of magnitude less than that of layers deposited by means of magnetron sputtering.","PeriodicalId":174813,"journal":{"name":"XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122426561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Y. Lee, R. Isobe, M. Yomura, I. Nakamoto, T. Koyanagi
Sintered Bi was prepared by using the plasma-treated powder in order to improve their thermoelectric figure of merit. Surfaces of Bi raw powder were modified in the Ar, H/sub 2/, O/sub 2/ and SbCl/sub 3/ rf-plasmas prior to sintering, and Bi was sintered using the powder obtained by the spark plasma sintering. For Bi samples sintered using O/sub 2/ plasma-treated powder, the electrical conductivity /spl sigma/ was increased in spite of growth of Bi oxides, as compared with that of the untreated one. The increase in /spl sigma/ is attributed to the increase in the carrier concentration. As a result, the thermoelectric figure of merit at room temperature was improved 1.5 times as high as that of the untreated one. The improvement of thermoelectric properties of sintered Bi was observed also in the case of other gas plasma treatment.
{"title":"Thermoelectric properties of sintered Bi using plasma-treated powder","authors":"Y. Lee, R. Isobe, M. Yomura, I. Nakamoto, T. Koyanagi","doi":"10.1109/ICT.1997.667081","DOIUrl":"https://doi.org/10.1109/ICT.1997.667081","url":null,"abstract":"Sintered Bi was prepared by using the plasma-treated powder in order to improve their thermoelectric figure of merit. Surfaces of Bi raw powder were modified in the Ar, H/sub 2/, O/sub 2/ and SbCl/sub 3/ rf-plasmas prior to sintering, and Bi was sintered using the powder obtained by the spark plasma sintering. For Bi samples sintered using O/sub 2/ plasma-treated powder, the electrical conductivity /spl sigma/ was increased in spite of growth of Bi oxides, as compared with that of the untreated one. The increase in /spl sigma/ is attributed to the increase in the carrier concentration. As a result, the thermoelectric figure of merit at room temperature was improved 1.5 times as high as that of the untreated one. The improvement of thermoelectric properties of sintered Bi was observed also in the case of other gas plasma treatment.","PeriodicalId":174813,"journal":{"name":"XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122699371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Lange, S. Brehme, W. Henrion, A. Heinrich, G. Behr, H. Griessmann, A. Filonov, V. E. Borisenko
The actual knowledge existing on electronic structure determinations for semiconducting transition metal silicides obtained from band structure calculations and investigations of optical interband spectra is reviewed. The emphasis is put on the information available for the semiconducting 3d transition metal silicides which is combined with recently gained experimental and theoretical data for the semiconducting 4d and 5d transition metal silicides. From band structure studies and optical investigations it is concluded that most semiconducting transition metal silicides are indirect-gap materials. An electrical data analysis indicates that all non-intentionally doped semiconducting silicides exhibit hole conduction with relatively high carrier concentrations even in epitaxial films and single crystals. The experimental electron to hole mobility ratios are less than unity, i.e. mobilities of electrons are usually much lower than those of holes. Effective masses seem to be /spl ges/1 free electron mass for most semiconducting silicides. The extensive work done on the electrical and thermoelectrical properties of semiconducting iron disilicide thin films and single crystals is considered in more detail.
{"title":"Semiconducting transition metal silicides: electronic structure, electrical and thermoelectrical properties","authors":"H. Lange, S. Brehme, W. Henrion, A. Heinrich, G. Behr, H. Griessmann, A. Filonov, V. E. Borisenko","doi":"10.1109/ICT.1997.667122","DOIUrl":"https://doi.org/10.1109/ICT.1997.667122","url":null,"abstract":"The actual knowledge existing on electronic structure determinations for semiconducting transition metal silicides obtained from band structure calculations and investigations of optical interband spectra is reviewed. The emphasis is put on the information available for the semiconducting 3d transition metal silicides which is combined with recently gained experimental and theoretical data for the semiconducting 4d and 5d transition metal silicides. From band structure studies and optical investigations it is concluded that most semiconducting transition metal silicides are indirect-gap materials. An electrical data analysis indicates that all non-intentionally doped semiconducting silicides exhibit hole conduction with relatively high carrier concentrations even in epitaxial films and single crystals. The experimental electron to hole mobility ratios are less than unity, i.e. mobilities of electrons are usually much lower than those of holes. Effective masses seem to be /spl ges/1 free electron mass for most semiconducting silicides. The extensive work done on the electrical and thermoelectrical properties of semiconducting iron disilicide thin films and single crystals is considered in more detail.","PeriodicalId":174813,"journal":{"name":"XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114264500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Sintering process to fabricate iron disilicides with a fine grain structure is pursued using elemental powders as starting materials. Additions of Al to the binary Fe-Si system are attempted. This is because Al has a considerably lower melting point than Fe and Si and hence liquid Al phase would be involved upon sintering to help accelerate the reaction kinetics to form iron disilicides. Sintering of ternary iron disilicides is attempted also with additions of Co and Cu, the former being an n-type dopant while the latter might promote metal-to-semiconductor transition upon annealing after sintering. Effects of such additions are examined on the sintering kinetics, constituent phases in the products, and their thermoelectric properties. It is shown that fabrication of sintered iron disilicides using elemental powders becomes possible with Al additions, for which a mechanism of sintering in the Fe-Si-Al ternary system is proposed. Also a series of demonstrations is given for the changes in thermoelectric properties with difference in doping element.
{"title":"Fabrication of ternary iron disilicides as thermoelectric semiconductors by sintering using elemental powders","authors":"Y. Ohta, S. Miura, Y. Mishima","doi":"10.1109/ICT.1997.667132","DOIUrl":"https://doi.org/10.1109/ICT.1997.667132","url":null,"abstract":"Sintering process to fabricate iron disilicides with a fine grain structure is pursued using elemental powders as starting materials. Additions of Al to the binary Fe-Si system are attempted. This is because Al has a considerably lower melting point than Fe and Si and hence liquid Al phase would be involved upon sintering to help accelerate the reaction kinetics to form iron disilicides. Sintering of ternary iron disilicides is attempted also with additions of Co and Cu, the former being an n-type dopant while the latter might promote metal-to-semiconductor transition upon annealing after sintering. Effects of such additions are examined on the sintering kinetics, constituent phases in the products, and their thermoelectric properties. It is shown that fabrication of sintered iron disilicides using elemental powders becomes possible with Al additions, for which a mechanism of sintering in the Fe-Si-Al ternary system is proposed. Also a series of demonstrations is given for the changes in thermoelectric properties with difference in doping element.","PeriodicalId":174813,"journal":{"name":"XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117099582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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