Pub Date : 2015-07-13DOI: 10.1109/IVNC.2015.7225559
Zhi Tao, Yuxuan Chen
A novel development of combining the vacuum field-emission and nanoelectronic nanowire field-effect transistor technique in the photodetector application. In the report, Quantum Dots(QDs) are decorated onto reduced graphene oxide(RGO) fragments to overcome the low light photo responses(~0.08A/W) of pristine graphene. In addition, exploiting high light absorption of quantum dots and RGO fragments, the photo current can be amplified for scales of times by the electron injection from excited quantum dots to ZnO nanowire wrapping around RGO fragments. The device was measured under the vacuum chamber of the scanning electron microscope(SEM) by a high-precision 4-probe nano-manipulator. This work will broaden a new researching thought to realize this vacuum microelectronic photodetector.
{"title":"High-performance Quantum Dots decorated graphene/ZnO-nanowire field-emission type field-effect transistor","authors":"Zhi Tao, Yuxuan Chen","doi":"10.1109/IVNC.2015.7225559","DOIUrl":"https://doi.org/10.1109/IVNC.2015.7225559","url":null,"abstract":"A novel development of combining the vacuum field-emission and nanoelectronic nanowire field-effect transistor technique in the photodetector application. In the report, Quantum Dots(QDs) are decorated onto reduced graphene oxide(RGO) fragments to overcome the low light photo responses(~0.08A/W) of pristine graphene. In addition, exploiting high light absorption of quantum dots and RGO fragments, the photo current can be amplified for scales of times by the electron injection from excited quantum dots to ZnO nanowire wrapping around RGO fragments. The device was measured under the vacuum chamber of the scanning electron microscope(SEM) by a high-precision 4-probe nano-manipulator. This work will broaden a new researching thought to realize this vacuum microelectronic photodetector.","PeriodicalId":195254,"journal":{"name":"2015 28th International Vacuum Nanoelectronics Conference (IVNC)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114919192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-07-13DOI: 10.1109/IVNC.2015.7225576
J. Klas, D. Lutzenkirchen-Hecht, P. Serbun, G. Muller
We have fabricated pointed graphite emitters (PGEs) from a thin graphite foil by a rather simple cutting technique. After a sudden activation, PGEs reproducibly provide currents up to 3 mA at 4 V/μm, and after 2 h conditioning a nearly stable current of 500 μA over 10 h. Luminescent screen images reveal multiple field emitters from fluctuating spots. Such a PGE was used as reliable electron source in quatrode configuration for a transmission-type X-ray demonstrator. A first X-ray spectrum was obtained using a 5 μm thin Ni target.
{"title":"Low-voltage high-curent field emission from a simple pointed graphite emitter tested in a transmission-type X-ray demonstator","authors":"J. Klas, D. Lutzenkirchen-Hecht, P. Serbun, G. Muller","doi":"10.1109/IVNC.2015.7225576","DOIUrl":"https://doi.org/10.1109/IVNC.2015.7225576","url":null,"abstract":"We have fabricated pointed graphite emitters (PGEs) from a thin graphite foil by a rather simple cutting technique. After a sudden activation, PGEs reproducibly provide currents up to 3 mA at 4 V/μm, and after 2 h conditioning a nearly stable current of 500 μA over 10 h. Luminescent screen images reveal multiple field emitters from fluctuating spots. Such a PGE was used as reliable electron source in quatrode configuration for a transmission-type X-ray demonstrator. A first X-ray spectrum was obtained using a 5 μm thin Ni target.","PeriodicalId":195254,"journal":{"name":"2015 28th International Vacuum Nanoelectronics Conference (IVNC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129006684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-07-13DOI: 10.1109/IVNC.2015.7225584
M. Bachmann, F. Dams, F. Dusberg, M. Hofmann, A. Pahlke, C. Langer, R. Lawrowski, C. Prommesberger, R. Schreiner
Electron sources based on silicon field emitter arrays, produced in processes based on semiconductor technology, are good candidates for a miniaturized X-ray source. A key parameter for this application is the stability of the X-ray photon flux and, thus, the emission current. In the present work we have investigated the influence of the residual gas pressure and a resistor in series on the emission stability of a high aspect ratio n-type silicon emitter array with hybrid extraction electrode. An increase of current fluctuations was found for pressures above 10-6 mbar. High resistances in series to the emitter array alter the emission characteristics, but greatly suppress spikes in the emission current and improve its stability. This, however, strongly depends on the bias point. The field enhancement factor is not affected by the resistance. In a long term measurement the emission current was found to be constant after an initial phase of degradation.
{"title":"Stability investigation of high aspect ratio n-type silicon field emitter arrays","authors":"M. Bachmann, F. Dams, F. Dusberg, M. Hofmann, A. Pahlke, C. Langer, R. Lawrowski, C. Prommesberger, R. Schreiner","doi":"10.1109/IVNC.2015.7225584","DOIUrl":"https://doi.org/10.1109/IVNC.2015.7225584","url":null,"abstract":"Electron sources based on silicon field emitter arrays, produced in processes based on semiconductor technology, are good candidates for a miniaturized X-ray source. A key parameter for this application is the stability of the X-ray photon flux and, thus, the emission current. In the present work we have investigated the influence of the residual gas pressure and a resistor in series on the emission stability of a high aspect ratio n-type silicon emitter array with hybrid extraction electrode. An increase of current fluctuations was found for pressures above 10-6 mbar. High resistances in series to the emitter array alter the emission characteristics, but greatly suppress spikes in the emission current and improve its stability. This, however, strongly depends on the bias point. The field enhancement factor is not affected by the resistance. In a long term measurement the emission current was found to be constant after an initial phase of degradation.","PeriodicalId":195254,"journal":{"name":"2015 28th International Vacuum Nanoelectronics Conference (IVNC)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133979733","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-07-13DOI: 10.1109/IVNC.2015.7225528
Chun Li, G. Yuan, Jiesheng Wang, Xinxiang Song, Shunfu Xu, Xiao-Juan Fan
The electric field and electron focusing performance of ZnO nano-cone arrays in planar gated emitter is mimulated by finite element method. The influences of the ZnO arrays with various geometric structures on surface field of the cone will be presented. Focusing performance of the electron beam is also discussed.
{"title":"Simulation of field enhancement and electron focusing performance of ZnO nano-cone arrays in planar gated emitter","authors":"Chun Li, G. Yuan, Jiesheng Wang, Xinxiang Song, Shunfu Xu, Xiao-Juan Fan","doi":"10.1109/IVNC.2015.7225528","DOIUrl":"https://doi.org/10.1109/IVNC.2015.7225528","url":null,"abstract":"The electric field and electron focusing performance of ZnO nano-cone arrays in planar gated emitter is mimulated by finite element method. The influences of the ZnO arrays with various geometric structures on surface field of the cone will be presented. Focusing performance of the electron beam is also discussed.","PeriodicalId":195254,"journal":{"name":"2015 28th International Vacuum Nanoelectronics Conference (IVNC)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115734679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-07-13DOI: 10.1109/IVNC.2015.7225590
H. J. Huang, Yu Zhang, Y. Ke, N. Xu, S. Deng
A re-entrant cavity resonator with carbon nanotubes cold cathode was fabricated. The cold cathode was driven by L band signal and a modulated electron emission of CNTs was achieved. An average current of 3.865 μA was recorded when a 1W/1.572GHz signal was led in the cavity, corresponding density of 193.3 μA/cm2. The highest output power was obtained at nearly 1.6S A re-entrant cavity resonator with carbon nanotubes cold cathode was fabricated. The cold cathode was driven by L band signal and a modulated electron emission of CNTs was achieved. An average current of 3.865 μA was recorded when a 1W/1.572GHz signal was led in the cavity, corresponding density of 193.3 μA/cm2. The highest output power was obtained at nearly 1.65 GHz frequency under 100 mW input.GHz frequency under 100 mW input.
{"title":"A modulated field emission from carbon nanotubes cold cathode cavity resonator in L band frequency","authors":"H. J. Huang, Yu Zhang, Y. Ke, N. Xu, S. Deng","doi":"10.1109/IVNC.2015.7225590","DOIUrl":"https://doi.org/10.1109/IVNC.2015.7225590","url":null,"abstract":"A re-entrant cavity resonator with carbon nanotubes cold cathode was fabricated. The cold cathode was driven by L band signal and a modulated electron emission of CNTs was achieved. An average current of 3.865 μA was recorded when a 1W/1.572GHz signal was led in the cavity, corresponding density of 193.3 μA/cm2. The highest output power was obtained at nearly 1.6S A re-entrant cavity resonator with carbon nanotubes cold cathode was fabricated. The cold cathode was driven by L band signal and a modulated electron emission of CNTs was achieved. An average current of 3.865 μA was recorded when a 1W/1.572GHz signal was led in the cavity, corresponding density of 193.3 μA/cm2. The highest output power was obtained at nearly 1.65 GHz frequency under 100 mW input.GHz frequency under 100 mW input.","PeriodicalId":195254,"journal":{"name":"2015 28th International Vacuum Nanoelectronics Conference (IVNC)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122071283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-07-13DOI: 10.1109/IVNC.2015.7225529
S. Liang
We study comparatively Fowler-Nordheim (FN) and Schottky-Nordheim (SN) models to give a criterion to identify the image potential effect in the field emission from non-metallic emitters, which can be applied to distinct the metallic and non-metallic properties of the field emission from the experimental data.
{"title":"How to identify the image potential in field emission from non-metallic emitters?","authors":"S. Liang","doi":"10.1109/IVNC.2015.7225529","DOIUrl":"https://doi.org/10.1109/IVNC.2015.7225529","url":null,"abstract":"We study comparatively Fowler-Nordheim (FN) and Schottky-Nordheim (SN) models to give a criterion to identify the image potential effect in the field emission from non-metallic emitters, which can be applied to distinct the metallic and non-metallic properties of the field emission from the experimental data.","PeriodicalId":195254,"journal":{"name":"2015 28th International Vacuum Nanoelectronics Conference (IVNC)","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123961287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-07-13DOI: 10.1109/IVNC.2015.7225589
D. Shin, K. N. Yun, Jun Soo Han, Cheol Jin Lee, S. Jeon, Dongwon Shin
A sheet electron beam source is demonstrated using a line-shape carbon nanotube (CNT) field emitter. The line-shape CNT field emitter shows large emission current under the small applied voltage. Moreover, the emitted electron is well-confined without any focusing lens.
{"title":"Sheet electron beam from line-shape carbon nanotube field emitters","authors":"D. Shin, K. N. Yun, Jun Soo Han, Cheol Jin Lee, S. Jeon, Dongwon Shin","doi":"10.1109/IVNC.2015.7225589","DOIUrl":"https://doi.org/10.1109/IVNC.2015.7225589","url":null,"abstract":"A sheet electron beam source is demonstrated using a line-shape carbon nanotube (CNT) field emitter. The line-shape CNT field emitter shows large emission current under the small applied voltage. Moreover, the emitted electron is well-confined without any focusing lens.","PeriodicalId":195254,"journal":{"name":"2015 28th International Vacuum Nanoelectronics Conference (IVNC)","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129071763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-07-13DOI: 10.1109/IVNC.2015.7225579
C. Prommesberger, C. Langer, R. Lawrowski, F. Muller, F. Dams, R. Schreiner, P. Serbun, G. Muller
Silicon tip arrays were fabricated by means of reactive ion etching followed by oxidation for final sharpening and molybdenum thin film coating. The field-emission (FE) properties of these Mo-coated p-Si tip arrays were systemically investigated by different measurement techniques. Integral measurements in diode configuration yielded a turn-on field (for 1 nA) of 22 V/μm and nearly stable FE currents up to 6.6 μA at 38 V/μm. The effective field enhancements factor extracted from the FN plots is about 180. Detailed investigations of these FE arrays were also performed by means of field emission scanning microscopy combined with electron microscopy. A rather limited efficiency of the tips (50% at 1500 V) and FE homogeneity (180 nA at 700 V) might be correlated with the varying morphology of the tips and the presence of oxides. Local I-V measurements of selected single tips revealed both activation and deactivation effects, which finally resulted in nearly reproducible I-V curves. Current stability measurements at a constant voltage showed rather large fluctuations (0.1-1 μA) of the FE current, which could be reduced up to 1.7% by using of a PID-regulated voltage source. SEM images showed unchanged tip shape after the current processing.
{"title":"Comparison of integral and local field-emission properties of Mo-coated p-Si tip arrays","authors":"C. Prommesberger, C. Langer, R. Lawrowski, F. Muller, F. Dams, R. Schreiner, P. Serbun, G. Muller","doi":"10.1109/IVNC.2015.7225579","DOIUrl":"https://doi.org/10.1109/IVNC.2015.7225579","url":null,"abstract":"Silicon tip arrays were fabricated by means of reactive ion etching followed by oxidation for final sharpening and molybdenum thin film coating. The field-emission (FE) properties of these Mo-coated p-Si tip arrays were systemically investigated by different measurement techniques. Integral measurements in diode configuration yielded a turn-on field (for 1 nA) of 22 V/μm and nearly stable FE currents up to 6.6 μA at 38 V/μm. The effective field enhancements factor extracted from the FN plots is about 180. Detailed investigations of these FE arrays were also performed by means of field emission scanning microscopy combined with electron microscopy. A rather limited efficiency of the tips (50% at 1500 V) and FE homogeneity (180 nA at 700 V) might be correlated with the varying morphology of the tips and the presence of oxides. Local I-V measurements of selected single tips revealed both activation and deactivation effects, which finally resulted in nearly reproducible I-V curves. Current stability measurements at a constant voltage showed rather large fluctuations (0.1-1 μA) of the FE current, which could be reduced up to 1.7% by using of a PID-regulated voltage source. SEM images showed unchanged tip shape after the current processing.","PeriodicalId":195254,"journal":{"name":"2015 28th International Vacuum Nanoelectronics Conference (IVNC)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130998693","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-07-13DOI: 10.1109/IVNC.2015.7225564
J. She, Tao Cao, S. Deng, Jun Chen, N. Xu
This talk gives an overview on the precisely-controlled fabrication, optimization of the field electron emission performance, and the potential application of the zinc oxide nanoemitter arrays. The related nanofabrication methods, material and device physics are discussed.
{"title":"ZnO nanowire field electron emitters","authors":"J. She, Tao Cao, S. Deng, Jun Chen, N. Xu","doi":"10.1109/IVNC.2015.7225564","DOIUrl":"https://doi.org/10.1109/IVNC.2015.7225564","url":null,"abstract":"This talk gives an overview on the precisely-controlled fabrication, optimization of the field electron emission performance, and the potential application of the zinc oxide nanoemitter arrays. The related nanofabrication methods, material and device physics are discussed.","PeriodicalId":195254,"journal":{"name":"2015 28th International Vacuum Nanoelectronics Conference (IVNC)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126788806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-07-13DOI: 10.1109/IVNC.2015.7225569
V. Kleshch, A. Obraztsov, S. Purcell
Polycrystalline CVD diamond films were thermally oxidized in order to obtain single-crystal diamond needles. Field electron emission properties of the needles were studied using UHV system equipped with an electron energy analyzer. Current-voltage characteristics have shown strong current saturation that is predicted by the basic theory of the electron emission from semiconductors. Using the energy analyzer total energy distributions of the emitted electrons were measured as a function of temperature and current. This permitted estimation of activation energy of the saturation current and definition of possible mechanisms of carrier transport. Obtained results show that despite the large band gap of diamond, the needles obtained by thermal oxidation of polycrystalline CVD diamond films without intentional doping can be used as effective field emission point sources.
{"title":"Field emission from diamond needles produced by CVD growth","authors":"V. Kleshch, A. Obraztsov, S. Purcell","doi":"10.1109/IVNC.2015.7225569","DOIUrl":"https://doi.org/10.1109/IVNC.2015.7225569","url":null,"abstract":"Polycrystalline CVD diamond films were thermally oxidized in order to obtain single-crystal diamond needles. Field electron emission properties of the needles were studied using UHV system equipped with an electron energy analyzer. Current-voltage characteristics have shown strong current saturation that is predicted by the basic theory of the electron emission from semiconductors. Using the energy analyzer total energy distributions of the emitted electrons were measured as a function of temperature and current. This permitted estimation of activation energy of the saturation current and definition of possible mechanisms of carrier transport. Obtained results show that despite the large band gap of diamond, the needles obtained by thermal oxidation of polycrystalline CVD diamond films without intentional doping can be used as effective field emission point sources.","PeriodicalId":195254,"journal":{"name":"2015 28th International Vacuum Nanoelectronics Conference (IVNC)","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121341601","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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