Pub Date : 2001-10-01DOI: 10.1109/EUMA.2001.338967
E. Artal, B. Aja, M. L. de la Fuente, C. Palacios, A. Mediavilla, J. P. Pascual, J. Portilla
A radiometer Back End Module based on broadband low noise amplifiers and band pass filters is presented. Low noise amplifiers are multistage HEMT MMIC chips. A 20% of bandwidth at 30 GHz have been achieved. The passband is fixed by coupled lines microstrip filters. A complete module containing two identical branches of amplification and filtering stages with a gain greater than 30 dB has been developed. The low 1/f noise behavior of gain fluctuations allows the module to be used as the Back End Module for the differential radiometers in the European Scientific mission Planck. Details of the MMIC chips and filters assembly as well as experimental results are included.
{"title":"Low 1/f Noise 30 GHz Broadband Amplifiers for the Differential Radiometers of the Planck Surveyor Mission.","authors":"E. Artal, B. Aja, M. L. de la Fuente, C. Palacios, A. Mediavilla, J. P. Pascual, J. Portilla","doi":"10.1109/EUMA.2001.338967","DOIUrl":"https://doi.org/10.1109/EUMA.2001.338967","url":null,"abstract":"A radiometer Back End Module based on broadband low noise amplifiers and band pass filters is presented. Low noise amplifiers are multistage HEMT MMIC chips. A 20% of bandwidth at 30 GHz have been achieved. The passband is fixed by coupled lines microstrip filters. A complete module containing two identical branches of amplification and filtering stages with a gain greater than 30 dB has been developed. The low 1/f noise behavior of gain fluctuations allows the module to be used as the Back End Module for the differential radiometers in the European Scientific mission Planck. Details of the MMIC chips and filters assembly as well as experimental results are included.","PeriodicalId":207696,"journal":{"name":"2001 31st European Microwave Conference","volume":"661 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133846838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-10-01DOI: 10.1109/EUMA.2001.339133
P. Blondy, D. Mercier, D. Cros, P. Guillon, P. Rey, P. Charvet, B. Diem, C. Zanchi, L. Lapierre, J. Sombrin, J. Quoirin
This abstract describes MEMS thermally actuated millimeter wave switches. The switches are constructed using a stress controlled dielectric membrane, with patterned metallic contacts. The resulting switches can be operated at low voltage, without sacrificing the spring constant. The structure allows to build resistive switches up to millimeter wave. Full wave simulations were performed using FEM and MoM codes, and agree well with measurements. A wafer scale packaging technique has been developed to protect the components during the dicing stage, and for long term durability. The measured isolation are better than 35 dB between 30 and 40 GHz.
{"title":"Packaged Millimeter Wave Thermal MEMS Switches","authors":"P. Blondy, D. Mercier, D. Cros, P. Guillon, P. Rey, P. Charvet, B. Diem, C. Zanchi, L. Lapierre, J. Sombrin, J. Quoirin","doi":"10.1109/EUMA.2001.339133","DOIUrl":"https://doi.org/10.1109/EUMA.2001.339133","url":null,"abstract":"This abstract describes MEMS thermally actuated millimeter wave switches. The switches are constructed using a stress controlled dielectric membrane, with patterned metallic contacts. The resulting switches can be operated at low voltage, without sacrificing the spring constant. The structure allows to build resistive switches up to millimeter wave. Full wave simulations were performed using FEM and MoM codes, and agree well with measurements. A wafer scale packaging technique has been developed to protect the components during the dicing stage, and for long term durability. The measured isolation are better than 35 dB between 30 and 40 GHz.","PeriodicalId":207696,"journal":{"name":"2001 31st European Microwave Conference","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134057339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-10-01DOI: 10.1109/EUMA.2001.338947
A. Cwikla, M. Mrozowski
The analysis of whispering gallery modes in a cylindrical sapphire resonator is shown. The formulation involves only two components of the electric flux density. Using the FDFD method on Yee's mesh, the electromagnetic problem is converted to a standard nonsymmetric matrix eigenvalue problem with a highly sparse and structured matrix. The resonant modes are found by means of the implicitly restarted Arnoldi method with Chebyshev acceleration. Is is shown that the application of Chebyshev preconditioning allows one to significantly reduce the computing time without increasing the memory cost.
{"title":"Fdfd Analysis of Whispering Gallery Modes","authors":"A. Cwikla, M. Mrozowski","doi":"10.1109/EUMA.2001.338947","DOIUrl":"https://doi.org/10.1109/EUMA.2001.338947","url":null,"abstract":"The analysis of whispering gallery modes in a cylindrical sapphire resonator is shown. The formulation involves only two components of the electric flux density. Using the FDFD method on Yee's mesh, the electromagnetic problem is converted to a standard nonsymmetric matrix eigenvalue problem with a highly sparse and structured matrix. The resonant modes are found by means of the implicitly restarted Arnoldi method with Chebyshev acceleration. Is is shown that the application of Chebyshev preconditioning allows one to significantly reduce the computing time without increasing the memory cost.","PeriodicalId":207696,"journal":{"name":"2001 31st European Microwave Conference","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132345301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-10-01DOI: 10.1109/EUMA.2001.339005
M. Krach, J. Freyer, M. Claassen
A frequency tripler for mm-waves is presented which consists of two inhomogeneously doped anti-serial Schottky diodes quasi-monolithically integrated into a microstrip circuit on quartz substrate. The multiplier combines the advantages of a varactor with symmetrical capacitance-voltage characteristic and the low leakage current of Schottky diodes [1]. Theoretically deduced design and optimisation criteria are proposed and first experimental results are given which show an rf-output power of 2 mW at 210 GHz.
{"title":"Frequency Tripler with Anti-Serial Schottky Diodes","authors":"M. Krach, J. Freyer, M. Claassen","doi":"10.1109/EUMA.2001.339005","DOIUrl":"https://doi.org/10.1109/EUMA.2001.339005","url":null,"abstract":"A frequency tripler for mm-waves is presented which consists of two inhomogeneously doped anti-serial Schottky diodes quasi-monolithically integrated into a microstrip circuit on quartz substrate. The multiplier combines the advantages of a varactor with symmetrical capacitance-voltage characteristic and the low leakage current of Schottky diodes [1]. Theoretically deduced design and optimisation criteria are proposed and first experimental results are given which show an rf-output power of 2 mW at 210 GHz.","PeriodicalId":207696,"journal":{"name":"2001 31st European Microwave Conference","volume":"45 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114099090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-10-01DOI: 10.1109/EUMA.2001.338931
C. Metz, E. Lissel, A. Jacob
High resolution and wide angle surveying capability are combined within a single planar antenna system using a modified Rotman-lens. While narrow beam mode is achieved by feeding the beamports of the lens, broad beams are realized by distributed sidewall feeding with secondary lenses. A Fresnel-lens-like delay network is introduced in the design to reduce the sidelobe level. Effects of fabrication tolerances are assessed. The concept is validated experimentally.
{"title":"Planar Multiresolutional Antenna for Automotive Radar","authors":"C. Metz, E. Lissel, A. Jacob","doi":"10.1109/EUMA.2001.338931","DOIUrl":"https://doi.org/10.1109/EUMA.2001.338931","url":null,"abstract":"High resolution and wide angle surveying capability are combined within a single planar antenna system using a modified Rotman-lens. While narrow beam mode is achieved by feeding the beamports of the lens, broad beams are realized by distributed sidewall feeding with secondary lenses. A Fresnel-lens-like delay network is introduced in the design to reduce the sidelobe level. Effects of fabrication tolerances are assessed. The concept is validated experimentally.","PeriodicalId":207696,"journal":{"name":"2001 31st European Microwave Conference","volume":"115 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114225943","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-10-01DOI: 10.1109/EUMA.2001.338980
K. Ng, B. Rejaei, N. Ormando, J. Burghartz
The generic stacked, bifilar, and nested coil designs of monolithic radio-frequency (RF) transformers on silicon are compared using the maximum available gain and the bandwidth as criteria of quality. As a result, the stacked-coil configuration has the best quality. Special attention is paid to ratioed stacked transformers which characteristic dependence on geometrical features is investigated and rules of design for effective turn ratio are presented. The results demonstrate the feasibility of using integrated ratioed stacked transformers in RF circuit design.
{"title":"Design and Optimization of Monolithic RF Transformers on Silicon","authors":"K. Ng, B. Rejaei, N. Ormando, J. Burghartz","doi":"10.1109/EUMA.2001.338980","DOIUrl":"https://doi.org/10.1109/EUMA.2001.338980","url":null,"abstract":"The generic stacked, bifilar, and nested coil designs of monolithic radio-frequency (RF) transformers on silicon are compared using the maximum available gain and the bandwidth as criteria of quality. As a result, the stacked-coil configuration has the best quality. Special attention is paid to ratioed stacked transformers which characteristic dependence on geometrical features is investigated and rules of design for effective turn ratio are presented. The results demonstrate the feasibility of using integrated ratioed stacked transformers in RF circuit design.","PeriodicalId":207696,"journal":{"name":"2001 31st European Microwave Conference","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132129732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-10-01DOI: 10.1109/EUMA.2001.339178
S. Malyshev, A. Chizh
Optical control of microwave circuits using photodiode junction capacitance variation due to optical illumination has some advantages such as simplicity and wide possibilities in application, high tuning range, accuracy, and speed. We have proposed to call as photovaractor the device which capacitance changes under illumination and which is used for optical control of microwave circuits. The numerical one-dimensional drift-diffusion model of the photovaractor based on the InP/InGaAs/InGaAsP heterostructure which is taking into account influence of the external electric circuit and parasitic elements was used to calculate the junction capacitance change under illumination. The experimental results and theoretical study of the photovaractor in the frequency range up to 3 GHz are presented.
{"title":"Modeling and Characterization of Photovaractor for Microwave Optoelectronics","authors":"S. Malyshev, A. Chizh","doi":"10.1109/EUMA.2001.339178","DOIUrl":"https://doi.org/10.1109/EUMA.2001.339178","url":null,"abstract":"Optical control of microwave circuits using photodiode junction capacitance variation due to optical illumination has some advantages such as simplicity and wide possibilities in application, high tuning range, accuracy, and speed. We have proposed to call as photovaractor the device which capacitance changes under illumination and which is used for optical control of microwave circuits. The numerical one-dimensional drift-diffusion model of the photovaractor based on the InP/InGaAs/InGaAsP heterostructure which is taking into account influence of the external electric circuit and parasitic elements was used to calculate the junction capacitance change under illumination. The experimental results and theoretical study of the photovaractor in the frequency range up to 3 GHz are presented.","PeriodicalId":207696,"journal":{"name":"2001 31st European Microwave Conference","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134238832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-10-01DOI: 10.1109/EUMA.2001.339112
M. Celuch-Marcysiak, W. Gwarek, M. Sypniewski
An original extension of the FDTD method to enthalpy-dependent media parameters is proposed. During one FDTD simulation, media parameters are repetitively modified in accordance with the extracted heating patterns. Generation of spurious modes is suppressed by converting E-, H- to D-, B- fields before media modification. The method correctly predicts run-away heating, diverging defrosting, and a variety of other effects, which until now could only be intuitively expected or experimentally observed. This opens new applications for the FDTD method in microwave power sectors including food industry, microwave oven design, and the newly emerging but highly competitive area of microwave chemistry and pharmacy.
{"title":"New Applications of the FDTD Method with Enthalpy-Dependent Media Parameters","authors":"M. Celuch-Marcysiak, W. Gwarek, M. Sypniewski","doi":"10.1109/EUMA.2001.339112","DOIUrl":"https://doi.org/10.1109/EUMA.2001.339112","url":null,"abstract":"An original extension of the FDTD method to enthalpy-dependent media parameters is proposed. During one FDTD simulation, media parameters are repetitively modified in accordance with the extracted heating patterns. Generation of spurious modes is suppressed by converting E-, H- to D-, B- fields before media modification. The method correctly predicts run-away heating, diverging defrosting, and a variety of other effects, which until now could only be intuitively expected or experimentally observed. This opens new applications for the FDTD method in microwave power sectors including food industry, microwave oven design, and the newly emerging but highly competitive area of microwave chemistry and pharmacy.","PeriodicalId":207696,"journal":{"name":"2001 31st European Microwave Conference","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132811239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-10-01DOI: 10.1109/EUMA.2001.338899
Sang-Young Yun, Se-Woong Jeong, Y. Jeong, C. Kim
In this paper, a new carrier complex power series for linearizing the distortion effects of a HPA (High Power Amplifier) is proposed. Amplitude (AM-to-AM) and phase(AM-to-PM) nonlinear characteristics of HPA are combined to generate carrier complex power series. Inverse carrier complex power series of predistortor is also proposed. The fabricated HPA of IMT- 2000 band with a measured gain and P1dB are 34.06dB and 35.4dBm. With proposed series, C/I (Carrier to Intermodulation) ratio of HPA is improved by 17.01dB(@Pout = 25.43dBm/tone) with 2-tone at 2.1375GHz and 2.1425GHz.
{"title":"A Design of Predistortive High Power Amplifier using Carrier Complex Power Series Analysis","authors":"Sang-Young Yun, Se-Woong Jeong, Y. Jeong, C. Kim","doi":"10.1109/EUMA.2001.338899","DOIUrl":"https://doi.org/10.1109/EUMA.2001.338899","url":null,"abstract":"In this paper, a new carrier complex power series for linearizing the distortion effects of a HPA (High Power Amplifier) is proposed. Amplitude (AM-to-AM) and phase(AM-to-PM) nonlinear characteristics of HPA are combined to generate carrier complex power series. Inverse carrier complex power series of predistortor is also proposed. The fabricated HPA of IMT- 2000 band with a measured gain and P1dB are 34.06dB and 35.4dBm. With proposed series, C/I (Carrier to Intermodulation) ratio of HPA is improved by 17.01dB(@Pout = 25.43dBm/tone) with 2-tone at 2.1375GHz and 2.1425GHz.","PeriodicalId":207696,"journal":{"name":"2001 31st European Microwave Conference","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134528138","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-10-01DOI: 10.1109/EUMA.2001.338934
J. Richter, A. Hofmann, L. Schmidt
Various design procedures for millimeter-wave dielectric lenses have been studied and compared with regard to the wide angle characteristics of the resulting lens contours. The paper describes the simulation and optimisation of the focusing properties of the lenses for large scanning angles using a hybrid method involving ray-tracing techniques and aperture field integration, the realisation of unzoned and zoned lenses and the farfield pattern measurements at 75 and 150 GHz. The theoretical and experimental results show that a scanning range of 40° (±20°) with very low beam degradation can be achieved.
{"title":"Dielectric Wide Angle Lenses for Millimeter-Wave Focal Plane Imaging","authors":"J. Richter, A. Hofmann, L. Schmidt","doi":"10.1109/EUMA.2001.338934","DOIUrl":"https://doi.org/10.1109/EUMA.2001.338934","url":null,"abstract":"Various design procedures for millimeter-wave dielectric lenses have been studied and compared with regard to the wide angle characteristics of the resulting lens contours. The paper describes the simulation and optimisation of the focusing properties of the lenses for large scanning angles using a hybrid method involving ray-tracing techniques and aperture field integration, the realisation of unzoned and zoned lenses and the farfield pattern measurements at 75 and 150 GHz. The theoretical and experimental results show that a scanning range of 40° (±20°) with very low beam degradation can be achieved.","PeriodicalId":207696,"journal":{"name":"2001 31st European Microwave Conference","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132944885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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