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Metal amides: versatile dopant precursors for electronic materials 金属酰胺:电子材料的多功能掺杂前体
Advanced Materials for Optics and Electronics
Pub Date : 2000-05-01 DOI: 10.1002/1099-0712(200005/10)10:3/5<213::AID-AMO419>3.0.CO;2-#
O. Just, W. S. Rees
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引用次数: 9
Ultraviolet assisted injection liquid source chemical vapour deposition (UVILS‐CVD) of tantalum pentoxide 紫外辅助注射液源化学气相沉积(UVILS - CVD)的研究
Advanced Materials for Optics and Electronics
Pub Date : 2000-05-01 DOI: 10.1002/1099-0712(200005/10)10:3/5<115::AID-AMO418>3.0.CO;2-#
P. Kelly, M. Mooney, J. T. Beechinor, B. O’Sullivan, P. Hurley, G. Crean, J. Zhang, I. Boyd, M. Paillous, C. Jiménez, J. Sénateur
Ultraviolet assisted injection liquid source chemical vapour deposition (UVILS-CVD) emerged during 1999 as a new low-temperature dielectric deposition system combining earlier developments in injection liquid source CVD and excimer lamp assisted CVD. While the UVILS-CVD technique is still at an early stage of development, the reported results in the literature indicate that UVILS-CVD is a promising technique for the controlled deposition of ultra-thin high-k metal-oxide dielectrics for deep sub-micron CMOS devices at temperatures as low as 350 °C. As-deposited UVILS-CVD tantalum pentoxide dielectrics have been reported with refractive index values in the range 2.02 – 2.16, conventional capacitance – voltage characteristics, dielectric constants in the range 18 – 24, fixed oxide charge content of less than 5×1010 cm−1 and breakdown fields higher than 2 MV·cm−1. Annealing reduces the leakage currents by several orders of magnitude. The main characteristics of the UVILS-CVD technique reported to date in the literature are reviewed. Copyright © 2000 John Wiley & Sons, Ltd.
紫外辅助注入液源化学气相沉积(UVILS-CVD)是一种结合了注入液源化学气相沉积和准分子灯辅助化学气相沉积的新型低温介质沉积系统，于1999年兴起。虽然UVILS-CVD技术仍处于早期发展阶段，但文献报道的结果表明，UVILS-CVD是一种很有前途的技术，可以在低至350°C的温度下控制沉积用于深亚微米CMOS器件的超薄高k金属氧化物介电体。据报道，沉积的UVILS-CVD五氧化二钽电介质折射率在2.02 ~ 2.16之间，具有常规的电容-电压特性，介电常数在18 ~ 24之间，固定氧化物电荷含量小于5×1010 cm−1，击穿场高于2 MV·cm−1。退火使漏电流降低了几个数量级。综述了迄今为止文献报道的UVILS-CVD技术的主要特点。版权所有©2000约翰威利父子有限公司
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引用次数: 5
Recent developments in the MOCVD of electronic materials 电子材料MOCVD的最新进展
Advanced Materials for Optics and Electronics
Pub Date : 2000-05-01 DOI: 10.1002/1099-0712(200005/10)10:3/5<91::AID-AMO421>3.0.CO;2-#
A. C. Jones
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引用次数: 5
On the thermal behaviour and thermo-oxidative stability of liquid crystalline triphenylene compounds 液晶三苯基化合物的热行为和热氧化稳定性
Advanced Materials for Optics and Electronics
Pub Date : 1999-03-01 DOI: 10.1002/(SICI)1099-0712(199903/04)9:2<55::AID-AMO366>3.0.CO;2-#
B. Schartel, A. Kettner, R. Kunze, J. Wendorff, M. Hennecke
Columnar discotic materials are considered for applications in the area of photoconductivity and light-emitting diodes. A major requirement is their stability at elevated temperatures and in the presence of oxygen. The thermal and thermo-oxidative behaviour of discotic triphenylene derivatives was investigated by us using various methods, in particular by chemiluminescence (CL), UV-vis absorption spectroscopy and in situ thermogravimetry–mass spectroscopy (TG–MS). Various degradation processes are described for increasing temperature, and their influences on functional properties are discussed. Copyright © 1999 John Wiley & Sons, Ltd.
柱状盘状材料被认为是光导和发光二极管领域的应用。一个主要的要求是它们在高温和氧气存在下的稳定性。采用化学发光(CL)、紫外-可见吸收光谱(UV-vis)和原位热重质谱(TG-MS)等方法研究了盘状三苯衍生物的热氧化行为。描述了温度升高的各种降解过程，并讨论了它们对功能性能的影响。版权所有©1999 John Wiley & Sons, Ltd
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引用次数: 6
Influence of polyaniline on electrode materials 聚苯胺对电极材料的影响
Advanced Materials for Optics and Electronics
Pub Date : 1998-11-01 DOI: 10.1002/(SICI)1099-0712(199811/12)8:6<303::AID-AMO358>3.0.CO;2-#
E. Frąckowiak, K. Jurewicz
Polyaniline (PANI) has been used for modification of the electrochemical behaviour of a carbon fluoride ((CFx)n) cathode in a lithium cell. PANI and (CFx)n powders were carefully mixed and the electrochemical properties and kinetic parameters of the composite (CFx)n–PANI cathode were evaluated by galvanostatic and potentiodynamic techniques. An increase in exchange current has been found for electrodes with addition of polyaniline in the form of emeraldine base (EB). During the reduction process of carbon fluoride using 1 M lithium perchlorate solution in organic solvent, the ternary intercalation compound CLixF is formed and then irreversibly decomposed into carbon and lithium fluoride. The insertion of lithium cations into the (CFx)n layered structure is diffusionally controlled, hence improvement in electronic properties of this fluoride material by the presence of conducting PANI chains and enhancement of discharge performance were found for 25% addition of PANI. Copyright © 1998 John Wiley & Sons, Ltd.
聚苯胺(PANI)用于改性锂电池中氟化碳(CFx)n)阴极的电化学行为。将聚苯胺和(CFx)n粉末仔细混合，采用恒流和动电位技术对复合(CFx)n -聚苯胺阴极的电化学性能和动力学参数进行了评价。以祖母绿碱(EB)形式加入聚苯胺后，电极的交流电流增加。1 M高氯酸锂溶液在有机溶剂中还原氟化碳的过程中，形成三元插层化合物CLixF，然后不可逆地分解为碳和氟化锂。锂离子在(CFx)n层状结构中的插入受到扩散控制，因此发现导电聚苯胺链的存在改善了这种氟化材料的电子性能，并且发现添加25%的聚苯胺可以增强放电性能。版权所有©1998 John Wiley & Sons, Ltd
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引用次数: 2
Optical spectra of C60 and C70 complexes: their similarities and differences C60和C70配合物的光谱:异同
Advanced Materials for Optics and Electronics
Pub Date : 1998-09-01 DOI: 10.1002/(SICI)1099-0712(1998090)8:5<215::AID-AMO338>3.0.CO;2-#
A. Graja, J. Farges
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引用次数: 12
Stoichiometric deviations along an ingot of CuGaSe2 CuGaSe2铸锭的化学计量偏差
Advanced Materials for Optics and Electronics
Pub Date : 1998-05-01 DOI: 10.1002/(SICI)1099-0712(199805/06)8:3<147::AID-AMO344>3.0.CO;2-#
T. Martı́n, J. Merino, J. L. M. Vidales, M. León, F. Rueda, R. Díaz
The dependence of the structural parameters on compositional deviations of CuGaSe2 has been studied. These deviations have been induced along an ingot by a single fusion of the components at 1150 °C and subsequent slow cooling in a stationary ampoule in a vertical furnace. All along the sample a single chalcopyrite phase is present and a compositional gradient along the ingot was found by energy-dispersive analysis of X-rays (EDAX) measurements, the upper part being rich in Ga (series B) and the lower part in Cu (series A), with Cu/Ga ratios of 0·95 and 1·1 respectively. A hypothesis of the existence of two phases in the melt is proposed to explain these facts. The unit cell parameters, anion displacement and Cu and Ga occupation numbers in their sublattices were analysed by X-ray powder diffraction and Rietveld refinement methods. In series A the occupation numbers are near stoichiometry, while in series B a Cu defect appears. In both series, changes in unit cell parameter are related to changes in Cu content, suggesting the presence of a fraction of Cu ions either as interstitials or at Ga sites when Cu is in excess, or of Cu vacancies in its sublattice when there is a Cu deficiency. © 1998 John Wiley & Sons, Ltd.
研究了CuGaSe2的结构参数与组成偏差的关系。这些偏差是通过在1150°C下对组件进行一次熔合，然后在垂直炉的固定安瓿中缓慢冷却而沿着铸锭产生的。通过x射线能谱分析(EDAX)发现，样品沿铸锭方向存在单一的黄铜矿相，上部富Ga (B系)，下部富Cu (a系)，Cu/Ga比值分别为0.95和1.1。提出了熔体中存在两相的假设来解释这些事实。用x射线粉末衍射和Rietveld精化方法分析了其亚晶格的单元胞参数、阴离子位移和Cu、Ga占据数。在系列A中，占位数接近化学计量，而在系列B中，出现了Cu缺陷。在这两个系列中，单元胞参数的变化与Cu含量的变化有关，这表明当Cu过量时，部分Cu离子作为间隙或在Ga位点存在，或者当Cu缺乏时，其亚晶格中存在Cu空位。©1998 John Wiley & Sons, Ltd
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引用次数: 5
Molecular image‐processing devices based on chemical reaction systems. 6: Processing half‐tone images and neural network architecture of excitable media 基于化学反应系统的分子图像处理装置。6:半色调图像处理及可兴奋介质的神经网络架构
Advanced Materials for Optics and Electronics
Pub Date : 1997-07-01 DOI: 10.1002/(SICI)1099-0712(199707)7:4<171::AID-AMO300>3.0.CO;2-#
N. Rambidi, A. V. Maximychev
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引用次数: 10
Optical Constants of Polycrystalline Cd1xZnxTe Thin Films by Spectroscopic Ellipsometry 多晶Cd1xZnxTe薄膜的椭偏光谱光学常数
Advanced Materials for Optics and Electronics
Pub Date : 1997-05-01 DOI: 10.1002/(SICI)1099-0712(199705)7:3<109::AID-AMO296>3.3.CO;2-W
K. Rao, O. Hussain, B. Naidu, P. Reddy
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引用次数: 2
Red shift in optical absorption of erbium and dysprosium diphthalocyanine thin films on exposure to chlorine 二酞菁铒和镝薄膜暴露于氯时光学吸收的红移
Advanced Materials for Optics and Electronics
Pub Date : 1996-07-01 DOI: 10.1002/(SICI)1099-0712(199607)6:4<203::AID-AMO241>3.0.CO;2-#
A. Krier, T. Parr, K. Davidson, R. A. Collins
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引用次数: 2
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