Pub Date : 2019-06-03DOI: 10.1109/PEDG.2019.8807473
Cheng Deng, Jiankun Lv
Multi-component resonant converter is a popular circuit due to its high efficiency and low electromagnetic interference, especially for high frequency applications field. Since there are the discrete passive components occupy the significant space, the integration technique with flexible multilayer film (FMLF) is an effective solution to reduce the size and height. With this technique, a novel passive integration device is proposed for a multi-component resonant converter. The structure of the integrated unit is introduced, the design of the parameters is presented and the flux analysis is provided. The simulation results based on Maxwell/Ansoft prove the validity and feasibility of the proposed ideas, and a prototype is built for a 200W-100kHz multi-component resonant converter.
{"title":"A Novel Passive Integrated Unit for Multi-Component Resonant Converter","authors":"Cheng Deng, Jiankun Lv","doi":"10.1109/PEDG.2019.8807473","DOIUrl":"https://doi.org/10.1109/PEDG.2019.8807473","url":null,"abstract":"Multi-component resonant converter is a popular circuit due to its high efficiency and low electromagnetic interference, especially for high frequency applications field. Since there are the discrete passive components occupy the significant space, the integration technique with flexible multilayer film (FMLF) is an effective solution to reduce the size and height. With this technique, a novel passive integration device is proposed for a multi-component resonant converter. The structure of the integrated unit is introduced, the design of the parameters is presented and the flux analysis is provided. The simulation results based on Maxwell/Ansoft prove the validity and feasibility of the proposed ideas, and a prototype is built for a 200W-100kHz multi-component resonant converter.","PeriodicalId":248726,"journal":{"name":"2019 IEEE 10th International Symposium on Power Electronics for Distributed Generation Systems (PEDG)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115304632","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-03DOI: 10.1109/PEDG.2019.8807723
L. Zhu, Bin Zhang
In many occasions, it is necessary to remotely adjust the brightness of the LED and monitor the working state of the LED driving power. Aiming at this goal, this paper designs an LED driver with adjustable output current. The main structure of the circuit adopts APFC+LLC. The driving power is internally equipped with a power measurement module and a relay switch module, and the external power supply is equipped with wireless control module. It can realize adjust the LED light, and can also monitor the power consumption, input voltage, input current, power factor, output voltage and output current of the driving power supply.
{"title":"An LED Driver with Adjustable Output Current","authors":"L. Zhu, Bin Zhang","doi":"10.1109/PEDG.2019.8807723","DOIUrl":"https://doi.org/10.1109/PEDG.2019.8807723","url":null,"abstract":"In many occasions, it is necessary to remotely adjust the brightness of the LED and monitor the working state of the LED driving power. Aiming at this goal, this paper designs an LED driver with adjustable output current. The main structure of the circuit adopts APFC+LLC. The driving power is internally equipped with a power measurement module and a relay switch module, and the external power supply is equipped with wireless control module. It can realize adjust the LED light, and can also monitor the power consumption, input voltage, input current, power factor, output voltage and output current of the driving power supply.","PeriodicalId":248726,"journal":{"name":"2019 IEEE 10th International Symposium on Power Electronics for Distributed Generation Systems (PEDG)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122352499","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-03DOI: 10.1109/PEDG.2019.8807722
Yanlin Zhu, Shuhuai Shi, Sheng Cheng, R. Ding, Xiaotong Du, F. Zhuo
With the increasing demand of electricity, AC and DC hybrid distribution network comes to be an effective solution in the near future. In the DC power transmission and distribution system, DC/DC converter is required for the interconnection of HVDC, MVDC and LVDC grids. Recent researches focus on face-to-face DC/DC converters based on cascaded DAB and MMC topology. This paper proposes a multi-port MMC based DC/DC converter topology, which is suitable for interconnection of DC grids with different voltage levels. The corresponding modulation and control strategy of this converter, which can transform the DC voltage at DC sides of the converter, are illustrated. Simulation and experimental results validates the modulation and control strategy of the proposed multi-port DC/DC converter topology.
{"title":"Topology, Modulation and Control Strategy of a Multi-port DC/DC Converter based on Modular Multilevel Converter","authors":"Yanlin Zhu, Shuhuai Shi, Sheng Cheng, R. Ding, Xiaotong Du, F. Zhuo","doi":"10.1109/PEDG.2019.8807722","DOIUrl":"https://doi.org/10.1109/PEDG.2019.8807722","url":null,"abstract":"With the increasing demand of electricity, AC and DC hybrid distribution network comes to be an effective solution in the near future. In the DC power transmission and distribution system, DC/DC converter is required for the interconnection of HVDC, MVDC and LVDC grids. Recent researches focus on face-to-face DC/DC converters based on cascaded DAB and MMC topology. This paper proposes a multi-port MMC based DC/DC converter topology, which is suitable for interconnection of DC grids with different voltage levels. The corresponding modulation and control strategy of this converter, which can transform the DC voltage at DC sides of the converter, are illustrated. Simulation and experimental results validates the modulation and control strategy of the proposed multi-port DC/DC converter topology.","PeriodicalId":248726,"journal":{"name":"2019 IEEE 10th International Symposium on Power Electronics for Distributed Generation Systems (PEDG)","volume":"1763 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129500344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Insulated gate bipolar transistor (IGBT) open-circuit fault in the modular multilevel converter (MMC) can lead to waveform distortions, overcurrent and overvoltage problems, thus, affects the reliability of the converter system. This paper proposes an IGBT open-circuit fault diagnosis strategy for the MMC with reduced-number of voltage sensor measuring technique. The open-circuit fault can be isolated within several control cycles. The proposed method is applicable to both single and multiple faults conditions. Simulation results verify the effectiveness of the proposed strategy.
{"title":"IGBT Open-Circuit Fault Diagnosis for Modular Multilevel Converter With Reduced-Number of Voltage Sensor Measuring Technique","authors":"Xingxing Chen, Jinjun Liu, Zhifeng Deng, Shuguang Song, Shaodi Ouyang","doi":"10.1109/PEDG.2019.8807574","DOIUrl":"https://doi.org/10.1109/PEDG.2019.8807574","url":null,"abstract":"Insulated gate bipolar transistor (IGBT) open-circuit fault in the modular multilevel converter (MMC) can lead to waveform distortions, overcurrent and overvoltage problems, thus, affects the reliability of the converter system. This paper proposes an IGBT open-circuit fault diagnosis strategy for the MMC with reduced-number of voltage sensor measuring technique. The open-circuit fault can be isolated within several control cycles. The proposed method is applicable to both single and multiple faults conditions. Simulation results verify the effectiveness of the proposed strategy.","PeriodicalId":248726,"journal":{"name":"2019 IEEE 10th International Symposium on Power Electronics for Distributed Generation Systems (PEDG)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116487450","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-03DOI: 10.1109/PEDG.2019.8807678
Y. Zhou, Shuo Li, Kai Wang
Hybrid supercapacitors not only have the characteristics of high current fast charging and discharging of traditional capacitors, but also have the energy storage characteristics of batteries. They are widely used in various fields and are hotspots in energy technology research. In this paper, the hybrid supercapacitor with antimony pentoxide/cerium oxide composite electrode is studied, and the influence mechanism of temperature, charge and discharge voltage, current, depth of discharge and vibration on its degradation is studied in depth. A new model of performance degradation mechanism of hybrid supercapacitors is proposed. The Model-Extreme Learning Machine (MELM) is used to identify the above models online. The specific steps are as follows: the above model is integrated into the hidden layer in the extreme learning machine, and then the weight of the hidden layer in the extreme learning machine is identified by using the recursive least squares method, and then the online parameter identification of the above model can be completed. The aging degree of the supercapacitor is monitored by ESR and C to accurately estimate the remaining service life. The experimental results show that the model has higher recognition accuracy and better prediction effect.
{"title":"Life Prediction of Hybrid Supercapacitor Based on Improved Model-Extreme Learning Machine","authors":"Y. Zhou, Shuo Li, Kai Wang","doi":"10.1109/PEDG.2019.8807678","DOIUrl":"https://doi.org/10.1109/PEDG.2019.8807678","url":null,"abstract":"Hybrid supercapacitors not only have the characteristics of high current fast charging and discharging of traditional capacitors, but also have the energy storage characteristics of batteries. They are widely used in various fields and are hotspots in energy technology research. In this paper, the hybrid supercapacitor with antimony pentoxide/cerium oxide composite electrode is studied, and the influence mechanism of temperature, charge and discharge voltage, current, depth of discharge and vibration on its degradation is studied in depth. A new model of performance degradation mechanism of hybrid supercapacitors is proposed. The Model-Extreme Learning Machine (MELM) is used to identify the above models online. The specific steps are as follows: the above model is integrated into the hidden layer in the extreme learning machine, and then the weight of the hidden layer in the extreme learning machine is identified by using the recursive least squares method, and then the online parameter identification of the above model can be completed. The aging degree of the supercapacitor is monitored by ESR and C to accurately estimate the remaining service life. The experimental results show that the model has higher recognition accuracy and better prediction effect.","PeriodicalId":248726,"journal":{"name":"2019 IEEE 10th International Symposium on Power Electronics for Distributed Generation Systems (PEDG)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124313413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-03DOI: 10.1109/PEDG.2019.8807482
Zuoyu Wei, Kefan Yu, Yuguo Li, Hao Yi, F. Zhuo, Feng Wang
In recent years, the technology of wide bandgap devices has developed rapidly and its commercialization also getting higher and higher. Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFETs) are gradually replacing traditional silicon-based devices such as IGBTs in high-voltage, high-frequency, high-temperature applications due to their higher breakdown filed strength, lower switching losses, better thermal stability and thermal conductivity [1]. Of course, this also puts higher requirements and challenges on the drive design of SiC MOSFETs. The gate drivers for conventional silicon-based devices cannot be directly applied to SiC MOSFETs [2]. And the mature silicon carbide driver products on the market are few and expensive. Therefore, a general drive design for discrete SiC MOSFETs is proposed here, with high switching frequency, reliable fault isolation, fast fault detection and very small size. It also clarifies the key points and important parameter calculation criteria of the proposed drive circuit, then builds a double pulse test (DPT) platform to evaluate the performance of the gate driver board.
{"title":"Design and Evaluation of a High Performance Silicon Carbide MOSFET Driver","authors":"Zuoyu Wei, Kefan Yu, Yuguo Li, Hao Yi, F. Zhuo, Feng Wang","doi":"10.1109/PEDG.2019.8807482","DOIUrl":"https://doi.org/10.1109/PEDG.2019.8807482","url":null,"abstract":"In recent years, the technology of wide bandgap devices has developed rapidly and its commercialization also getting higher and higher. Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFETs) are gradually replacing traditional silicon-based devices such as IGBTs in high-voltage, high-frequency, high-temperature applications due to their higher breakdown filed strength, lower switching losses, better thermal stability and thermal conductivity [1]. Of course, this also puts higher requirements and challenges on the drive design of SiC MOSFETs. The gate drivers for conventional silicon-based devices cannot be directly applied to SiC MOSFETs [2]. And the mature silicon carbide driver products on the market are few and expensive. Therefore, a general drive design for discrete SiC MOSFETs is proposed here, with high switching frequency, reliable fault isolation, fast fault detection and very small size. It also clarifies the key points and important parameter calculation criteria of the proposed drive circuit, then builds a double pulse test (DPT) platform to evaluate the performance of the gate driver board.","PeriodicalId":248726,"journal":{"name":"2019 IEEE 10th International Symposium on Power Electronics for Distributed Generation Systems (PEDG)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125047398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-03DOI: 10.1109/PEDG.2019.8807573
Yongbin Jiang, Min Wu, Zexian Zeng, Jing Sun, Laili Wang, Yue Wang
In this paper, first, to realize the constant current charging for EV’s Battery and ZVS operation of all the switches in wireless power transfer system (WPTS) simultaneously, a novel variable angle phase shift control strategy (VAPSC) is proposed only by controlling the active rectifier (AR). Second, based on VAPSC, the ac equivalent impedance and the conditions for achieving ZVS are derived in detail. Third, according to the characteristics of constant current charging and the conditions for achieving ZVS, the optimal power angle range (OPAR) is obtained. Meanwhile, the control structure based on VAPSC is presented to make the system work accurately at any points of OPAR by adjusting the zero voltage switching angle (ZVSA). Finally, a 500W WPTS is built to verify the correctness of theoretical analysis and the effectiveness of VAPSC. The maximum transfer efficiency can achieve 94.5% with k = 0.2 near the maximum transfer power.
{"title":"Variable Angle Phase Shift Control in Series-Series Type Wireless Power Transfer System","authors":"Yongbin Jiang, Min Wu, Zexian Zeng, Jing Sun, Laili Wang, Yue Wang","doi":"10.1109/PEDG.2019.8807573","DOIUrl":"https://doi.org/10.1109/PEDG.2019.8807573","url":null,"abstract":"In this paper, first, to realize the constant current charging for EV’s Battery and ZVS operation of all the switches in wireless power transfer system (WPTS) simultaneously, a novel variable angle phase shift control strategy (VAPSC) is proposed only by controlling the active rectifier (AR). Second, based on VAPSC, the ac equivalent impedance and the conditions for achieving ZVS are derived in detail. Third, according to the characteristics of constant current charging and the conditions for achieving ZVS, the optimal power angle range (OPAR) is obtained. Meanwhile, the control structure based on VAPSC is presented to make the system work accurately at any points of OPAR by adjusting the zero voltage switching angle (ZVSA). Finally, a 500W WPTS is built to verify the correctness of theoretical analysis and the effectiveness of VAPSC. The maximum transfer efficiency can achieve 94.5% with k = 0.2 near the maximum transfer power.","PeriodicalId":248726,"journal":{"name":"2019 IEEE 10th International Symposium on Power Electronics for Distributed Generation Systems (PEDG)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129442922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-03DOI: 10.1109/PEDG.2019.8807684
Yafei Chen, Hailong Zhang, Chang-Soo Shin, Kyung-Ho Seo, Sung‐Jun Park, Dong-Hee Kim
In inductive power transfer (IPT) systems, the structures and parameters of the resonance compensation topology are the main factors which determine the system characteristics. As the representative of conventional classical compensation topology and high-order composite compensation topology, series-series (S-S) and inductance-double capacitances-series (LCC-S) have been widely studied and applied to wireless charging for electric vehicles (EVs). In this paper, the properties of the two resonance topologies are compared comprehensively under the same conditions, the comparisons include influences of zero phase angle (ZPA) frequency and load variation on transmission performance, the characteristics of system voltage conversion ratio and input impedance angle under the condition of ZPA frequency and load variation. To complement the comparison and analysis, a 2kW level comparative experiments were carried out, it can be concluded that LCC-S is suitable for low power applications and S-S is suitable for high power applications. S-S has higher load sensitivity to the output characteristics than LCC-S.
{"title":"A Comparative Study of S-S and LCC-S Compensation Topology of Inductive Power Transfer Systems for EV Chargers","authors":"Yafei Chen, Hailong Zhang, Chang-Soo Shin, Kyung-Ho Seo, Sung‐Jun Park, Dong-Hee Kim","doi":"10.1109/PEDG.2019.8807684","DOIUrl":"https://doi.org/10.1109/PEDG.2019.8807684","url":null,"abstract":"In inductive power transfer (IPT) systems, the structures and parameters of the resonance compensation topology are the main factors which determine the system characteristics. As the representative of conventional classical compensation topology and high-order composite compensation topology, series-series (S-S) and inductance-double capacitances-series (LCC-S) have been widely studied and applied to wireless charging for electric vehicles (EVs). In this paper, the properties of the two resonance topologies are compared comprehensively under the same conditions, the comparisons include influences of zero phase angle (ZPA) frequency and load variation on transmission performance, the characteristics of system voltage conversion ratio and input impedance angle under the condition of ZPA frequency and load variation. To complement the comparison and analysis, a 2kW level comparative experiments were carried out, it can be concluded that LCC-S is suitable for low power applications and S-S is suitable for high power applications. S-S has higher load sensitivity to the output characteristics than LCC-S.","PeriodicalId":248726,"journal":{"name":"2019 IEEE 10th International Symposium on Power Electronics for Distributed Generation Systems (PEDG)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128263013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-03DOI: 10.1109/PEDG.2019.8807629
Xuhui Wang, Jinwei Qi, Mingchao Yang
This paper evaluates the thermal characterization of late generation SiC schottky diodes for application of power electronics charging and operation systems. 600V/650V SiC Diodes are tested from 3 well-known manufactures: Wolfspeed, Infineon and Rohm. A comprehensive study is performed for a wide temperature range from 20°C (room temperature) up to 500°C, aiming to find the absolute maximum parameters of SiC schottky diodes at extremely high temperature environments. Both static and dynamic characterization are evaluated, which exhibit the performance and reliability of SiC schottky diodes for high temperature application conditions.
{"title":"Characterization of 600V/650V Commercial SiC Schottky Diodes at Extremely High Temperatures","authors":"Xuhui Wang, Jinwei Qi, Mingchao Yang","doi":"10.1109/PEDG.2019.8807629","DOIUrl":"https://doi.org/10.1109/PEDG.2019.8807629","url":null,"abstract":"This paper evaluates the thermal characterization of late generation SiC schottky diodes for application of power electronics charging and operation systems. 600V/650V SiC Diodes are tested from 3 well-known manufactures: Wolfspeed, Infineon and Rohm. A comprehensive study is performed for a wide temperature range from 20°C (room temperature) up to 500°C, aiming to find the absolute maximum parameters of SiC schottky diodes at extremely high temperature environments. Both static and dynamic characterization are evaluated, which exhibit the performance and reliability of SiC schottky diodes for high temperature application conditions.","PeriodicalId":248726,"journal":{"name":"2019 IEEE 10th International Symposium on Power Electronics for Distributed Generation Systems (PEDG)","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121718980","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-03DOI: 10.1109/PEDG.2019.8807453
P. Lingom, J. Song-Manguelle, J. Nyobe-Yome, D. L. Mon‐Nzongo, T. Jin, M. Doumbia
This paper proposes a modified carrier-based PWM method for multilevel converters using a single-carrier. The existing scalar PWM strategies are based on the comparison between a sinusoidal reference waveform and multiple carriers on each phase. The major drawback of this approach is an increased number of carriers required when the output voltage of the multilevel converter increases; usually, n-1 carriers are needed for n-level converters. Consequently, higher computation effort is required, which increases the complexity of their practical implementation on low-cost digital control boards. To reduce the complexity of the implementation of the modulation strategy, a new single-carrier PWM strategy for multi-level converters is proposed in this paper. Only one carrier is required regardless of the number of output voltage levels to be generated by the converter. With simple manipulations, the sinusoidal references are transformed to fit the range of the triangle carrier; this is valid with and without an injected homopolar component. The simulation results show that the new strategy is theoretically equivalent to a multi-carrier PD-PWM method.The effectiveness of the proposed modulation scheme is applied to the 7-level and 11-level cascaded multilevel converters and successfully simulated at different operating points. Also, similar simulations are performed on a 5-level Neutral-Point-Clamped converter to demonstrate its wide application range
{"title":"A Single-Carrier PWM Method for Multilevel Converters","authors":"P. Lingom, J. Song-Manguelle, J. Nyobe-Yome, D. L. Mon‐Nzongo, T. Jin, M. Doumbia","doi":"10.1109/PEDG.2019.8807453","DOIUrl":"https://doi.org/10.1109/PEDG.2019.8807453","url":null,"abstract":"This paper proposes a modified carrier-based PWM method for multilevel converters using a single-carrier. The existing scalar PWM strategies are based on the comparison between a sinusoidal reference waveform and multiple carriers on each phase. The major drawback of this approach is an increased number of carriers required when the output voltage of the multilevel converter increases; usually, n-1 carriers are needed for n-level converters. Consequently, higher computation effort is required, which increases the complexity of their practical implementation on low-cost digital control boards. To reduce the complexity of the implementation of the modulation strategy, a new single-carrier PWM strategy for multi-level converters is proposed in this paper. Only one carrier is required regardless of the number of output voltage levels to be generated by the converter. With simple manipulations, the sinusoidal references are transformed to fit the range of the triangle carrier; this is valid with and without an injected homopolar component. The simulation results show that the new strategy is theoretically equivalent to a multi-carrier PD-PWM method.The effectiveness of the proposed modulation scheme is applied to the 7-level and 11-level cascaded multilevel converters and successfully simulated at different operating points. Also, similar simulations are performed on a 5-level Neutral-Point-Clamped converter to demonstrate its wide application range","PeriodicalId":248726,"journal":{"name":"2019 IEEE 10th International Symposium on Power Electronics for Distributed Generation Systems (PEDG)","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122900667","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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