Pub Date : 2016-09-29DOI: 10.1109/RFIT.2016.7578167
Yi-Lin Tsai, Jian-You Chen, Chun-Yu Lin, B. Wang, Tzu-Yu Yeh, Tsung-Hsien Lin
A 400-MHz 10-Mbps differential BPSK (D-BPSK) transceiver is presented. The receiver adopts a dynamic phase-to-amplitude conversion technique, which converts signal phase transition to amplitude variation. In the transmitter, phase modulated signal is realized by edge combining appropriate phases via an array of phase MUXs. Fabricated in 0.18-μm CMOS process, the receiver accomplishes -63dBm sensitivity at 0.1% BER and draws 1.77mW, from 0.9-V supply. The TX draws 0.51mW at -15dBm output power. The overall link efficiency is 228pJ/b.
{"title":"An energy-efficient differential-BPSK transceiver for IoT applications","authors":"Yi-Lin Tsai, Jian-You Chen, Chun-Yu Lin, B. Wang, Tzu-Yu Yeh, Tsung-Hsien Lin","doi":"10.1109/RFIT.2016.7578167","DOIUrl":"https://doi.org/10.1109/RFIT.2016.7578167","url":null,"abstract":"A 400-MHz 10-Mbps differential BPSK (D-BPSK) transceiver is presented. The receiver adopts a dynamic phase-to-amplitude conversion technique, which converts signal phase transition to amplitude variation. In the transmitter, phase modulated signal is realized by edge combining appropriate phases via an array of phase MUXs. Fabricated in 0.18-μm CMOS process, the receiver accomplishes -63dBm sensitivity at 0.1% BER and draws 1.77mW, from 0.9-V supply. The TX draws 0.51mW at -15dBm output power. The overall link efficiency is 228pJ/b.","PeriodicalId":273434,"journal":{"name":"2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"144 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132692650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-09-29DOI: 10.1109/RFIT.2016.7578217
Zipeng Chen, Xinwang Zhang, Zheng Song, Wen Jia, B. Chi
A 1.0-5.0 GHz tunable low-noise amplifier (LNA) in 65 nm is presented, which employs dual feedback common gate (CG) topology to reduce the noise figure (NF) and out-of-band interference. The amplitude-detection-based automatic frequency calibration technique is proposed to overcome the effects of the process variation with little extra cost. The measured average frequency error after the calibration is less than 4.4 MHz. The proposed dual feedback CG-LNA achieves the power gain of 19~26 dB. The input matching S11 is -18 dB~-5 dB, and the NF is 2.4~3.8 dB. The chip consumes 10.06 mA from one 1.2 V power supply, with 0.7 mm2 die area consumption.
{"title":"A 1.0–5.0GHz tunable LNA with automatic frequency calibration in 65 nm CMOS","authors":"Zipeng Chen, Xinwang Zhang, Zheng Song, Wen Jia, B. Chi","doi":"10.1109/RFIT.2016.7578217","DOIUrl":"https://doi.org/10.1109/RFIT.2016.7578217","url":null,"abstract":"A 1.0-5.0 GHz tunable low-noise amplifier (LNA) in 65 nm is presented, which employs dual feedback common gate (CG) topology to reduce the noise figure (NF) and out-of-band interference. The amplitude-detection-based automatic frequency calibration technique is proposed to overcome the effects of the process variation with little extra cost. The measured average frequency error after the calibration is less than 4.4 MHz. The proposed dual feedback CG-LNA achieves the power gain of 19~26 dB. The input matching S11 is -18 dB~-5 dB, and the NF is 2.4~3.8 dB. The chip consumes 10.06 mA from one 1.2 V power supply, with 0.7 mm2 die area consumption.","PeriodicalId":273434,"journal":{"name":"2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123493448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-09-29DOI: 10.1109/RFIT.2016.7578168
N. Kosaka, S. Fujiwara, A. Okamura, K. Chomei, Y. Sasaki, K. Horiguchi, H. Katayama, A. Inoue
A plastic packaged GaN HEMT is presented for 3.5-GHz-band LTE small-cell base-station applications. A pair of GaN HEMT dies and MIM capacitors is assembled in the package for Doherty amplifier use. Optimized drain bonding wire length enhances high efficiency operation. The input prematching with the MIM capacitors suppresses insertion loss and improves power gain. Measurements of a single-chain amplifier using the GaN HEMT show a high drain efficiency of 66.3% and a high power gain of 16.2 dB at 3.5 GHz, regardless of plastic packaging. A Doherty amplifier demonstration with the GaN HEMT shows a drain efficiency as high as 51.2% and an output power of 36.0 dBm at ACLR of -50 dBc. This is the first demonstration of a plastic packaged GaN HEMT Doherty amplifier in the 3.5-GHz band.
{"title":"A high-efficiency and high-gain, plastic packaged GaN HEMT for 3.5-GHz-band LTE base stations","authors":"N. Kosaka, S. Fujiwara, A. Okamura, K. Chomei, Y. Sasaki, K. Horiguchi, H. Katayama, A. Inoue","doi":"10.1109/RFIT.2016.7578168","DOIUrl":"https://doi.org/10.1109/RFIT.2016.7578168","url":null,"abstract":"A plastic packaged GaN HEMT is presented for 3.5-GHz-band LTE small-cell base-station applications. A pair of GaN HEMT dies and MIM capacitors is assembled in the package for Doherty amplifier use. Optimized drain bonding wire length enhances high efficiency operation. The input prematching with the MIM capacitors suppresses insertion loss and improves power gain. Measurements of a single-chain amplifier using the GaN HEMT show a high drain efficiency of 66.3% and a high power gain of 16.2 dB at 3.5 GHz, regardless of plastic packaging. A Doherty amplifier demonstration with the GaN HEMT shows a drain efficiency as high as 51.2% and an output power of 36.0 dBm at ACLR of -50 dBc. This is the first demonstration of a plastic packaged GaN HEMT Doherty amplifier in the 3.5-GHz band.","PeriodicalId":273434,"journal":{"name":"2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130244532","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-09-27DOI: 10.1109/RFIT.2016.7578131
T. Yoshida, Hiroshi Adachi, K. Takano, K. Katayama, S. Amakawa, M. Fujishima
A QAM-capable 300GHz CMOS transmitter operating above/max was recently reported. A key component is a cubic mixer, which is a tripler-based up-conversion mixer. This paper studies the SNR characteristics of cubic mixer theoretically for realizing high-speed communication. The condition of avoiding the interference between the RF signal and spur component is clarified.
{"title":"System-level evaluation of 300GHz CMOS wireless transmitter using cubic mixer","authors":"T. Yoshida, Hiroshi Adachi, K. Takano, K. Katayama, S. Amakawa, M. Fujishima","doi":"10.1109/RFIT.2016.7578131","DOIUrl":"https://doi.org/10.1109/RFIT.2016.7578131","url":null,"abstract":"A QAM-capable 300GHz CMOS transmitter operating above/max was recently reported. A key component is a cubic mixer, which is a tripler-based up-conversion mixer. This paper studies the SNR characteristics of cubic mixer theoretically for realizing high-speed communication. The condition of avoiding the interference between the RF signal and spur component is clarified.","PeriodicalId":273434,"journal":{"name":"2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116033508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this paper, a low-power transformer-based Ku-band receiver front-end is implemented in a 180-nm CMOS technology. The transformer-feedback gain-boosting technique and forward-body-bias technique are employed in three-stage (common gate + 2-stage common source) LNA to achieve a low-power design. A resistive ring mixer is chosen due to its advantage of zero-dc-power. The receiver demonstrates a 4.47-dB conversion gain at IF frequency of 100 MHz while consuming only 7.272 mW.
{"title":"A low-power Ku-band transformer-based receiver using low-cost 180nm CMOS for IoT applications","authors":"Hamed Alsuraisry, Shao-Cheng Hsiao, Yi-Hsien Lin, Yen-Hung Kuo, Jeng‐Han Tsai, Tian-Wei Huang","doi":"10.1109/RFIT.2016.7578188","DOIUrl":"https://doi.org/10.1109/RFIT.2016.7578188","url":null,"abstract":"In this paper, a low-power transformer-based Ku-band receiver front-end is implemented in a 180-nm CMOS technology. The transformer-feedback gain-boosting technique and forward-body-bias technique are employed in three-stage (common gate + 2-stage common source) LNA to achieve a low-power design. A resistive ring mixer is chosen due to its advantage of zero-dc-power. The receiver demonstrates a 4.47-dB conversion gain at IF frequency of 100 MHz while consuming only 7.272 mW.","PeriodicalId":273434,"journal":{"name":"2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123231373","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-09-27DOI: 10.1109/RFIT.2016.7578134
Cuilin Chen, Fenfen Tuo, Xiao Xu, T. Yoshimasu
A 30-GHz band Single-Pole Double-Throw (SPDT) switch IC is designed, fabricated and fully evaluated in 120-nm SiGe heterojunction bipolar transistor (HBT) process. The SPDT switch IC employs diode-connected HBTs and LC resonant circuits to improve the insertion loss and isolation. The fabricated SPDT switch IC has exhibited an insertion loss of 3.3 dB, an isolation of 21.8 dB and an input-referred 1-dB compression point (P1dB) of 16 dBm at 32 GHz.
{"title":"A 30-GHz band low-insertion loss and high-isolation SPDT switch IC in 120-nm SiGe HBT","authors":"Cuilin Chen, Fenfen Tuo, Xiao Xu, T. Yoshimasu","doi":"10.1109/RFIT.2016.7578134","DOIUrl":"https://doi.org/10.1109/RFIT.2016.7578134","url":null,"abstract":"A 30-GHz band Single-Pole Double-Throw (SPDT) switch IC is designed, fabricated and fully evaluated in 120-nm SiGe heterojunction bipolar transistor (HBT) process. The SPDT switch IC employs diode-connected HBTs and LC resonant circuits to improve the insertion loss and isolation. The fabricated SPDT switch IC has exhibited an insertion loss of 3.3 dB, an isolation of 21.8 dB and an input-referred 1-dB compression point (P1dB) of 16 dBm at 32 GHz.","PeriodicalId":273434,"journal":{"name":"2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114852400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-09-27DOI: 10.1109/RFIT.2016.7578148
J. Chiao, D. Sucato, S. Sparagana, Jeffrey Mays, Patricia Rampy
In this work, clinical results of a wireless recording system for intraoperative neurophysiological monitoring during a spine correction surgery are reported. The wireless modules connecting directly to the subdermal needle electrodes transmit the waveforms detected in certain muscle areas to a computer via telemetry for real-time display, analysis and storage. Sufficient gain, bandwidth and digitalization preserve the integrity of the neural signal waveforms throughout the surgery. The feasibility of using wireless communication to quantitatively document the health of patient's neural system during spine manipulation is demonstrated. The waveforms are recorded in real time with high accuracy to assess the risks of injury. This demonstration validates the potentials for wireless signal acquisition in clinical settings and can enable more applications for precise diagnosis with benefits of elimination cluttered wires and electromagnetic interferences.
{"title":"Report of clinical results in intraoperative wireless recording","authors":"J. Chiao, D. Sucato, S. Sparagana, Jeffrey Mays, Patricia Rampy","doi":"10.1109/RFIT.2016.7578148","DOIUrl":"https://doi.org/10.1109/RFIT.2016.7578148","url":null,"abstract":"In this work, clinical results of a wireless recording system for intraoperative neurophysiological monitoring during a spine correction surgery are reported. The wireless modules connecting directly to the subdermal needle electrodes transmit the waveforms detected in certain muscle areas to a computer via telemetry for real-time display, analysis and storage. Sufficient gain, bandwidth and digitalization preserve the integrity of the neural signal waveforms throughout the surgery. The feasibility of using wireless communication to quantitatively document the health of patient's neural system during spine manipulation is demonstrated. The waveforms are recorded in real time with high accuracy to assess the risks of injury. This demonstration validates the potentials for wireless signal acquisition in clinical settings and can enable more applications for precise diagnosis with benefits of elimination cluttered wires and electromagnetic interferences.","PeriodicalId":273434,"journal":{"name":"2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"127 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134312026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-09-27DOI: 10.1109/RFIT.2016.7578172
Jeng‐Han Tsai, Wu-Hsuan Lin, Chuan‐Jung Huang
A up-conversion ring mixer is presented in this paper using 0.18 μm standard CMOS technology. By employing a weak inversion biasing technique, the ring mixer can operate at low dc consumption power and low LO drive power while maintaining reasonable conversion gain. The MMIC exhibits flat measured conversion gain of 2 ± 2 dB from 15 to 34 GHz via 3 dBm of LO drive. At low LO drive power mode of 0 dBm, the mixer has conversion gain of 1.5 ± 2.5 dB from 15 to 34 GHz. Due to the double-balanced ring topology, the mixer demonstrates high LO to RF isolation of 45 dB. The dc power consumption is only 2.749 mW from 1.2 V supply voltage.
{"title":"Design of 15–34 GHz low-power up-conversion ring mixer using 0.18 μm CMOS technology","authors":"Jeng‐Han Tsai, Wu-Hsuan Lin, Chuan‐Jung Huang","doi":"10.1109/RFIT.2016.7578172","DOIUrl":"https://doi.org/10.1109/RFIT.2016.7578172","url":null,"abstract":"A up-conversion ring mixer is presented in this paper using 0.18 μm standard CMOS technology. By employing a weak inversion biasing technique, the ring mixer can operate at low dc consumption power and low LO drive power while maintaining reasonable conversion gain. The MMIC exhibits flat measured conversion gain of 2 ± 2 dB from 15 to 34 GHz via 3 dBm of LO drive. At low LO drive power mode of 0 dBm, the mixer has conversion gain of 1.5 ± 2.5 dB from 15 to 34 GHz. Due to the double-balanced ring topology, the mixer demonstrates high LO to RF isolation of 45 dB. The dc power consumption is only 2.749 mW from 1.2 V supply voltage.","PeriodicalId":273434,"journal":{"name":"2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116951922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-09-27DOI: 10.1109/RFIT.2016.7578179
Chih‐Han Chi, H. Chuang
In this paper, a 60-GHz ultra-low-power single-ended sub-harmonic down-conversion mixer with a merged structure fabricated in 90-nm CMOS is presented. The mixer core is merged directly with self-biased trans-impedance amplifier (TIA) to omit its traditional load stage and to enhance the conversion gain. By using weak-inversion bias technique in a source-driven topology, the mixer core only needs quiescent μA which can be stolen from TIA via the feedback resistors. The sub-harmonic mixers can work effectively for millimeter wave system by employing LO frequency that is only half of fundamental mixer. When operating with the optimal LO power of -3.5 dBm at 30 GHz, power consumption is 1mW. The measurement results of the mixer show 5.9 dB conversion gain, -60 dBm 2LO-to-RF leakage at 60 GHz. The calculated figure of merits (FOM) with the consideration of conversion gain and power consumption is the best among the reported mixers operating at V-band frequency in CMOS process.
{"title":"A 60-GHz CMOS ultra-low-power single-ended sub-harmonic mixer in 90-nm CMOS","authors":"Chih‐Han Chi, H. Chuang","doi":"10.1109/RFIT.2016.7578179","DOIUrl":"https://doi.org/10.1109/RFIT.2016.7578179","url":null,"abstract":"In this paper, a 60-GHz ultra-low-power single-ended sub-harmonic down-conversion mixer with a merged structure fabricated in 90-nm CMOS is presented. The mixer core is merged directly with self-biased trans-impedance amplifier (TIA) to omit its traditional load stage and to enhance the conversion gain. By using weak-inversion bias technique in a source-driven topology, the mixer core only needs quiescent μA which can be stolen from TIA via the feedback resistors. The sub-harmonic mixers can work effectively for millimeter wave system by employing LO frequency that is only half of fundamental mixer. When operating with the optimal LO power of -3.5 dBm at 30 GHz, power consumption is 1mW. The measurement results of the mixer show 5.9 dB conversion gain, -60 dBm 2LO-to-RF leakage at 60 GHz. The calculated figure of merits (FOM) with the consideration of conversion gain and power consumption is the best among the reported mixers operating at V-band frequency in CMOS process.","PeriodicalId":273434,"journal":{"name":"2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121597060","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-09-27DOI: 10.1109/RFIT.2016.7578122
Cuilin Chen, Xin Yang, T. Yoshimasu
A 30-GHz band power amplifier (PA) IC is designed, fabricated and fully tested in 120-nm SiGe HBT process. The impedances of the output matching network are optimized at both the fundamental and second harmonic for a high power added efficiency (PAE). At a supply voltage of 1.4 V, the PA IC has exhibited a measured output P1dB of 10.8 dBm, a peak PAE of 32.4%, and a small-signal gain of 9.1 dB at 30 GHz.
{"title":"A 30-GHz band high-efficiency Class-J power amplifier IC in 120-nm SiGe HBT technology","authors":"Cuilin Chen, Xin Yang, T. Yoshimasu","doi":"10.1109/RFIT.2016.7578122","DOIUrl":"https://doi.org/10.1109/RFIT.2016.7578122","url":null,"abstract":"A 30-GHz band power amplifier (PA) IC is designed, fabricated and fully tested in 120-nm SiGe HBT process. The impedances of the output matching network are optimized at both the fundamental and second harmonic for a high power added efficiency (PAE). At a supply voltage of 1.4 V, the PA IC has exhibited a measured output P1dB of 10.8 dBm, a peak PAE of 32.4%, and a small-signal gain of 9.1 dB at 30 GHz.","PeriodicalId":273434,"journal":{"name":"2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"313 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122984729","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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