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Index of improvement of nonlinear single-channel signal detection systems under Gaussian noise 高斯噪声下非线性单通道信号检测系统的改进指标
Pub Date : 2023-01-01 DOI: 10.15222/tkea2023.1-2.09
I. V. Tsevukh, A. A. Sakovich, V. I. Tsevukh
Detection of signals of moving targets against the background of an additive mixture of uncorrelated and correlated interference is one of the relevant and rather complex tasks solved in coherent-pulse radar systems. Correlated interference in the form of disturbing reflections from stationary or slowly moving objects significantly disrupts the regular operation of radar systems, which can lead to missing the target. The article presents a comparative analysis of the potential efficiency of two non-linear single-channel systems for useful signal detection operating under an additive mixture of uncorrelated and correlated Gaussian noise. To solve the task of analyzing the quality of detectors from the class of nonlinear structures, an improvement index was proposed, which is the signal/interference ratio at the output of the nonlinear system to the signal/interference ratio at its input, averaged over all possible radial velocities of the target. Numerical results of a comparative analysis of the potential effectiveness of the considered algorithms for various spectral-correlation parameters of interference are given. It was established that the potential efficiency of the algorithm developed by the author is higher than the efficiency of the algorithm implementing the well-known Hotelling statistics based on the improvement index and the parameters of the additive mixture of uncorrelated and correlated interference selected in this work.
在相干脉冲雷达系统中,不相关和相关干扰叠加混合背景下的运动目标信号检测是相关且相当复杂的问题之一。来自静止或缓慢移动物体的干扰反射形式的相关干扰严重破坏了雷达系统的正常运行,这可能导致错过目标。本文比较分析了两种非线性单通道系统在不相关和相关高斯噪声的加性混合下检测有用信号的潜在效率。为了解决从非线性结构的角度分析探测器质量的问题,提出了一种改进指标,即非线性系统的输出信号/干扰比与输入信号/干扰比,对目标的所有可能径向速度取平均值。文中给出了对各种频谱相关干扰参数的算法潜在有效性的数值对比分析结果。结果表明,本文提出的算法的潜在效率高于基于改进指标和本文选择的不相关和相关干涉的加性混合参数实现著名的Hotelling统计的算法的效率。
{"title":"Index of improvement of nonlinear single-channel signal detection systems under Gaussian noise","authors":"I. V. Tsevukh, A. A. Sakovich, V. I. Tsevukh","doi":"10.15222/tkea2023.1-2.09","DOIUrl":"https://doi.org/10.15222/tkea2023.1-2.09","url":null,"abstract":"Detection of signals of moving targets against the background of an additive mixture of uncorrelated and correlated interference is one of the relevant and rather complex tasks solved in coherent-pulse radar systems. Correlated interference in the form of disturbing reflections from stationary or slowly moving objects significantly disrupts the regular operation of radar systems, which can lead to missing the target. The article presents a comparative analysis of the potential efficiency of two non-linear single-channel systems for useful signal detection operating under an additive mixture of uncorrelated and correlated Gaussian noise. To solve the task of analyzing the quality of detectors from the class of nonlinear structures, an improvement index was proposed, which is the signal/interference ratio at the output of the nonlinear system to the signal/interference ratio at its input, averaged over all possible radial velocities of the target. Numerical results of a comparative analysis of the potential effectiveness of the considered algorithms for various spectral-correlation parameters of interference are given. It was established that the potential efficiency of the algorithm developed by the author is higher than the efficiency of the algorithm implementing the well-known Hotelling statistics based on the improvement index and the parameters of the additive mixture of uncorrelated and correlated interference selected in this work.","PeriodicalId":30281,"journal":{"name":"Tekhnologiya i Konstruirovanie v Elektronnoi Apparature","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135794736","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Device for measuring signals of conveyor weights when loading a vessel with bulk cargo 在装载散装货物时测量传送带重量信号的装置
Pub Date : 2023-01-01 DOI: 10.15222/tkea2023.1-2.50
None Zavadsky V. A., None Kharchenko R. Yu., None Dranchuk S. M., None Tsatsko V. I., None Haur T. O.
In the maritime industry, it is common to load a vessel with bulk materials using conveyor scales. To determine the amount of cargo loaded into the hold of the vessel, it is necessary to simultaneously measure both the current weight on the weighing platform and the speed of the conveyor belt. In addition, the loading process is affected by both the heterogeneity of the bulk material and the uneven movement of the conveyor belt. Therefore, it is necessary to simultaneously and synchronously measure these parameters. The purpose of this work was to develop a device and an algorithm for its operation, which will improve the accuracy of determining the mass of cargo when loading a vessel. Such a converter is located near the measuring sensor, and the frequency signal, the frequency of which is directly proportional to the output signal of the sensor along the line, is transmitted over a considerable distance without loss of information to the measuring device. The developed device for measuring the mass of bulk material using conveyor scales and the algorithm of its operation make it possible to simultaneously and continuously measure the current mass of the cargo and the speed of the conveyor belt, and, accordingly, the current mass of the cargo. The measurement accuracy was 0.25...0.5%. This device also allows you to get the characteristics of the weighing process to improve the mechanical conveyor designs of the scales. Testing of the developed device was carried out on conveyor scales when loading the ship with mineral fertilizers. Testing showed that the developed device for obtaining tensometric information and the algorithm of its operation make it possible to control the process of loading a ship with bulk materials using conveyor scales with the planned accuracy, which, in turn, allows it to be used in computer systems for monitoring ship loading. The developed device and the algorithm of its operation can improve the quality of measuring the mass of cargo and increase the accuracy of measurement, which is important from an economic point of view.
在海运业中,使用传送带秤装载散装物料是很常见的。为了确定装载到货舱的货物数量,有必要同时测量称重平台上的当前重量和传送带的速度。此外,装载过程受散料的非均匀性和输送带的不均匀运动的影响。因此,有必要对这些参数进行同步测量。这项工作的目的是开发一种设备及其操作算法,以提高装货时确定货物质量的准确性。这种转换器位于测量传感器附近,其频率与传感器沿线路的输出信号成正比,在相当远的距离上传输,而不会丢失测量装置的信息。所研制的输送带秤散装物料质量测量装置及其运行算法,可以同时连续测量货物的当前质量和输送带的速度,从而测量货物的当前质量。测量精度为0.25 ~ 0.5%。该装置还可以得到称重过程的特点,以改进机械输送秤的设计。在装载矿物肥料时,在输送秤上对所开发的装置进行了测试。试验表明,所研制的张力测量信息获取装置及其操作算法,使利用传送带秤对船舶散装物料装载过程的控制达到预定精度,从而可用于船舶装载监测的计算机系统。所研制的装置及其运行算法可以提高货物质量计量的质量,提高计量的精度,具有重要的经济意义。
{"title":"Device for measuring signals of conveyor weights when loading a vessel with bulk cargo","authors":"None Zavadsky V. A., None Kharchenko R. Yu., None Dranchuk S. M., None Tsatsko V. I., None Haur T. O.","doi":"10.15222/tkea2023.1-2.50","DOIUrl":"https://doi.org/10.15222/tkea2023.1-2.50","url":null,"abstract":"In the maritime industry, it is common to load a vessel with bulk materials using conveyor scales. To determine the amount of cargo loaded into the hold of the vessel, it is necessary to simultaneously measure both the current weight on the weighing platform and the speed of the conveyor belt. In addition, the loading process is affected by both the heterogeneity of the bulk material and the uneven movement of the conveyor belt. Therefore, it is necessary to simultaneously and synchronously measure these parameters. The purpose of this work was to develop a device and an algorithm for its operation, which will improve the accuracy of determining the mass of cargo when loading a vessel. Such a converter is located near the measuring sensor, and the frequency signal, the frequency of which is directly proportional to the output signal of the sensor along the line, is transmitted over a considerable distance without loss of information to the measuring device. The developed device for measuring the mass of bulk material using conveyor scales and the algorithm of its operation make it possible to simultaneously and continuously measure the current mass of the cargo and the speed of the conveyor belt, and, accordingly, the current mass of the cargo. The measurement accuracy was 0.25...0.5%. This device also allows you to get the characteristics of the weighing process to improve the mechanical conveyor designs of the scales. Testing of the developed device was carried out on conveyor scales when loading the ship with mineral fertilizers. Testing showed that the developed device for obtaining tensometric information and the algorithm of its operation make it possible to control the process of loading a ship with bulk materials using conveyor scales with the planned accuracy, which, in turn, allows it to be used in computer systems for monitoring ship loading. The developed device and the algorithm of its operation can improve the quality of measuring the mass of cargo and increase the accuracy of measurement, which is important from an economic point of view.","PeriodicalId":30281,"journal":{"name":"Tekhnologiya i Konstruirovanie v Elektronnoi Apparature","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135839025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hybrid battery-supercapacitor energy storage system for micromobile electric vehicles 微型电动汽车用混合电池-超级电容器储能系统
Pub Date : 2023-01-01 DOI: 10.15222/tkea2023.1-2.14
The study proves the importance of hybridising the power supply system of micromobile electric vehicles, taking into account the strict limitations on the final size and weight of the storage device, using the example of an electric bicycle. The authors offer a brief overview of the main hybridization topologies and analyze the advantages and disadvantages of each of them. The paper describes the possibilities of using supercapacitors as an additional source of energy for a hybrid system and proposes a way to deal with the disadvantages of using standard batteries by combining them with an additional energy source. A mathematical basis is given to such a solution being able to unload the main power source by drawing excessive current at peak consumption times, thereby providing a wider range of operating voltages compared to using only a standard power source. To ensure optimal weight and size parameters of the drive, an active system with a controlled auxiliary power source is chosen. In this topology, the second converter is installed between the additional energy source, the supercapacitor storage device, and the battery. It is proposed to implement the schematic of this converter using a Chuck converter with an automated control system containing a feedback loop and based on a microcontroller, which ensures a relatively quick change of the control algorithm depending on the configuration and requirements for the system. The paper also presents the algorithm of the storage system operation for possible modes of electric bicycle operation. The transfer characteristic is calculated using the averaged state method. To confirm the operability of the auxiliary power source, a converter circuit is developed and simulation modelling is carried out in MATLAB Simulink. The system simulation allowed assessing the nature of the transient processes of the open-loop system and the accuracy of the transfer characteristic calculation.
本研究以电动自行车为例,考虑到存储装置的最终尺寸和重量的严格限制,证明了混合动力供电系统对微型电动汽车的重要性。作者简要概述了主要的杂交拓扑结构,并分析了每种杂交拓扑结构的优缺点。本文描述了使用超级电容器作为混合系统额外能源的可能性,并提出了一种方法,通过将标准电池与额外能源相结合来解决使用标准电池的缺点。给出了这样的解决方案的数学基础,该解决方案能够通过在峰值消耗时间提取过量电流来卸载主电源,从而提供与仅使用标准电源相比更宽的工作电压范围。为了保证驱动器的最优重量和尺寸参数,选择了带有可控辅助电源的主动系统。在这种拓扑结构中,第二个转换器安装在附加能源、超级电容器存储设备和电池之间。本文提出了一种基于微控制器的卡盘变换器的实现原理图,该变换器具有一个包含反馈回路的自动控制系统,可以根据系统的配置和要求相对快速地改变控制算法。针对电动自行车可能的运行方式,提出了存储系统的运行算法。利用平均状态法计算了传输特性。为了验证辅助电源的可操作性,开发了一种转换电路,并在MATLAB Simulink中进行了仿真建模。系统仿真可以评估开环系统瞬态过程的性质和传递特性计算的准确性。
{"title":"Hybrid battery-supercapacitor energy storage system for micromobile electric vehicles","authors":"","doi":"10.15222/tkea2023.1-2.14","DOIUrl":"https://doi.org/10.15222/tkea2023.1-2.14","url":null,"abstract":"The study proves the importance of hybridising the power supply system of micromobile electric vehicles, taking into account the strict limitations on the final size and weight of the storage device, using the example of an electric bicycle. The authors offer a brief overview of the main hybridization topologies and analyze the advantages and disadvantages of each of them. The paper describes the possibilities of using supercapacitors as an additional source of energy for a hybrid system and proposes a way to deal with the disadvantages of using standard batteries by combining them with an additional energy source. A mathematical basis is given to such a solution being able to unload the main power source by drawing excessive current at peak consumption times, thereby providing a wider range of operating voltages compared to using only a standard power source. To ensure optimal weight and size parameters of the drive, an active system with a controlled auxiliary power source is chosen. In this topology, the second converter is installed between the additional energy source, the supercapacitor storage device, and the battery. It is proposed to implement the schematic of this converter using a Chuck converter with an automated control system containing a feedback loop and based on a microcontroller, which ensures a relatively quick change of the control algorithm depending on the configuration and requirements for the system. The paper also presents the algorithm of the storage system operation for possible modes of electric bicycle operation. The transfer characteristic is calculated using the averaged state method. To confirm the operability of the auxiliary power source, a converter circuit is developed and simulation modelling is carried out in MATLAB Simulink. The system simulation allowed assessing the nature of the transient processes of the open-loop system and the accuracy of the transfer characteristic calculation.","PeriodicalId":30281,"journal":{"name":"Tekhnologiya i Konstruirovanie v Elektronnoi Apparature","volume":"159 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135839275","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
I-V-characteristics of Schottky diodes based on graphene/n-Si heterostructures 基于石墨烯/n-Si异质结构的肖特基二极管的i - v特性
Pub Date : 2023-01-01 DOI: 10.15222/tkea2023.1-2.03
I. P. Koziarskyi, M. I. Ilashchuk, I. G. Orletskyi, D. P. Koziarskyi, L. A. Myroniuk, D. V. Myroniuk, A. I. Ievtushenko, I. M. Danylenko, E. V. Maistruk
The authors investigated the electrical properties of graphene/n-Si Schottky diode heterostructures obtained by mechanical exfoliation of graphite to thin-layer graphene in an aqueous solution of polyvinylpyrrolidone as a result of the dynamics of the dispersed graphite mixture under the action of a mechanical blender. The graphene/n-Si structures differed in terms of duration of applying graphene films on n-Si substrates: 5, 10 and 15 min. The temperature of the substrates did not exceed 250°C. The formation of graphene layers was confirmed by the study of Raman scattering spectra in the frequency range of 1000—3250 cm–1, which show G and 2D bands with the features characteristic of low-layer graphene. The dependence of the electrical properties of the investigated surface-barrier graphene/n-Si structures on the duration of sputtering of graphene films was established. It was found that the value of the contact potential difference φk was 1.35, 1.32 and 1.27 V and the series resistance at room temperature was 3.4•106, 3.4•103 and 3.7•103 Ω for structures with the duration of graphene layer deposition 5, 10 and 15 min, respectively. The formation of both forward and reverse currents was dominated by the tunneling of charge carriers through the potential barrier.
作者研究了分散的石墨混合物在机械搅拌机的作用下,在聚乙烯吡咯烷酮水溶液中,石墨机械剥落成薄层石墨烯,从而获得石墨烯/n-Si肖特基二极管异质结构的电学性质。石墨烯/n-Si结构在n-Si衬底上应用石墨烯薄膜的时间不同:5,10和15分钟。衬底的温度不超过250°C。在1000 ~ 3250 cm-1频率范围内的拉曼散射光谱研究证实了石墨烯层的形成,显示出具有低层石墨烯特征的G和2D波段。研究了表面势垒石墨烯/n-Si结构的电学性能与石墨烯薄膜溅射时间的关系。结果表明,当石墨烯层沉积时间为5、10和15 min时,结构的接触电位差φk分别为1.35、1.32和1.27 V,室温下串联电阻分别为3.4•106、3.4•103和3.7•103 Ω。正反电流的形成主要是电荷载流子通过势垒的隧穿。
{"title":"I-V-characteristics of Schottky diodes based on graphene/n-Si heterostructures","authors":"I. P. Koziarskyi, M. I. Ilashchuk, I. G. Orletskyi, D. P. Koziarskyi, L. A. Myroniuk, D. V. Myroniuk, A. I. Ievtushenko, I. M. Danylenko, E. V. Maistruk","doi":"10.15222/tkea2023.1-2.03","DOIUrl":"https://doi.org/10.15222/tkea2023.1-2.03","url":null,"abstract":"The authors investigated the electrical properties of graphene/n-Si Schottky diode heterostructures obtained by mechanical exfoliation of graphite to thin-layer graphene in an aqueous solution of polyvinylpyrrolidone as a result of the dynamics of the dispersed graphite mixture under the action of a mechanical blender. The graphene/n-Si structures differed in terms of duration of applying graphene films on n-Si substrates: 5, 10 and 15 min. The temperature of the substrates did not exceed 250°C. The formation of graphene layers was confirmed by the study of Raman scattering spectra in the frequency range of 1000—3250 cm–1, which show G and 2D bands with the features characteristic of low-layer graphene. The dependence of the electrical properties of the investigated surface-barrier graphene/n-Si structures on the duration of sputtering of graphene films was established. It was found that the value of the contact potential difference φk was 1.35, 1.32 and 1.27 V and the series resistance at room temperature was 3.4•106, 3.4•103 and 3.7•103 Ω for structures with the duration of graphene layer deposition 5, 10 and 15 min, respectively. The formation of both forward and reverse currents was dominated by the tunneling of charge carriers through the potential barrier.","PeriodicalId":30281,"journal":{"name":"Tekhnologiya i Konstruirovanie v Elektronnoi Apparature","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135801262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Improvement of inverse characteristics of silicon varicap by using low-temperature gettering 用低温吸湿法改善硅varicap的反特性
Pub Date : 2023-01-01 DOI: 10.15222/tkea2023.1-2.43
V. N. Litvinenko, S. V. Shutov
Varicaps are widely used in radio electronics as a variable capacitance, the value of which is controlled by voltage. However, it should be noted that the cost of varicaps remains relatively high due to a low yield of suitable devices. This is caused by high levels of reverse currents and low breakdown voltages of varicaps, which is determined by the significant dependence of the reverse characteristics of varicaps on the density of structural defects and heavy metal impurities in their active regions. This study aimed to discover the causes and mechanisms of degradation of the reverse characteristics of varicaps with an ohmic contact based on nickel during annealing of a nickel film during the formation of an ohmic contact. Another goal was to determine the possibility of using gettering operations to prevent degradation of the reverse characteristics of varicaps and increase the yield of suitable devices. The conducted experimental studies have shown that the reason for the degradation of the reverse characteristics of varicaps during the formation of a nickel-based ohmic contact is that, during the annealing of the nickel film, the excess nickel atoms not involved in the formation of NiSi silicide penetrate into the region of the space charge of the p-n junction. The authors consider in detail the proposed technology for manufacturing nickel-based varicap structures with an ohmic contact using gettering of excess nickel atoms by carrying out additional low-temperature annealing of varicap structures using a ready-made “intrinsic geter” — the Si-NiSi interface. It is shown that the developed technology for fabricating varicap structures using gettering makes it possible to clean the active regions of varicaps from nickel atoms, which ensures a significant decrease in the level of varicap reverse currents and an increase in the yield of suitable devices.
可变电容作为一种可变电容广泛应用于无线电电子学中,其值由电压控制。然而,应该指出的是,由于合适设备的产量低,varicaps的成本仍然相对较高。这是由高水平的反向电流和低击穿电压引起的,这是由varicaps的反向特性对其活性区域的结构缺陷和重金属杂质的密度的显著依赖所决定的。本研究旨在发现在欧姆接触形成过程中镍膜退火过程中,镍基欧姆接触变压的反向特性退化的原因和机制。另一个目标是确定使用捕集操作的可能性,以防止varicaps反向特性的退化,并增加合适设备的产量。所进行的实验研究表明,在镍基欧姆接触形成过程中,varicaps的反向特性退化的原因是,在镍膜退火过程中,未参与NiSi硅化物形成的多余镍原子渗透到p-n结的空间电荷区域。作者详细考虑了提出的制造镍基瓦里卡结构的技术,该技术采用欧姆接触,通过使用现成的“本征体”- Si-NiSi界面对瓦里卡结构进行额外的低温退火,以吸收多余的镍原子。研究表明,利用吸波技术制备varicap结构,可以从镍原子中清除varicap的活性区域,从而保证了varicap反向电流水平的显著降低和合适器件的产率的提高。
{"title":"Improvement of inverse characteristics of silicon varicap by using low-temperature gettering","authors":"V. N. Litvinenko, S. V. Shutov","doi":"10.15222/tkea2023.1-2.43","DOIUrl":"https://doi.org/10.15222/tkea2023.1-2.43","url":null,"abstract":"Varicaps are widely used in radio electronics as a variable capacitance, the value of which is controlled by voltage. However, it should be noted that the cost of varicaps remains relatively high due to a low yield of suitable devices. This is caused by high levels of reverse currents and low breakdown voltages of varicaps, which is determined by the significant dependence of the reverse characteristics of varicaps on the density of structural defects and heavy metal impurities in their active regions. This study aimed to discover the causes and mechanisms of degradation of the reverse characteristics of varicaps with an ohmic contact based on nickel during annealing of a nickel film during the formation of an ohmic contact. Another goal was to determine the possibility of using gettering operations to prevent degradation of the reverse characteristics of varicaps and increase the yield of suitable devices. The conducted experimental studies have shown that the reason for the degradation of the reverse characteristics of varicaps during the formation of a nickel-based ohmic contact is that, during the annealing of the nickel film, the excess nickel atoms not involved in the formation of NiSi silicide penetrate into the region of the space charge of the p-n junction. The authors consider in detail the proposed technology for manufacturing nickel-based varicap structures with an ohmic contact using gettering of excess nickel atoms by carrying out additional low-temperature annealing of varicap structures using a ready-made “intrinsic geter” — the Si-NiSi interface. It is shown that the developed technology for fabricating varicap structures using gettering makes it possible to clean the active regions of varicaps from nickel atoms, which ensures a significant decrease in the level of varicap reverse currents and an increase in the yield of suitable devices.","PeriodicalId":30281,"journal":{"name":"Tekhnologiya i Konstruirovanie v Elektronnoi Apparature","volume":"115 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135839262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Aspects of using of sheet thermomigration of the Al+Si three-dimensional liquid zone to form semiconductor power devices 利用Al+Si三维液态区片热法形成半导体功率器件的几个方面
Pub Date : 2023-01-01 DOI: 10.15222/tkea2023.1-2.34
O. S. Polukhin, V. V. Kravchina
The paper considers using the technology of sheet thermomigration of three-dimensional zones, which implements p+-Si* liquid epitaxy on an n-Si wafer, to produce power semiconductor devices with crystals having thinned layers of high-resistive n-Si base, which are surrounded by p+-Si* side insulation regions, and thickened p+-Si* emitter layers. This technology, which has a number of advantages, was used to create diode arrays in n-Si with a specific resistance of 20 Ω•cm. For recrystallization, p+-Si wafers with a resistivity of 0.005 Ω•cm were used. The produced direct polarity diodes had a breakdown voltage of 1000 V, a forward voltage drop of 1.17 V at a current density of 2.0 A/mm2, and a reverse resistance recovery time of trr = 1.5 µs. Additional use of the technology of creation of recombination centers allowed to further improve trr to 0.5 μs.
本文考虑利用三维区片热化技术,在n-Si晶片上实现p+-Si*液体外延,生产具有高阻n-Si基片薄层和p+-Si*侧绝缘层以及p+-Si*发射极层的功率半导体器件。该技术具有许多优点,用于在n-Si中创建二极管阵列,其比电阻为20 Ω•cm。再结晶采用电阻率为0.005 Ω•cm的p+-Si晶片。该二极管在电流密度为2.0 a /mm2时击穿电压为1000 V,正向压降为1.17 V,反向电阻恢复时间为trr = 1.5µs。另外,利用重组中心的创建技术,可以进一步将trr提高到0.5 μs。
{"title":"Aspects of using of sheet thermomigration of the Al+Si three-dimensional liquid zone to form semiconductor power devices","authors":"O. S. Polukhin, V. V. Kravchina","doi":"10.15222/tkea2023.1-2.34","DOIUrl":"https://doi.org/10.15222/tkea2023.1-2.34","url":null,"abstract":"The paper considers using the technology of sheet thermomigration of three-dimensional zones, which implements p+-Si* liquid epitaxy on an n-Si wafer, to produce power semiconductor devices with crystals having thinned layers of high-resistive n-Si base, which are surrounded by p+-Si* side insulation regions, and thickened p+-Si* emitter layers. This technology, which has a number of advantages, was used to create diode arrays in n-Si with a specific resistance of 20 Ω•cm. For recrystallization, p+-Si wafers with a resistivity of 0.005 Ω•cm were used. The produced direct polarity diodes had a breakdown voltage of 1000 V, a forward voltage drop of 1.17 V at a current density of 2.0 A/mm2, and a reverse resistance recovery time of trr = 1.5 µs. Additional use of the technology of creation of recombination centers allowed to further improve trr to 0.5 μs.","PeriodicalId":30281,"journal":{"name":"Tekhnologiya i Konstruirovanie v Elektronnoi Apparature","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135839009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Impact of changing the shape of gravity heat pipe with threaded evaporator on its heat transfer characteristics 改变带螺纹蒸发器的重力热管形状对其传热特性的影响
Pub Date : 2023-01-01 DOI: 10.15222/tkea2023.1-2.27
L. V. Lipnitskyi, R. S. Melnyk, Yu. E. Nikolaenko, V. Yu. Kravets, D. V. Pekur
The modern development of electronics is associated with the problem of reducing the mass and size of the equipment while increasing its power. This leads to an increase in the temperature of both individual elements and the device as a whole, which contributes to a decrease in equipment reliability. This makes the development of inexpensive yet efficient cooling systems an urgent task. One of the ways to solve this problem is to use heat pipes of a new simplified design in cooling systems. This article compares the thermal characteristics of a cylindrical copper gravity heat pipe with a threaded evaporator before and after flattening. The working fluid used in the experiment was R141b. Experimental studies were conducted at two tilt angles relative to the horizontal under the conditions of forced convection cooling of the condensation zone. The influence of the change in the shape of the body from cylindrical to flat on the temperature in the heating zone of the heat pipe, thermal resistance, and heat transfer coefficients in the evaporation and condensation zones was shown in the range of heat power from 5 to 70 W. The choice of the heat pipe is justified based on the maximum thermal loads of electronic components and the orientation of the cooling system in space. Changing the shape of heat pipe from cylindrical to flat leads to a decrease in the maximum thermal power transmitted, but a flat heat pipe shape is more technologically feasible for use in cooling systems of electronic equipment.
电子学的现代发展与减小设备的质量和尺寸同时增加其功率的问题有关。这会导致单个元件和整个设备的温度升高,从而降低设备的可靠性。这使得开发廉价而高效的冷却系统成为一项紧迫的任务。解决这一问题的方法之一是在冷却系统中使用一种新的简化设计的热管。本文比较了带螺纹蒸发器的圆柱形铜重力热管在压平前后的热特性。实验所用工质为R141b。在冷凝区强制对流冷却条件下,在相对于水平的两个倾斜角度进行了实验研究。在5 ~ 70 W的热功率范围内,给出了体形由圆柱形变为扁平对热管受热区温度、热阻、蒸发和冷凝区换热系数的影响。热管的选择是根据电子元件的最大热负荷和冷却系统在空间中的方向来确定的。将热管的形状从圆柱形改为扁平会导致最大热功率传输的减少,但扁平的热管形状在技术上更适合用于电子设备的冷却系统。
{"title":"Impact of changing the shape of gravity heat pipe with threaded evaporator on its heat transfer characteristics","authors":"L. V. Lipnitskyi, R. S. Melnyk, Yu. E. Nikolaenko, V. Yu. Kravets, D. V. Pekur","doi":"10.15222/tkea2023.1-2.27","DOIUrl":"https://doi.org/10.15222/tkea2023.1-2.27","url":null,"abstract":"The modern development of electronics is associated with the problem of reducing the mass and size of the equipment while increasing its power. This leads to an increase in the temperature of both individual elements and the device as a whole, which contributes to a decrease in equipment reliability. This makes the development of inexpensive yet efficient cooling systems an urgent task. One of the ways to solve this problem is to use heat pipes of a new simplified design in cooling systems. This article compares the thermal characteristics of a cylindrical copper gravity heat pipe with a threaded evaporator before and after flattening. The working fluid used in the experiment was R141b. Experimental studies were conducted at two tilt angles relative to the horizontal under the conditions of forced convection cooling of the condensation zone. The influence of the change in the shape of the body from cylindrical to flat on the temperature in the heating zone of the heat pipe, thermal resistance, and heat transfer coefficients in the evaporation and condensation zones was shown in the range of heat power from 5 to 70 W. The choice of the heat pipe is justified based on the maximum thermal loads of electronic components and the orientation of the cooling system in space. Changing the shape of heat pipe from cylindrical to flat leads to a decrease in the maximum thermal power transmitted, but a flat heat pipe shape is more technologically feasible for use in cooling systems of electronic equipment.","PeriodicalId":30281,"journal":{"name":"Tekhnologiya i Konstruirovanie v Elektronnoi Apparature","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135839007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of microstrip microwave phase shifters for antenna arrays 天线阵列用微带微波移相器的设计
Pub Date : 2017-06-01 DOI: 10.15222/TKEA2017.3.12
Э. Н. Глушеченко, E. Glushechenko
{"title":"Design of microstrip microwave phase shifters for antenna arrays","authors":"Э. Н. Глушеченко, E. Glushechenko","doi":"10.15222/TKEA2017.3.12","DOIUrl":"https://doi.org/10.15222/TKEA2017.3.12","url":null,"abstract":"","PeriodicalId":30281,"journal":{"name":"Tekhnologiya i Konstruirovanie v Elektronnoi Apparature","volume":"1 1","pages":"12-18"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49130306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Detection of outliers in processing of small size data 小数据处理中异常值的检测
Pub Date : 2016-10-01 DOI: 10.15222/TKEA2016.4-5.42
В. С. Попукайло, V. Popukaylo
{"title":"Detection of outliers in processing of small size data","authors":"В. С. Попукайло, V. Popukaylo","doi":"10.15222/TKEA2016.4-5.42","DOIUrl":"https://doi.org/10.15222/TKEA2016.4-5.42","url":null,"abstract":"","PeriodicalId":30281,"journal":{"name":"Tekhnologiya i Konstruirovanie v Elektronnoi Apparature","volume":"1 1","pages":"42-46"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"67331988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Intensification of heat transfer in liquid heat exchangers with dimple-pin finning 带窝针翅片的液体换热器传热强化研究
Pub Date : 2016-02-01 DOI: 10.15222/TKEA2016.1.23
V. Trofimov, A. Pavlov, Василий Трофимов, А. Л. Павлов
{"title":"Intensification of heat transfer in liquid heat exchangers with dimple-pin finning","authors":"V. Trofimov, A. Pavlov, Василий Трофимов, А. Л. Павлов","doi":"10.15222/TKEA2016.1.23","DOIUrl":"https://doi.org/10.15222/TKEA2016.1.23","url":null,"abstract":"","PeriodicalId":30281,"journal":{"name":"Tekhnologiya i Konstruirovanie v Elektronnoi Apparature","volume":"1 1","pages":"23-26"},"PeriodicalIF":0.0,"publicationDate":"2016-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"67331980","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
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